差公式电流模式CMOS OTA—C双二阶滤波器

应用信号流图法、提出一种新颖的差分式连续时间电流模式ＣＭＯＳ跨导－电容双二阶滤波器，该滤波器仅使用最少量的差分式ＯＴＡ和电容并且能有效地消除次谐波失真，具有较低的特征参数灵敏度等优点；面向实际电路完成了ＭＯＳ管级的计算机仿真仿真结果表明所提出的电路方案正确有效，适于全集成。     

基于MCCⅡ的差分式电流模式连续时间滤波器

提出了一种改进的多输出第二代电流传输器（ＭＣＣⅡ）的ＣＭＯＳ实现电路，应用该电路构成了一种新颖的差分式电流模式积分器。将提出的积分器方案及相应的ＣＭＯＳ实现电路应用于差分式电流模式连续时间滤波器。针对所提出的电路，完成了ＳＰＩＣＥ仿真，仿真结果表明所提出的电路方案正确     

差分式电流模式CMOS OTA-C双二阶滤波器

应用信号流图法，提出了一种新颖的差分式连续时间电流模式ＣＭＯＳ跨导—电容双二阶滤波器，该滤波器仅使用最少量的差分式ＯＴＡ和电容并且能有效地消除偶次谐波失真、具有较低的特征参数灵敏度等优点；面向实际电路完成了ＭＯＳ管级的计算机仿真，仿真结果表明所提出的电路方案正确有效，适于全集成。     

基于多输出端差动差分电流传送器跳耦结构滤波器

提出了一种新颖的多输出端差动差分电流传送器（ＭＤＤＣＣ）及其ＣＭＯＳ实现电路,用计算机模拟比较了ＭＤＤＣＣ和第二代电流传送器（ＣＣⅡ）的特性;以ＭＤＤＣＣ构成了全差分式连续时间电流模式跳耦结构低通滤波器,分析并模拟了所提出的滤波器的特性,仿真结果表明所提出的电路方案正确有效;ＭＤＤＣＣ电路兼有差动放大器（ＤＤＡ）和ＣＣⅡ两者的优点,适于实现全集成连续时间滤波器。     

集成电路中栅介质膜的C－V测试误差分析及其修正模型

通过具有各种串联电路的ＭＯＳ电容的分析测试表明：串联电阻引起ＭＯＳＣ－Ｖ特性畸变、失真，并与介质膜电容大小有关；串联电容使ＭＯＳＣ－Ｖ特性严重不稳定；而当存在电容和电阻并联的串联电路时，即使串联电路中的电阻高达１ｋΩ以上，只要其并联的电容远大于介质膜电容，这个串联电路的影响就可以忽略不计。也测试分析了硅衬底参数和测试环境对ＭＯＳＣ－Ｖ特性的影响。指出了改善测试分析准确性的各种有效途径。提出了ＭＯＳＣ－Ｖ特性的串联电阻修正模型。即：存在串联电阻效应的判据；ＭＯＳＣ－Ｖ特性失真的判据；串联电阻计算公式、电容修正公式及ＭＯＳＣ－Ｖ修正过程。举例说明修正模型编程的实际应用：超薄栅氧化层ＭＯＳＣ－Ｖ特性的修正；ＣＭＯＳ电路中，Ｐ阱中ＭＯ５电容Ｃ－Ｖ特性的修正。     

集成电路中栅介质膜的C—V测试误差分析及其修正模型

通过具有各种串联电路的ＭＯＳ电容的分析测试表明：串联电阻引起ＭＯＳＣ－Ｖ特性畸变，失真，并与介质膜电容大小有关；串联电容使ＭＯＳＣ－Ｖ特性严重不稳定；而当存在电容和电阻并联的串联电路时，即使串联电路中的电阻高达１ＫΩ以上，只要其并联的电容远大于介质膜电容，这个串联电路的影响就可以抱略不计。也测试分析了硅衬底参数和测试环境对ＭＯＳＣ－Ｖ特性的影响。指出了改善测试分析准确性的各种有效途径。提出了ＭＯＳ     

基于改进型CCII的电流模式多功能二阶滤波器

本文给出了一种结构简单性能优良的改进型电流传送器，并提出了由该电流传送器实现的电流模式多功能双二阶滤波器。该滤波器由三个ＣＣＩ±和五个无源元件构成，可以实现二阶低通、高通、带通带阻和全通滤波功能，且可以多端输出，电路中电阻电容全部接地，适于全集成。中心频率和品质因数的无源灵敏度很低，面向实际电路完成ＭＯＳ管级的ＰＳＰＩＣＥ仿真，结果表明所提出的电路方案是可行的。     

MOSFET－C滤波电路TT平衡结构的CCⅡ±实现及仿真

本文提出了全集成ＭＯＳＦＥＴ电流传输器ＣＣⅡ±为基础的平衡结构积分器，并对其消除非线性因素进行了理论分析。同时提出了以全集成ＭＯＳＦＥＴ电流传输器ＣＣⅡ±为基本电路元件的有源ＲＣＴＴ滤波器平衡模式，并利用ＳＰＩＣＥ（Ⅱ）通用模拟电路程序，对全集成ＭＯＳＦＥＴ－Ｃ平衡结构精确连续时间二阶滤波器输出电压幅频特性进行了仿真分析。     

功耗电流小于200nA的Al栅CMOSIDD失效分析

针对ＣＭＯＳ个别电路的静态功耗电流ＩＤＤ功率老化失效问题，根据ＣＭＯＳ的设计结构和工艺特点，本文从静电和栓锁的角度提出了几种失效模型并分析了ＩＤＤ几种失效机理。     

电流型多值CMOS电路的化简

本文提出了电流型多值ＣＭＯＳ电路的化简方法，该方法在关键在于寻找适合于电流型多值ＣＭＯＳ电路实现的覆盖，设计实例表明，本文提出的设计优于Ｇ．Ｗ．Ｄｕｅｃｋ等人（１９８７）的设计。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.