光纤光谱结合模式识别无损检测苹果表面疤痕

为了实现基于光纤光谱技术结合模式识别无损检测苹果表面疤痕, 利用光纤光谱采集系统采集了完好无损和表面有疤痕苹果的光谱数据, 采用标准正态变换(SNV)和1阶导数对原始光谱数据进行预处理; 利用主成分分析方法对预处理后的光谱数据进行降维, 以提取能反映苹果表面疤痕的特征光谱; 利用k最近邻(KNN)模式识别方法和偏最小二乘判别分析方法, 建立了苹果表面疤痕的识别模型。结果表明, 采用主成分分析法选择了累计贡献率超过99%的前8个主成分作为样本集特征光谱数据, 很好地实现了光谱数据的降维; 利用1阶导数+KNN识别模型对校正集以及SNV+KNN识别模型对预测集中正常果和疤痕果的正确率识别均高达96.0%。验证了基于光纤光谱技术结合模式识别方法无损检测苹果表面疤痕的可行性。     

基于高光谱成像和模式识别的无损检测苹果表面损伤

为了实现苹果表面损伤的快速无损检测,基于高 光谱成像技术结合模式识别算法建立了苹果表面损 伤检测模型。首先,利用高光谱图像采集系统采集完好无损和表面损伤苹果样本的高光谱图 像,提取正常 区域和损伤区域的平均光谱反射率曲线；然后,采用标准正态变换(SNV)和多元散射校正(MSC)分别 对原始光谱数据进行预处理；最后,利用偏最小二乘判别分析(PLS-DA)方法,建立了苹 果表面损伤 SNV+PLS-DA和MSC+PLS-DA检测模型。结果表明:采用SNV和MSC光谱预处理方法可有效地消 除高 光谱图像中的噪声；利用SNV+PLS-DA检测模型对校正集和检验集样本的正确识别率分别为 70.8%和 77.5%,而采用MSC+PLS-DA检测模型对校正集和检验集样本的正确识 别率分别为71.7%和77.5%。因此, 基于高光谱成像技术结合模式识别方法,可实现苹果表面损伤的无损检测。     

基于高光谱技术的长枣内外品质同时检测

采用近红外高光谱成像技术,对长枣表面轻微损伤 和果肉硬度进行无损检测。在970～ 1630nm波 长范围内对高光谱图像数据进行主成分分析(PCA),得到第3主成分图像最适合检测长枣表面 损伤。波段比(BR)算法中, 选取1387nm和1 229nm两个波段的图像进行比值运算, 采用 1455nm单波 段图像构建掩膜作用于比值图像, 最后对图像进行阈值分割和形态学变换完成损伤区域的特征提取。BR算法检测长枣轻微损 伤的准确率达 到91.5%。对反射光谱进行多元散射校正(MSC)后与长枣果肉硬度值进 行回归分析,选择相关系数较大的5个特 征波长作为BP神经网络输 入,建立果肉硬度预测模型。预测集相关系数R和均 方根误差(RMSEP)分别为0.904和15.163。研究结果表明,利用高光谱成像技术可以实现长枣内外品质同时检 测。     

基于PCR和PLS的蔗糖浓度透反射测量方法研究

利用近红外透反射光谱技术,研究短波近红外光谱(780~1100nm)无损检测蔗糖溶液的可行性,并通过主成分回归(PCR)和偏最小二乘(PLS)方法建立了蔗糖溶液的近红外定量分析模型。采用Savitzky-Golay卷积平滑(5点)和多元散射校正(MSC)进行预处理,并且对预处理后的数据进行建模分析。PCR定量分析的结果:主成分数PC=7,交互验证相关系数RCV=0.957335,交互验证的校正标准偏差RMSECV=0.015859;PLS定量分析结果:主成分数PC=4,交互验证相关系数RCV=0.975789,交互验证的校正标准偏差RMSECV=0.012251。分别用PCR和PLS的校正模型对预测集样本进行预测,两种模型的预测标准偏差RMSEP分别为0.0127,0.0118。二者均对高浓度蔗糖溶液的预测结果比较理想,而且在PLS模型下,77%以上的样本相对误差在10%以下,较PCR模型的高。综合结果,PLS所建立的模型简单,而且精度很高,所以,基于短波近红外光谱的蔗糖浓度的快速无损检测是可行的。     

近红外光谱技术在燕麦种子活力测定中的应用研究

快速准确无损测定牧草种子活力是当前种子生理研究中的一项重要内容.试验以甜燕麦种子为材料,采用近红外光谱结合主成分-马氏距离模式识别方法鉴别了3种不同活力的燕麦种子.研究结果表明, 在4000～6900cm-1波数范围内的光谱, 通过SNV (Standard Normal Variate )预处理方法, 用4个主成分建立的模型效果最佳, 模型对校正集样本和预测集样本的鉴别率都分别达到100%.该研究利用近红外光谱技术为快速准确无损测定种子活力提供了一条新途径.     

