云南移动省干100G OTN网目标架构设计思路

针对在LTE时代,省干光传送网(OTN)如何适应业务发展进行网络建设,结合省级干线光传送网的特点和影响省干光传送网建设的各种因素进行分析,提出多环网、少节点、大容量、高安全的目标网架构,为中西部省份的省干光传送网(OTN)的建设提出建设性的意见。     

省干光传送网规划建设方案浅谈

目前宽带业务高速发展,本文结合光传送网发展趋势和承载业务变化和要求,以及铁通光传送网现状和需求等实际情况,对采用智能光网络OTN建设铁通省干光传送网进行探讨.     

三网融合下的广电省干传送网建设

简要介绍了OTN技术及广电省干传送网建设背景,着重对安徽广电省干OTN传送网的光缆网建设方案、设备组网方案、ASON保护方式、网络承载能力及网管建设进行了详细论述。     

某省级传送网的发展策略研究

结合某省级运营商的网络现状,综合分析其省干传送网、城域骨干传送网、有线接入网的现网能力,明确传送网络的发展策略,改变由业务需求驱动的被动建设模式。     

OTN电交叉技术及组网应用分析

光传送网（OTN）技术正逐步取代SDH／MSTP、WDM技术,成为光传送网主流技术。本文在对OTN电交叉技术和设备以及国内运营商网络业务需求特点进行深入分析的基础上,提出了采用OTN电交叉技术组建环形网和网状网的建设方案。     

移动省干传送网引入IP over WDM几种方案比较

文章从实际工程的角度出发,探讨几种主要的移动省干传送网引入IP over WDM的组网方案,并对其波道占用、保护方式、可扩展性、工程实施难度、投资等进行了比较分析,最后给出省干传送网引入IP over WDM的建议.     

城域光传送网光缆组网方案研究

经过近几年的建设,各运营商的城域光传送网已初具规模,但是随着网络的发展和整个通信环境的变化、越来越多的数据和多媒体等新业务的涌现以及3G业务的即将开通,对目前的城域光传送网提出了新的要求,因此,在建设的同时对现网进行优化势在必行。文章从现状分析入手,结合不同情况对城域光传送网光缆组网方案进行研究。     

黑龙江移动光传送网的优化

黑龙江移动光传送网经过几年的建设已初具规模,但是随着网络的发展和整个通信环境的变化,并考虑到越来越多的数据及多媒体等新业务的涌现和即将开通的3G业务对传送网提出了新的要求,因此,在建设传送网的同时优化网络,势在必行.文章从现状分析入手,结合光传送网发展趋势提出了黑龙江移动光传送网优化改造方案.     

OTN技术与组网应用

首先介绍了OTN（optical transport network,光传送网）的概念,OTN主要技术中的数字封装技术与ROADM技术,以及OTN的4种典型设备类型。提出了基于OTN的智能光网络将为大颗粒宽带业务的传送提供非常理想的解决方案。随后,重点分析论述了如何依据《光传送网（OTN）网络总体技术要求》在国干/省干光传送网,以及城域/本地传送网2级网络中应用OTN进行组网,并提出了若干具有实用价值的工程建议。     

传送网的发展

到2002年底,数据业务需求预计增长16倍。而光传输的增长率不仅将超过数据需求的增长率,而且要超过交换机/路由器的增长率。朗讯科技公司的《传送网的发展》一文分析了光传送网发展的3种技术选择:当前模式、传送网联网和客户网联网模式,在进行仔细分析比较的基础上,讨论了光传送网的长期需求,指出开放的多业务平台、灵活地提供业务、强大的保护恢复能力、良好的可扩展性和方便的管理监控是未来光传送网的发展方向。并且探讨了SDH/SONET网络向光传送网的演进路线。本文对于下一步我国光传送网的发展、规划和建设都有着重要参考意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.