基于金属狭缝-凹槽结构单向激发表面等离子体

单向激发表面等离子体,在光通信、集成光学、光刻等方面有着广泛的应用。从理论上提出了一种亚波长金属狭缝-凹槽结构,利用背照射的激发方式,在金属膜表面实现了单向激发表面等离子体。设计过程中采用时域有限差分法进行数值模拟。首先改变凹槽的深度和宽度使得通过凹槽传播的表面等离子体的电场强度达到最低,并利用散射矩阵理论解释了其物理机制。然后基于表面等离子体干涉原理,改变狭缝与凹槽之间的距离使向背离凹槽一边传播的表面等离子体干涉加强,从而使金属狭缝-凹槽结构实现单向激发表面等离子体,最大分束比可以达到8。     

双缝波导结构表面等离子体可见光分束器设计

理论设计了一种金属-介质-金属(MIM)双缝结构的表面等离子体可见光分光器。利用表面等离子体效应及经典光学干涉原理,改变双缝波导结构中的填充介质、结构厚度、狭缝宽度、双缝宽度等参数,可使波长不同的两束可见光通过双缝亚波长结构后实现表面等离子分束的效果。设计过程中采用时域有限差分法(FDTD)进行数值模拟,分别模拟计算了双缝宽度相同填充介质不同和双缝填充介质相同宽度不同两种情况下的光场分布,且都得到了较好的分束效果,最大分束比可达12。该设计结构简单,可以通过电子束刻蚀系统等实验设备加工,具有较好的应用前景。     

一种新型的光波导光学相控阵的特性研究

采用光纤作为传输链路,将光子晶体光纤作为系统的输出阵列,LiNbO3波导作为相位调制器,构建了一种基于光纤光路的光波导光学相控阵。根据光学相控阵理论和LiNbO3波导的电光效应,分析了系统的可行性, 并研究了这种新型结构下的光波导光学相控阵的输出衍射特性和光子晶体光纤阵列结构参数的关系。研究结果表明通过控制施加在LiNbO3波导上的电压可以改变出射光束的附加相位从而实现光束的偏转;光子晶体光纤阵列上的纤芯数量、纤芯间距以及纤芯的排列方式等结构参量会对系统的输出光束的光强分布、半峰值全宽度（FWHM）和归一化的振幅分布产生影响。随着光子晶体光纤制作工艺的不断发展,系统的光束扫描质量将会逐渐提高并且色散特性和传输特性将会获得改善,为今后这种光学相控阵系统的设计提供了理论基础和技术依据。     

液晶光学相控阵的双波束成形和2维扫描技术

为了在光学相控阵中实现双波束成形和2维扫描,以玻璃作为基底材料,以液晶作为移相介质,利用液晶的电控移相特性,对入射光束进行双波束成形和相控空间扫描;采用现场可编程门阵列芯片对液晶驱动芯片进行波控数据发送,完成对液晶移相阵列的电压驱动,从而达到电控光束扫描功能,完成单个透射型液晶光学相控阵组件的研制;利用该组件的电控光束扫描功能,采用多个组件级联的方式,实现基于透射型液晶光学相控阵组件的双波束成形和2维扫描技术。结果表明,该系统能够实现双波束独立偏转控制,以及高精度的空间2维偏转。     

基于周期性亚波长复合单元结构的表面等离子体光开关

本文研究了包括圆环结构、内置纳米棒的空心圆结构和复合结构周期性亚波长孔阵列的增强光透射特性,并证实了在复合结构中的内置纳米棒的空心圆环境的光场局域强度能够被显著地增强。此外,通过调控入射光的偏振方向,复合结构中纳米棒和空心圆的局域表面等离子体共振响应模式会发生相互转换。另外,我们设计了一种新型紧凑无泵浦光干扰并具有双通道的表面等离子体光开关。最后,该结果为表面等离子体光子器件提供了一种新思路,并拓展了微纳结构在光学通信及信息处理领域的应用范围。     

基于超表面的宽波带光束聚焦研究

超颖表面是一种基于亚波长结构的光学平板膜层,可在亚波长传输范围内调控入射光束的相位、振幅和偏振。为了代替传统的曲面光学元件,采用传输相位调控理论和广义折反射定律,设计了一种新型的超颖表面,并进行了程序模拟,取得了此亚波长结构对光束聚焦调控的数据。结果表明,当增加超颖表面的椭圆基元的长短轴长度时,材料的等效折射率增加,并且适用的波长范围增加到0.7μm~1.2μm;通过优化超表面结构参量,可实现在宽波带范围内的相位调控,进而获得聚焦光场的优化,在一定程度上可以代替传统光学元件实现光学聚焦。该研究结果在超分辨率成像及光刻等方面有一定参考价值,在一些特殊的需要亚波长结构调控光束的情况下可以使光路简单化,并且比传统的光学元件有着厚度方面的优势。     

表面修饰的亚波长金属Cu狭缝结构透射特性研究

为了深入研究表面修饰余弦凹槽的亚波长结构对太赫兹波透射特性的调控规律,提出一种表面修饰余弦凹槽的太赫兹亚波长金属Cu狭缝结构,基于时域有限差分法,对亚波长金属Cu狭缝结构的太赫兹波透射光谱特性进行模拟。仿真结果表明,通过改变金属Cu狭缝结构上下表面余弦凹槽的结构排布、数量、周期、深度及狭缝深度、宽度等参量,实现了对太赫兹波透射强度的调控。     

金属亚波长狭缝阵列结构的太赫兹偏振透射特性研究

利用太赫兹时域光谱技术,研究了金属亚波长狭缝阵列结构的太赫兹透射特性。结果表明,太赫兹波会激发金属狭缝阵列结构的表面等离体波共振,表面等离子体共振产生太赫兹波段超强透射现象。由于表面等离子体共振效应,这种狭缝结构对于透射的太赫兹产生很高偏振度,这些实验结果为制作太赫兹波段偏振器件提供了有益的参考。     

亚波长结构太赫兹仿表面等离子体波的研究进展

本文回顾了亚波长孔阵列异常光学透射现象及其物理机制的研究过程,并聚焦于太赫兹波段异常透射现象和在这一现象中起主要作用的仿表面等离子体波。从这种仿表面等离子体波的提出到实验验证以及一些重要的应用,展示了如何通过微纳结构来产生这种仿表面等离子体波的方法,并将这种仿表面等离子体波应用到太赫兹电子学辐射源、太赫兹量子级联激光器,太赫兹传输器件和太赫兹辐射调控等方面。通过仿表面等离子体激元来操纵太赫兹波的方法将会对下一代太赫兹光子器件产生有益的影响。     

入射光偏振对金纳米棒状颗粒光学性质的影响

利用离散偶极近似(Discrete dipole approximation,DDA)方法分析了入射光偏振状态对单个金纳米捧状颗粒的光学性质的影响,并给出了单个金纳米棒状颗粒底面和剖面的近场分布图,对于设计实现基于金属微纳结构的纳米光子器件具有一定的指导意义.研究结果表明,不同的入射光偏振方向会激发不同的表面等离子体模式(横向表面等离子体共振和纵向表面等离子体共振),这将影响棒状颗粒的消光谱峰和近场分布.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.