新紫外激光染料的激光与光谱特性

研究了新合成的一系列噁二唑衍生物及1,4-′-氟-1′-苯乙炔)苯的紫外吸收光谱、荧光光谱、量子效率、荧光寿命、激光能量转换效率和激光调谐范围,并讨论了化合物结构对光谱和激光特性的影响。     

苯并噁嗪的无溶剂法合成及表征

采用无溶剂二步法制得了双酚A型苯并噁嗪，用红外光谱和核磁氢谱对它进行了表征，并将它的初级产品和溶剂法制得的苯并噁嗪的初级产品的成环率进行了比较。     

含螺噁嗪的SiO2变色凝胶实时全息记录光栅

通过本体溶胶-凝胶方法制备了含6′-哌啶-1,3,3-三甲基螺[吲哚-2,3-′[3H]萘-[2,1-b][1,4]噁嗪]的光活性SiO2凝胶。光栅生长曲线显示该光活性凝胶具有快速光响应。在紫外光的预激发下用He-Ne激光器写入光栅时衍射效率的变化规律显示螺噁嗪的光致变色有光致构造异构和光致顺反异构两个竞争过程。通过紫外激发光源的开启和闭合对实时全息光栅的衍射信号进行了调制。     

5,15-二芳基卟吩衍生物的合成及光动力活性研究

光敏剂在光动力治疗(PDT)中发挥着重要作用。设计合成了一系列二芳基卟吩衍生物M1、M2和M3,采用1H NMR、13C NMR和MS进行了结构表征,测定了三个化合物的光物理化学性能,并且对其光动力抗人食管癌Eca-109细胞的作用效果进行了评估。结果显示:这些化合物的最长紫外-可见吸收波长在635 nm左右,最佳发射波长位于630 nm～637 nm; M1、M2和M3单线态氧生成速率均高于对照药血卟啉单甲醚(HMME); MTT实验结果表明化合物M1和M3均对Eca-109肿瘤细胞具有显著的光动力抑制活性,且两者相比,M1暗毒性更低,光毒性更高;细胞凋亡检测结果显示M1-PDT组坏死率和凋亡率分别为29.18%和9.46%,可见M1具备光毒作用。综上所述,化合物M1可作为治疗食道癌的潜在光敏新药进行深入研究。     

苯并噁嗪树脂在无卤低介电覆铜板中的应用

利用DSC测试仪、GT测试仪和从阻抗材料分析仪，从反应性、热学性和介电性能方面对覆铜板行业常见的3种苯并噁嗪树脂展开实验研究。结果表明：二氨基二苯甲烷苯并噁嗪（MDA-BOZ）的自聚反应起始温度为167.15℃，其反应活性最高；双酚A型苯并噁嗪树脂（BPA-BOZ）的反应活性最低且在固化物玻璃化转变温度和介电损耗方面的表现不如二胺型苯并噁嗪，并从分子结构层面分析了性能差异。在无卤低介电覆铜板配方中对3种苯并噁嗪树脂进行应用考察，评估了3种苯并噁嗪树脂在板材的剥离强度、热学性、热膨胀性和介电性能方面的表现。结果表明：在10%的添加量下，3种苯并噁嗪树脂可明显降低配方的介电损耗并提高玻璃化转变温度，BPA-BOZ体系的玻璃化转变温度仅为172.53℃，介电损耗为0.008 2，综合表现最差。该研究可为无卤低介电覆铜板开发提供参考。     

苯并噁嗪型树脂混合物结晶问题的改善

苯并噁嗪型树脂混合物在低温下存在结晶情况,因此在用其生产半固化片时会导致鱼眼缺陷。从实际生产出发,对苯并噁嗪型树脂混合物的结晶问题进行了分析和改善研究,并取得了具体的解决办法。     

苯并噁唑类液晶的合成

自主设计了苯并噁唑类液晶的合成路线.采用对烷基苯酚为起始原料,合成制得对烷基邻硝基苯酚,还原得到对烷基邻氨基苯酚,再与烷基苯氰在多聚磷酸脱水剂存在下合环得到2,5-取代苯并噁唑类液晶化合物,并在此基础上进一步拓展,合成出了系列化合物.标定了产品结构,测定了相关液晶参数,对液晶材料的性能进行了研究.在所研究的液晶化合物中,有的品种已实现了量产.     

韧性苯并噁嗪树脂在无卤配方中的应用

文章主要研究了韧性苯并噁嗪在无卤配方中应用,在配方中添加一定份数的韧性苯并噁嗪树脂,得到的板材表现出良好的韧性以及阻燃性、热稳定性、耐化学性等性能。     

新型无卤无磷阻燃印制线路板基板

苯并噁嗪是由酚、伯胺和甲醛为原料合成的一种苯并六元杂环化合物。与环氧树脂、双马来酰亚胺、酚醛树脂和氰酸酯等传统的高性能基体树脂所存在的这样或那样的不足相比较，苯并噁嗪树脂较好的将优良的成型加工性、综合性能和性价比集于一身。该树脂的原料来源广泛，价格低廉，合成丁艺简便；其固化反应为开环聚合，无小分子释放，固化收缩小（近似零收缩），易于成型加工，制品孔隙率低、尺寸精度高；固化产物具有较高的Tg和热稳定性，较高的成炭率，优良的阻燃性和机械性能，以及低的吸水率。     

双噁唑啉改性苯并噁嗪的性能研究

本文介绍了苯并嗯嗪的合成以及改性的方法。2，2’-（1，3-间苯撑）双-2-噁唑啉与二胺型苯并嗯嗪树脂共聚，共聚后树脂的玻璃化转变温度可达到250℃；残炭率可达到54S。填料的加入使得苯并嗯嗪的阻燃性达到应用需求。但是填料过量会导致工艺性能下降。在少量加入某几种阻燃剂的情况下，能使得树脂具有理想的阻燃性能，UL94测试能够达到V-0级。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.