基于低级别读写器协议的无线射频识别中间件系统

无线射频识别（RFID）技术的应用在近年来取得了长足的发展。RFID中间件系统是RFID网络的重要组成部分,位于RFID应用系统和RFID读写器之间,是RFID标签信息的处理中枢。传统的RFID中间件系统对上层的RFID应用系统提供了统一的应用层事件（ALE）接口,但是和RFID读写器之间的连接则采用适配读写器厂商私有接口的方式,不利于快速构建RFID应用系统。基于低级别读写器协议（LLRP）的RFID中间件系统提供了标准的接口来接入不同厂商的读写器,大幅度地提高了构建RFID应用系统的效率。     

基于ARM的嵌入式RFID中间件系统设计

无线射频识别(Radio Frequency Identifi cation,RFID)技术作为新一代识别技术的代表,近年来发展迅猛。随着RFID技术的深入发展和应用,RFID系统的中枢和核心组成部件的中间件成为了研究的热点。RFID中间件是连接底层设备和上层应用的桥梁,可以实现RFID读写器与企业应用的连接。嵌入式RFID中间件构架于嵌入式系统的弱计算环境中,它有别于运行在一般计算机上的软件中间件,而是在嵌入式系统上实现RFID中间件功能,使中间件可以用于各种系统集成。     

基于JMS的RFID中间件的研究与实现

文中简单介绍了RFID技术以及RFID系统向企业级应用集成的关键技术--RFID中间件,并且在详细分析RFID中间件系统功能的基础上,重点阐述了基于JMS技术的RFID中间件消息系统的构建方法,并提出了一种消息系统的设计思想和实现方法,解决了RFID系统向企业级应用集成中数据共享的问题。     

基于应用需求和RFID局限性的RFID中间件设计

射频识别（RFID）技术致力于自动、廉价地跟踪供应链中的流通产品。需要专用的中间件解决方案扩散RFID标签和阅读器，以管理阅读器并处理大量捕获的数据。本文分析了这些应用需求并设计了射频识别中间件。我们认为，一种RFID中间件不仅要着眼于应用的需求，而且也必须考虑到被动RFID技术强加的局限性。     

基于RFID的智能货架设计与实现

基于RFID技术的智能超市管理系统能有效提高超市管理水平及管理效率,是未来超市发展的必然趋势。本文主要介绍基于RFID智能货架的设计与实现。该系统是在货架上部署读写器,不仅实现了对粘贴RFID标签的商品进行实时监控,而且采用中间件技术实现了对商品的智能监控,能及时发现缺货、过期、错架等事件并发出警告信息,为实现超市管理的最终智能化打下了良好基础。     

RFID中间件系统关键模块的设计与实现

在分析RFID中间件系统功能的基础上,阐述了基于J2EE技术的RFID中间件系统的构建方法,介绍了系统结构和软件设计.提出了RFID中间件系统中关键模块的一种设计思想和实现方法,充分体现了JAVA2企业版分布式计算平台的优越性.     

基于IBM RFID中间件的图书管理系统构建

IBM RFID中间件具有屏蔽RFID硬件设备差异和应用系统差异的特征,这一特征使RFID技术与现有的图书管理系统实现无缝链接的同时,保证了两者的独立性。本文在介绍IBM RFID中间件的基础上,给出了基于IBM RFID中间件的图书馆管理系统,并阐述了系统的工作过程。     

基于JavaEE6的RFID中间件系统研究

无线射频识别(RFID,Radio Frequency Identification)是一种自动识别技术,它利用射频信号通过空间耦合实现无接触式的信息传递以达到识别目标的目的。由于直接从RFID阅读设备获取电子标签的数据会产生大量的冗余数据,通过RFID中间件对其处理加工可直接供给应用系统使用。现提出一个基于JavaEE6平台利用面向服务架构(SOA,Service Oriented Architecture)原则的RFID中间件系统架构设计方法,研究了基于JavaEE6中间件系统的智能图书馆系统。     

高级RFID阅读器应用对处理器的要求

射频识别（RFID）技术平稳地渗透到我们日常生活的许多方面。从超市的库存管理到快速收款，这项技术正改变着许多现有的应用并支持新的应用。在RFID前端，“信号链”从有效装置上的小标签开始，将信息、传送给一个或多个RFID阅读器，当标签出现在特定的区域内时，阅读器检测。在RFID后端，基于服务器的系统保持并更新标签数据库。RFID系统框图如图1所示。     

RFID系统的标签天线设计与应用综述

介绍了射频识别(RFID)技术的起源与发展历程,根据RFID技术的原理,指出RFID系统相对于传统识别技术的优势并阐明了标签天线在RFID系统中的关键作用.简述了目前RFID技术在市场上的典型应用,分析了天线设计的技术难点,并对国内外关于实现标签天线小型化、宽频带、高增益与阻抗匹配的设计方法和研究进展进行了总结.基于R...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.