纳米晶ZnS薄膜的制备方法及应用进展

纳米晶ZnS薄膜具有带隙宽度大、光学透过率高、介电常数低、化学稳定性好等特点,在透明导电膜、铜铟镓硒(CIGS)薄膜太阳能电池、发光器件、功能玻璃等领域表现出巨大的应用潜力。综述了纳米晶ZnS薄膜常用的制备方法,如磁控溅射法、化学浴沉积法、真空蒸发法和化学气相沉积法,同时还介绍了纳米晶ZnS薄膜的掺杂改性研究及其在相关领域的应用进展。     

CuInS_2/ZnS/ZnS量子点的制备与光电性能研究

首先以高温一锅煮法合成了CuInS_2核量子点,再通过连续和长时间的包覆ZnS外壳,制备出了量子产率高达76%的厚壳结构CuInS_2/ZnS/ZnS,将CuInS_2/ZnS/ZnS量子点作为发光层,利用简单的溶液处理法工艺成功制备出CuInS_2基量子点发光二极管(QLEDs)。同时对量子点的结构、形貌和光学性能及CuInS_2基QLEDs的光电性能进行表征和分析,研究结果表明,通过延长高温反应时间在CuInS_2核上包覆ZnS外壳,能够合成具有良好的光致发光性能的CuInS_2/ZnS/ZnS量子点,利用溶液法制备的CuInS_2基QLEDs开启电压值仅为2.5 V,并且其发光亮度能够达到5473 cd/m~2。CuInS_2/ZnS/ZnS的光致发光和电致发光性能都有了很大的提升。     

椭偏法研究硫化锌薄膜的中红外光学特性

采用电子束蒸发法在K9玻璃衬底上分别制备了设计厚度为115nm、467nm、652nm的硫化锌薄膜,分别记为A、B、C;采用椭偏法研究薄膜的光学特性。对薄膜A、B、C进行Brendel振予拟合,根据ZnS薄膜特性及成膜特点,建立模型“基底（K9玻璃）／有效介质层（50％K9玻璃及50％ZnS）／ZnS薄膜／表面粗糙层（...     

射频溅射法制取ZnS*Ag发光薄膜

用烧结ZnS·Ag蓝色荧光粉靶在钇铝柘榴石单晶基片上射频溅射制取了ZnS·Ag蓝色发光薄膜。讨论了基片温度及放电气体中H2 S的含量对薄膜发光特性的影响。实验表明 ,基片加热温度应控制在 50 0℃左右 ,放电气体中H2 S含量应控制在 0 2 %左右 ,所制得的薄膜具有和P2 2 B1荧光粉相同的发光光谱。     

ZnS薄膜的水浴法制备及其光学性能

以酒石酸和柠檬酸钠为络合剂,采用水浴法(CBD)制备ZnS薄膜.利用X射线衍射(XRD)、X射线能谱仪(EDAX)、扫描电镜(SEM)、紫外-可见分光光度计(UV-vis)研究ZnS薄膜的结构、成分、形貌及光学性能.利用透射光谱计算了ZnS薄膜的光学禁带宽度.结果表明:ZnS薄膜呈立方相晶体结构,水浴沉积时间为3h的ZnS薄膜原子比Zn∶S为1∶0.85,薄膜表面均一致密,在可见光区有着好的透射性能,在300～800 nm的光谱范围内平均透射率达到80.8%,光学禁带宽度为3.78eV,适合作为太阳能电池过渡层.     

CdSe胶质量子点的电致发光特性研究

采用胶体化学法合成硒化镉(CdSe)胶质量子点, 在此基础上制成了以CdSe胶质量子点为有源层, 结构为ITO/ZnS/CdSe/ZnS/Al的电致发光(EL)器件. 透射电镜测量表明量子点的尺寸为4.3 nm, 扫描电子显微镜测量ZnS薄膜和Al薄膜结果显示表面均较为平整, 由器件结构的X射线衍射分析观察到了CdSe(111)、ZnS(111)等晶面的衍射, 表明器件中包含了CdSe量子点和ZnS绝缘层材料. 光致发光谱表征胶质量子点的室温发光峰位于614 nm, 电致发光测量得到器件在室温下的发光波长位于450 ~ 850 nm, 峰值在800 nm附近. 本文对电致发光机制及其与光致发光谱的区别进行了讨论.     

TiO_2包覆ZnS荧光粉的制备及表征

采用溶胶-凝胶法成功在ZnS荧光粉表面包覆TiO2薄膜。通过透射电镜(TEM)、扫描电镜(SEM)、X射线衍射(XRD)、紫外可见吸收(UV-Vis)及荧光光谱(PL)对包覆前后荧光粉的结构和光学性能进行表征。结果表明:ZnS荧光粉表面包覆了一层厚度约5nm的TiO2薄膜,该薄膜整体连续性较好,分布较为均匀,且包覆过程对荧光粉的晶型及结晶度无影响,而包覆膜对ZnS的吸光度略有屏蔽且发光强度也有所降低。     

ZnS掺杂技术研究及应用现状

对现阶段国内外在ZnS及ZnS基材料掺杂改性方面的研究成果作一概述性介绍，综述了纳米级ZnS发光材料掺杂改性的基本机理，主要的掺杂技术、方法，并对多种掺杂元素的效果进行了分析比较。     

