室内射线跟踪关于反射次数的收敛性分析

由于射线跟踪所需时间随着反射次数增加而迅速增加,反射次数的上限值对于室内射线跟踪的精确度和效率至关重要。因此,本文开展了一个基于统计分析室内场景数据的射线跟踪收敛性研究。通过统计场景中的分布特征,分析射线跟踪不同反射路径的概率,研究接收功率关于射线跟踪最大允许反射次数的收敛关系,得出最优的反射次数上限值,实现优化室内射线跟踪的效率和精确度。将本文模型收敛性与射线跟踪仿真结果的收敛性参数进行对比,在同样计算精确度下,本文模型的收敛结果与射线跟踪仿真收敛结果一致,验证了本文模型的准确性。     

高性能射线跟踪技术在智能交通领域的应用

随着移动通信技术的快速发展和更新换代,各行各业的信息化、智能化日益依赖于无线通信的强有力保障。因此,准确的信道信息、可靠的无线覆盖至关重要。射线跟踪技术面向不同行业的各类通信场景,通过建立有效的三维场景模型,以材料电磁参数、天线参数为基础,依托高性能计算引擎,将光学的射线技术引入电磁计算领域,能够准确地表征反射、散射、绕射、透射等多种电波传播机理及其对无线系统的影响。本文介绍了作者团队自主研发的高性能射线跟踪仿真平台,围绕高性能射线跟踪技术在智能交通领域的应用案例,阐述了射线跟踪技术在轨道交通、水路交通、公路交通等智能交通领域无线网络规划与优化、无线信道建模及信道特性分析等方面的技术优势,以期以自主可控的高性能射线跟踪仿真技术更好地助力我国交通强国战略的实施。     

基于射线跟踪算法数字地图自动提取与预处理

基于城市微小区数字地图对移动通信中射线跟踪算法的重要性,针对2.5维射线跟踪算法的特点,找出了一种能自动提取建筑物几何信息并且对地图进行预处理的技术。该技术能够快速精确地提取建筑物的几何信息,以及去除数字地图中对预测结果影响较小的几何因素,减少射线跟踪算法程序运行中的遮挡判断次数。通过文中对数字地图的自动提取及预处理,能够建立实用、快速、高精度的室外微蜂窝环境电波预测模型,提高了微小区电波传播预测的准确性和效率。     

三维高斯波束跟踪传播损耗预测改进模型

针对传统射线跟踪法需要考虑绕射并涉及接收球处理,从而算法复杂、计算量大等缺点,提出了一种基于三维高斯波束跟踪和二维网格加速的电波传播预测模型。该模型通过Gabor分解法将任意口径场分布展开为高斯型口径分布,直接实现了波场积分的离散化处理;高斯波束场采用复射线场模拟,并借助几何光学法加以复延拓,可处理反射、绕射和折射等复杂问题。相比传统射线跟踪法,本文模型无需考虑接收球处理和绕射,具有数学推导简单以及计算量小等优点。数值仿真结果表明,新模型预测精度与传统射线跟踪法基本相当,但预测效率可提高数十倍。     

一种无线网络规划中的室外射线跟踪模型

针对射线跟踪技术在无线网络规划中实现的困难,提出了一种基于射线跟踪技术的室外传播模型。模型在地理建模部分吸取了数字图像处理学的方法,并采用了高效的射线发射、加速及跟踪算法,通过合理的结果收集设计,有效地降低了射线跟踪技术的复杂度,提高了计算速度。通过仿真证明了模型的准确性和有效性,为射线跟踪技术在无线网络规划工程中的实际应用提供了借鉴。     

基于射线跟踪的小区信号强度估计

基于经验模型的无线信号强度估计方法无法针对具体物理场景,估计结果精度低,无法满足移动通信网络规划和优化的需要。射线跟踪技术能依据场景信息跟踪电波传播路径,但现有的反向跟踪方法在进行室外成片区域信号强度估计时复杂度高,无法实用。为提高估计结果的精度,降低估计方法的复杂度,提出了一种正向跟踪信号强度估计方法,将基站天线处发射的电磁波模拟成离散的射线,在考虑建筑物形状、分布信息的基础上采用基于网格的搜索算法跟踪射线路径,在接收点处对反射、绕射射线接收合并,最终得到基站覆盖区域的信号强度分布。仿真结果表明该方法的场强估计结果和实测数据吻合程度远大于经验模型估计方法,并且80%左右的估计结果和实测数据的误差在12 dBm以内,可应用于移动通信网络规划和优化。     

融合波模和射线理论的矿井电波传播模型

本文提出了电波在煤矿井巷内传播的融合模型:利用波导波模理论修正射线模型,确定巷道内源射线的个数及其离开发射机的方向;通过几何光学基本定律证明矩形巷道内射线传播路径投影的反射定律和夹角定律,推导出射线到达接收天线所在巷道截面的位置、经历的反射次数、路径长度等与射线离开角的关系,以改进主动射线跟踪法,简化计算;运用接收球原理判断各射线经反射后能否到达接收机.经仿真并与实测数据比较,验证了模型的正确性.     

射线跟踪技术在无线网络规划中的应用分析

介绍射线跟踪技术的原理，探讨射线跟踪模型在无线网络规划中的应用。     

基于三维的射线跟踪八叉树算法的城市微区电波传播预测算法模型

本文建立了一种有效的基于射线跟踪技术的三维城市微区电波传播预测的计算模型.该模型将计算机图形学中的八叉树分区技术扩展至射线跟踪技术,并由此提出了一种新的有效的射线跟踪算法,射线跟踪八叉树算法.并基于几何光学、一致性绕射(UTD)对场强进行计算,所得结果与实测值及FDTD的结果进行了比较.     

电波传播

0309659基于三维的射线跟踪八叉树算法的城市微区电波传播预测算法模型[刊]/周力//电子学报.—2002,30(12).—1776～1778(K)本文建立了一种有效的基于射线跟踪技术的三维城市微区电波传播预测的计算模型。该模型将计算机图形学中的八叉树分区技术扩展至射线跟踪技术,并由此提出了一种新的有效的射线跟踪算法,射线跟踪八叉树算法。并基于几何光学、一致性绕射(UTD)对场强进行计算,所得结果与实测值及 FDTD 的结果进行了比较。参5     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.