杂交稻种品系与真伪的可见-近红外光谱鉴别

提出了一种基于可见-近红外光谱技术快速、无损鉴别杂交稻种品系与真伪的新方法。采集了5种稻种的光谱数据,各获取32个样本,随机分成训练集(125份)和检验集(35份)。光谱经S.Golay平滑和标准归一化(SNV)处理后,以主成分分析法(PCA)降维。将降维所得的前9个主成分作为新变量。分别用模糊模式识别、BP-神经网络、Fisher多类线性判别以及Bayes多类逐步判别四种方法进行分析。对35个未知样的预测结果说明可见-近红外技术进行杂交稻种品系与真伪的快速、无损鉴别是可行的,且PCA结合Bayes多类逐步判别是一种优选方法。     

基于独立成分分析的高光谱图像数据降维及压缩

该文提出了一种以高光谱图像分析为目标的基于独立成分分析的高光谱图像降维和压缩方法。该方法首先通过独立成分分析提取高光谱数据的光谱特征实现高光谱图像降维,再对降维后的图像采用预测和自适应算术编码的方法进行压缩。对220波段和64波段高光谱数据的实验结果表明,该方法与基于主成分分析的降维相比,压缩比有所提高,特别是更有利于后续的分析处理,但峰值信噪比有所降低。     

基于可见/近红外反射光谱的稻米品种与真伪鉴别

利用可见/近红外光谱技术对市场上5种稻米进行了鉴别.以ASD FieldSpec3地物光谱仪采集了5种稻米的光谱数据,各获取35个样本,随机分成训练集(150份)和检验集(25份),并分别采取全波段与特征波段(400~500nm、910~1400nm与1940~2300nm)两种方法建立模型进行分析.光谱经S.Golay平滑和标准归一化(SNV)处理后,以主成分分析法(PCA)降维.将降维所得的前9个主成分数据作为BP人工神经网络(BP-ANN)的输入变量,稻米品种作为输出变量,建立3层BP-ANN鉴别模型.利用25个未知样对模型进行检验,结果表明两类模型预测准确率均高达100%,其中特征波段模型比全波段模型具有更高的预测精度,说明利用可见/近红外技术结合PCA-BP神经网络分析法进行稻米品种与真伪的快速、无损鉴别是可行的,且提取特征波段是优化模型的有效方法之一.     

多指标混合逐次投影高光谱图像降维算法

降维对于高光谱图像解译具有重要意义。基于二阶统计量分析的经典主成分分析方法在降维过程中会丢失小目标信号。为解决这一问题,本文中引入高阶统计量作为投影指标对主成分分析方法进行拓展,提出了一种基于不同统计量描述的混合逐次投影的高光谱图像降维算法。该方法在保持主成分分析优点的同时,有效结合了非正交向量投影的特点,可以在降维后的低维空间中保留异常信号成分。真实高光谱图像数据的实验结果证明,该方法相对于主成分分析可以提取更加完整的低维信号子空间。     

基于方差选择和高斯朴素贝叶斯的草地牧草高光谱图像识别研究

近年来,草地调查和监测工作中主要基于卫星遥 感光谱图像,但其整体分辨率略 低、成本高,具有一定的局限性。而近距离获取的高分辨率高光谱图像可弥补图像分辨率较 低的缺陷,目前研究较少。因此,本研究通过结合高光谱成像技术和机器学习,提出了一种 基于方差选择与高斯朴素贝叶斯的草地牧草高光谱图像快速准确识别方法。首先,利用高光 谱成像系统采集可见-近红外光谱(400000 nm)的草地高光谱图像,通过基于方差选择的 降维方法优化特征中的有效信息;然后,采用高斯朴素贝叶斯(gaussian naive bayes,Gau ssianNB)和支持向量机(support vector machine,SVM)并结合K折交叉验证法分别建立识别 模型;最后,通过Kappa系数、OA、测试时间等指标进行模型评价。预处理环节中对比多元 散射校正(MSC)、标准正态变量变换(SNV)、归一化(normalize)、Savitzky-Golay平滑滤波 (SG)和移动窗口平滑光谱矩阵(nirmaf)5种方法,其中MSC预处理提高信噪比和保障预测模 型的精度与稳定性最优。特征选择与提取中,采用基于方差选择的主成分分析白化(V-pcaw )法,根据阈值和主成分选择最佳特征变量数为2,与主成分分析(PCA)法比较,总体分类精度 和Kappa系数平均值分别提高2.995%和0.050。同等情况下比较GaussianNB模型和SVM模型, 在GaussianNB模型中,经MSC处理的牧草光谱在V-pcaw特征提取后识别效果最佳,耗时最少 ,OA值达到99.33%,Kappa系数为0.99,测试 时间为0.002022 s。研究结果表明,基于方差 选择与高斯朴素贝叶斯的方法可有效增强草地牧草高光谱图像的特征表达能力,从而实现高 效快速的牧草种类识别。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.