同步加速器产生飞秒X射线脉冲

同步加速器使多束电子通过摆动器的调制磁场 ,产生高亮度 X射线辐射。电子动能的调制产生 X射线脉冲发射 ,其持续时间通常为几皮秒 ,这对相变动力学和生物医学相互作用等大多数研究仍然太慢。 Schoenlein等人已证明从同步加速器可获得持续时间仅为几飞秒的 X射线脉冲。虽然电子束通过摆动器 ,但它们都以飞秒的激光脉冲击中它 ,这就增加了小电子包的能量 ,并在空间上将它们与主电子束分开 ,以产生较短的脉冲同步加速器产生飞秒X射线脉冲@叶青     

自由电子激光器的进展

一、进展概况高功率短波长和波长连续可调高功率激光器一直是激光研究的两个主要方向,自由电子受激辐射正是为实现这种目的的一种新途径.原理上,利用自由电子受激辐射可以实现从微波至X射线、γ射线宽波长连续可调的高功率、高效率微波与光激射器.因此,它已引起人们的普通重视.早在1933年,有人根据量子理论提出利用"摆动"或"波动"电子束与电磁波相互作用产生"受激散射"的概念.两个散射区域分别为:(1)康普顿散射:两波互作用(或单个电子互作用);(2)拉曼散射:三波互作用(或集团电子互作用).1951年莫茨(Motz)提出自由电子受激辐射理论.他认为,当电子行经电场或磁场时产生辐射,辐射的频率取决于电子的速率,电子能量从1兆电子伏到1千兆电子伏范围内可产生从微波至硬X射线频谱.他认为,将电子束聚焦,可以使一群电子相干地辐射,相干辐射功率比非相干辐射约高     

宇宙辐射与飞行人员防护

宇宙辐射来自银河系。初始宇宙辐射主要为原子系数27以下的高能粒子,在地球大气层与氮、氧原子碰撞,生成以质子、电子、μ介子、中子、光子(γ射线)为主要成分的次级宇宙射线。人体所受宇宙辐射的剂量当量单位为希沃特(1Sv=1000mSv=10~6μSv),地球上接受到的宇宙辐身剂量受地球磁场和大气层的影响甚大。在高度20～22     

掺杂缺陷层的异质双周期光子晶体的磁光效应

通过在掺杂缺陷层的异质双周期光子晶体的表面添加一层具有Voigt效应的磁光半导体层,使该光子晶体结构的缺陷模透过率对外磁场产生响应。首先研究磁光半导体层的介电常数（折射率）随外磁场的变化规律,进而利用传输矩阵法研究该结构缺陷模的透射率随外磁场的变化规律。研究结果表明:在选取合适的材料参数和结构参数条件下,可实现缺陷模透射率与磁场的相关性,获得受磁场调控的缺陷模透射率,从而该结构可以应用于窄带滤波器的磁控开关。     

专利文献介绍

X射线阴极靶监视装置专利号:美国4321471,发明者:Villian P.Holland,Anthony Pellegrino,申请日期:1980年2月4日。内容提要:本专利介绍一种能实时检测X射线阴极转靶转速和靶面X射线辐射强度变化的监视装置,其特点是监视装置安装在X射线源的外面,与靶面成切线的方位上。这样安装的好处是不影响X射线的正常使用,而且沿靶面切线方向发出的X射线强度变化由于根部效应(heeleffect)得到加强,因而有利于提高检测的灵敏度。检测器可以用闪烁材料通过光导管造出,也可以采用硅、锗二极管或者通过离子室将X射线光子直接转换为电讯号。     

同步加速器辐射产生飞秒辐射脉冲

劳伦斯·伯克利国家实验室的研究人员已产生持续不足 30 0 fs的频闪式同步加速器闪光。这些亚皮秒脉冲的光谱范围从红外延伸至 X射线波长。在伯克利实验室的高级光源 ( ALS) ,研究者可直接从同步辐射加速器储存环的电子束中提取飞秒脉冲辐射。从 AL S直线加速器中产生 ( 50 Me V)的相对论电子脉冲与红外激光产生的 10 0 fs脉冲交叉成 90°角。在这种布局中 ,部分红外光子与电子相互作用并被散射。散射光子具有 X射线的能量 ,沿与电子束相同的方向传播 ;离散射脉冲中心最近的光子具有最高的能量。散射脉冲的弛豫时间由红外脉冲通过电子束…     

用激光产生电子—正电子对

当一束５０ＧｅＶ电子束与聚焦成几微米大小的太瓦级激光脉冲迎面碰撞时,可能发生异常事件：即穿过焦点处甚稠密激光场的每一电子使每一低能光子迅速提高到几吉电子伏的γ射线能量,然后,此“康普顿后向散射”γ光子与迎面来的激光光子碰撞时,它们中的大多数便产生电子...     

软X射线成像光学技术的发展

成像光学系统的基本性能的要求是分辩率。根据成像原理,分辩率受光波衍射的限制。提高衍射极限分辩率的途径之一是减小波长。X射线光学成像是在这一指导思想下开始研究的,电子光学成像也是这样。而且这两种成像技术的研究,在历史上几乎是同时并进的。1895年伦琴发现X射线,1897年J.J汤姆逊证实了电子的存在;1923年康普顿证明了掠入射条件下射线在抛光金属表面可以像可见光一样反射、聚焦,1926年H。布希等证明了旋转对称静电场和静磁场可以使电子束偏折、聚焦和成     

用于探测能量为0.110keV光子的夹心结构CsI光阴极

为了稳定而有效地探测能量范围在0.110keV之间的软X射线,研制并优化了一种高低密度夹心结构的透射式CsI光阴极。它的光子探测效串大约是高密度透射式CsI光阴极的110倍。所测得的光电发射次级电子能量分布曲线与高密度CsI光阴极类似,半极限值的全宽度(FWHM)不到2eV。由于它的量子效率高而次级电子能量分布范围相当窄,这种夹心结构透射式CsI光阴极广泛地应用于软X射线探测器和计数器,特别是软X射线条纹摄相管。     

软X射线激光器的定量考虑

极大的兴趣引向了从高功率脉冲源产生的稠密高能等离子体产生X射线。已经提出了几个可能在X射线区内获得激光作用的方案。为了估计这些X射线激光器途径的可能性,有必要定量地考虑激励过程的性质和获得反转和受激发射必需的条件。在本文中,考虑了用强电流相对论电子束、高功率锁模钕玻璃激光器,和高功率脉冲CO2激光器激发低原子序数固体靶的可能性。分析指出,在目前,只有脉宽在微微秒时间范围的非常高功率激光器才能激发低原子序数靶而获得X射线激射作用,强调下列建议的方案。对于100到1000电子伏特范围的要求是能满足的,但是对于10千电子伏特X射线范围,所需的功率和脉冲宽度,用目前报道的高功率激光器是不可能的。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.