基于MC9S12X128无刷直流电机控制系统设计

为满足对直流无刷电机控制要求精度高、调速性能好、系统实现成本低的需要,设计了一种无刷电机控制系统。该系统以MC9S12X128单片机为控制核心,采用IR2130芯片驱动MOSFET功率管,实现对直流无刷电机三相六拍PWM控制。系统硬件电路结构简单、调速方便、功耗低。实际运行测试表明,电机可以长期稳定运行。     

基于MC9S12D64单片机的直流无刷电机控制系统设计

设计了基于飞思卡尔MC9S12D64单片机的无刷直流电动机控制驱动系统的电路,论述了该控制系统的软、硬件实现方法,它以MC9S12D64单片机为控制中心,由IR2110驱动MOSFET功率逆变器,实现三相六拍的PWM调制的直流无刷电机的控制.实验结果表明,该设计硬件简单,功耗低,可应用到150℃高温环境,电机运行稳定可靠.     

无传感器BLDC驱动控制系统

<正> 带传感器直流无刷电机一直在电动车驱动系统中占主导地位,为克服其霍尔传感器易坏的缺点,本设计提出了基于HT 单片机控制的无传感器直流无刷电机驱动控制系统的设计方案。本设计方案能简化系统结构、降低系统成本、增强系统性能。引言近年来,国内市场上电动车使用的电机主要有有刷电机、有位置传感器无刷电机和无位置传感器无刷电机三种。使用     

基于DSP的数字伺服机构控制系统设计

为满足对直流无刷伺服机构的数字化控制,介绍了一种数字无刷直流电机伺服控制系统,以TMS320F2812型DSP为控制核心,包括中央处理电路,驱动电路,反馈电路等实现对直流无刷电机伺服系统的控制。该系统原理简单,易于实现,抗干扰能力强且控制精度高,控制效率好,已在某型伺服控制系统中广泛应用。     

基于DSP的直流无刷电机智能控制系统设计

为了更好地实现直流无刷电机的精准控制,系统利用TI的32位处理器TMS320F2812强大的数字信号处理能力和丰富的片内外设资源,结合PWM脉宽调制技术和基于反馈的按比例微分积分PID闭环控制算法,设计了高效的三相全桥逆变驱动电路,实现了一个基于DSP数字信号处理器平台的直流无刷电机控制系统。实验结果表明,系统运行稳定可靠,可移植性强,可适用于多种工业自动控制场合。     

直流无刷电机驱动芯片LB11820M的原理及应用

LB11820M是日本SANYO(三洋)公司开发的三相直流无刷电机驱动芯片。它具备开环三相电机控制所需的全部有效功能，并且具有比较完善的保护电路。文中介绍了LB11820M的特点、功能和工作原理，给出了其典型应用电路。     

双闭环无刷直流电机驱动电路的设计与实现

在对无刷直流电动机控制系统的发展及应用综述的基础上,介绍了无刷直流电动机的结构和工作原理,给出了其数学模型,并重点分析了无刷直流电机控制技术中简单易用且鲁棒性较好的PID控制算法。对无刷直流电动机控制系统的硬件和软件设计做了详细论述。该电路是基于微芯公司的电机驱动电路专用驱动芯片DSPic30f4011而设计开发的,其中主体电路架构包括电源电路,三相逆变桥电路、转速闭环、电流闭环、线电压闭环和保护电路等。系统的软件设计中,主要包括微控制器的初始化程序、开环起动、换向控制、电流、速度采样时刻控制等。     

基于CPLD的直流无刷电机驱动电路设计

介绍一种基于CPLD(复杂可编程逻辑器件)的直流无刷电机驱动电路,给出驱动电路的软硬件设计用软件代替逻辑门实现电机的保护逻辑。采用EPM7064SLC-44-10 CPLD为核心控制器,实现电机驱动所需的换相译码、死区发生器和IPM(智能功率模块)接口电路。系统软件采用VHDL语言编程,代替原来的RC电路实现的死区时间发生器。该电路具有体积小、调试方便、死区时间设置灵活等优点。     

IR2110在IGBT交流调压控制电路中的应用

介绍了IR2110驱动芯片的特点和功能,给出了用IR2110在PWM斩波控制交流调压电路中驱动IGBT的驱动电路,同时对该驱动电路和保护电路的可靠性进行了设计和分析。     

基于DSP56F805的直流无刷电机控制系统设计

介绍了基于Freescale公司DSP56F805的直流无刷电机控制系统的设计.DSP56F805数据处理能力强且具有丰富的专用电机控制模块,设计的控制器硬件电路简洁,控制可靠,已应用于机器人机械手控制中.对系统硬件实现和控制原理进行了详细论述.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.