部分相干方形平顶电磁脉冲光束经相位调制透镜的聚焦特性

将稳态场的相干偏振统一理论应用于脉冲光束的研究。构建了部分相干方形平顶电磁脉冲光束,并推导出该光束经相位调制透镜后聚焦的交叉谱密度函数表达式。详细探讨了相位调制尺寸、调制深度、调制中心位置以及光束相关长度等对聚焦场光谱强度的影响。研究结果表明,局域相位调制会导致在聚焦场中产生另一光谱强度峰值,光束的相关参数和相位调制参数决定该光谱强度峰值大小,并在一定情况下使之发生移动。特别是当光源相关参数和相位调制参数处于某临界值时,会发生光谱强度峰值开关现象。同时发现,空间相关长度导致光束发生空间焦移,而脉冲时间相关长度导致光谱强度峰值在频率上的移动。     

涡旋相位编码的径向矢量光束的紧聚焦特性

为了研究涡旋相位编码的径向矢量高斯光束经过高数值孔径物镜之后的聚焦特性,采用RICHARDS和WOLF提出的矢量积分理论和数值模拟方法,对聚焦场的特征进行了理论分析和模拟实验验证,取得聚焦场分布随涡旋相位物理参量之间的数据关系。结果表明,当单个涡旋相位编码于径向矢量高斯光束时,在聚焦场能够获得2维的径向和纵向分量;当双涡旋相位对称地编码于径向高斯矢量光束时,聚焦场会出现两个光学暗点,此光学暗点处的折射率低于周围环境的折射率。这一结果对提高光学微操控的灵活性,以及对双微粒的捕获与操控是有帮助的。     

新型高功率激光加工用激光光束展宽方法的探索性研究

探索性地提出了一种基于新型扇形类抛物面聚焦镜的高功率激光加工用激光光束的展宽方法,并对该方法的实现原理和光路设计进行了研究与相关实验验证。根据几何光学原理,采用光线追迹的方法,对实际激光光束经新型光束展宽系统变换后的聚焦特性进行了分析。理论结果表明,通过光束展宽系统变换后,能够将原始圆形激光束连续扫描展宽为光强分布均匀的大尺寸(20~500 mm)弧形条状聚焦光斑。利用横流CO2激光器,对该光束展宽系统的实际光学变换特性进行了初步实验研究,实验结果与理论结果相符合。     

选区激光熔化中激光束的传输变换及聚焦特性

为了获得光束质量较好、光斑尺寸较小、功率密度较高的、适合于在选区激光熔化快速成型技术中应用的激光束,对应用于选区激光熔化快速成型技术中的高斯光束进行传输与变换。对其传输变换及聚焦特性进行了理论分析与实验验证,实验结果与理论分析的结果相符。取得了功率密度达106W/cm2以上的、光斑尺寸较小的、满足于在选取激光熔化技术中应用的光斑。将其应用于镍基合金(Ni25)和铜磷合金粉末的三维选区激光熔化快速成型。结果表明,这种传输变换及聚焦特性是可行有效的,得到了满足要求的光斑尺寸和功率密度。     

局域空心光束尺寸变换的模拟及实验

不同尺寸的局域空心光束可囚禁不同尺度的微粒,在生命科学和纳米科技中具有重要的意义.提出了一种利用普通球面透镜望远系统来变换局域空心光束尺寸的新方法.利用几何光学方法进行了分析,采用ZEMAX光学设计软件实现光线追迹进行模拟.实验中拍摄并测量了经望远系统变换前后的局域空心光束的尺寸.结果表明,局域空心光束尺寸的变换比等于...     

双包层掺杂光纤端面泵浦技术的研究

设计了一种基于准直聚焦透镜组的双包层掺杂光纤端面泵浦耦合系统,通过分析多模光纤耦合输出的泵浦光束参量经准直聚焦透镜光学系统后的变换特性,给出了能够满足泵浦光束与双包层掺杂光纤内包层模场分布匹配条件的透镜组参数及其位置参数设计要求,并利用结构参数与双包层掺杂光纤完全相同的未掺杂双包层光纤进行了耦合功率的实验测试,当泵浦源输出功率为50 W时,获得了34.1 W的入纤泵浦功率,泵浦耦合效率达到近70%,为搭建双包层光纤激光器奠定了基础.     

透镜焦距对局域空心光束尺寸的影响

基于衍射理论导出由轴棱锥和透镜系统产生的局域空心光束的光传输公式,模拟了其三维(3D)光强及截面光强分布图。由衍射理论和几何光学方法详细分析了聚焦透镜的焦距对局域空心光束尺寸的影响,即在相同条件下,局域空心光束的尺寸随着透镜焦距的增大而增大。实验得到当焦距分别为50 mm,70 mm以及100 mm时,局域空心光束的径向暗域尺寸为200μm,300μm以及430μm。理论计算、数值模拟与实验结果相吻合。     

梯度折射率光纤探针的光学特征参数

解析梯度折射率(GRIN)光纤探针的光学特征参数,用于光学相干层析技术(OCT)探头超小型化的研究。在概述由单模光纤、无芯光纤和GRIN光纤镜头构成的GRIN光纤探针模型的基础上,定义GRIN光纤探针的工作距离和聚焦光斑尺寸等光学特征参数,并用高斯光束复参数矩阵变换的方法推导探针光学特征参数的数学表达式,提出了探针光学特征参数的验证方法。结果显示,当无芯光纤和GRIN光纤镜头长度分别为0.48mm和0.17mm时,理论计算的工作距离和聚焦光斑尺寸分别为1.05mm和28.2μm;实验测得的工作距离和聚焦光斑尺寸分别为1.0mm和28μm。理论计算与实测结果吻合,验证了GRIN光纤探针光学特征参数及其解析方法的有效性。     

光束控制系统中热效应的数值模拟

编制了四维仿真程序,用以研究光束控制系统中的热效应对强激光传输的影响.作为数值模拟例,用Strehl比、可聚焦能力(即86.5%环围功率半径)、像散参数和光束重心偏移表征远场光束质量,研究了初始场分布为高斯和平顶分布的光束通过光束控制系统传输时热效应对远场光束质量的影响.结果表明,远场光束质量与初始场的空间分布有关,且随发射功率增大而变差.     

非傍轴矢量高斯光束

对傍轴近似下的光束传输变换问题进行了广泛的研究.但是,当光束有大的发散角或与波长相比拟的小光斑尺寸时,傍轴近似不再成立.已发展了多种非傍轴方法用以研究非傍轴光束的传输问题.对非傍轴光束的研究方法作了总结,使用角谱表示法和瑞利衍射积分公式对非傍轴矢量高斯光束的传输作了分析和比较.结果表明,基于瑞利衍射积分公式推导出的非傍轴矢量高斯光束在自由空间传输的解析公式在传输距离远大于波长时是严格的解析结果,并且在有光阑的情况下也是适用的.光束的非傍轴性主要由f参数决定,但当有光阑存在时,截断参数也对光束非傍轴行为产生影响.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.