基于ZnS纳米材料的生物分子检测

利用三种发光波长的ZnS基纳米材料（ZnS、ZnS：Cu和ZnS：Mn）作为荧光标记物进行人免疫球蛋白（IgG）分子的免疫检测,X射线衍射（XRD）表明,过渡金属离子掺杂会导致ZnS纳米晶的结晶化尺寸减小;荧光光谱显示,ZnS、ZnS：Cu和ZnS：Mn纳米材料的发光波长分别为430nm、560nm和590nm。利用羊抗人IgG作为捕获抗体,分别制备免疫检测金基底和ZnS基荧光探针,分别进行空白实验、加入待测物人IgG实验,表明具有很好的检测选择性。     

ZnS：Ag^＋AC TFEL器件的制备及发光特性研究

通过对ZnS:Ag^ 薄膜电致发光（TFEL）器件的光学性质的研究，探讨了能获得稳定兰色发光的TFEL器件的制备及有利于ZnS:Ag^ 兰色发光的实验条件，同时讨论了光的干涉对ZnS:Ag^ TFEL光谱的影响，在实验中得到的ZnS:Ag^ TFEL光谱是包含几个隆起的宽带，通过计算证明这些隆起的出现与光的干涉有关。Ag^ 的浓度对ZnS:Ag^ TFEL器件的发光亮度和稳定性有显著的影响，Ag^ 浓度约为0.03mol%时，器件亮度较高，稳定性也较好，浓度再大时，亮度和稳定性较低，较高的电压有利于ZnS:Ag^ 兰色发光的提高，激发频率也存在一个最佳值。     

Determination of the impact excitation cross section for luminophor activators using voltage-luminance characteristics of thin-film electroluminescent structures

A new method is proposed for determining the parameters of emission centers in the luminophor layer of a ZnS-based thin-film electroluminescent display. The method was experimentally verified to yield correct values of the activator concentration and the impact excitation cross section. The results are compared to the data reported previously.     

无机薄膜电致发光研究进展

薄膜电致发光显示是平板显示的主要技术之一。文章在介绍了无机薄膜电致发光器件结构和工作原理的基础上，介绍了薄膜电致发光研究的一般方法，描述了无机薄膜电致发光的研究现状，分析了薄膜电致发光所面临的问题，重点探讨了解决蓝光问题的几种方案。蓝光亮度已能满足全色显示的要求，薄膜电致发光具有广阔的发展前景。     

薄膜型电致发蓝光材料的研究

通过对无机、有机薄膜型电致发蓝光材料的综述,表明在大面积平板显示方面,有机高分子薄膜型电致发蓝光材料具有独特的技术优势;纳米级电致发蓝光材料有着巨大的发展潜力.     

氮化铝薄膜发光性能研究进展

介绍了AlN薄膜物理性质及制备方法；综述了AlN薄膜作为薄膜电致发光（TFEL）器件发光层的研究现状；对AlN薄膜发光性能的应用前景做了展望。     

ZnS∶Mn~(2+)薄膜电致发光器件中电子散射过程的研究

研究了薄膜电致发光器件中的电子散射过程,计算了ＺｎＳ∶Ｍｎ２＋中声学声子、极化光学声子、电离杂质及谷间散射的几率随电子能量的变化关系,对各种散射过程进行了比较,发现极化光学声子散射及谷间散射较为重要,杂质散射的重要性取决于浓度的大小。同时研究了它们在不同能谷中的行为。进而研究了温度对散射过程的影响。     

ZnS：Mn薄膜电致发光器件中的电子能量

分析了电致发光的物理过程,讨论了用ＭｏｎｔｅＣａｒｌｏ方法研究电子加速过程的基本思路。在此基础上,研究了ＺｎＳ：Ｍｎ等膜电致发光器件中的电子 能量,得出了电子动能分布函数与时间,电动的关系及其在不同能人口 的特点。同时研究了电子的平均动能,平均势能与电场的关系。     

Thin film light amplifier with optical feedback

A thin film light amplifier with optical feedback was prepared as a system consisting of a photoconductive element and an electroluminescent cell. The dependence of the brightness of the electroluminescent cell on the intensities of illumination of the photoconductive element was measured for such a light amplifier with a sinusoidal voltage supply. The characteristics obtained were compared with those calculated using the proposed theoretical model.     

The characteristics of inorganic electroluminescent devices with an amorphous diamond film as cathode material

Diamond like carbon (DLC) thin films were used as the cathode layers of inorganic alternating current driven thick dielectric electroluminescent devices. The results indicated that electroluminescent (EL) devices with DLC cathode has superior brightness over the EL with Al or Cr-doped DLC cathodes. Cr-doping in DLC thin film can increase the electrical conductivity, but degrades the EL properties. Also, the EL device with DLC cathode possesses the lowest decay rate among various cathodes, because of the high thermal conductivity and the inert nature of DLC film.     

Comparative study of the crystal phase,crystallite size and microstrain in electroluminescent ZnS:Mn films grown by atomic layer epitaxy and electron beam evaporation

The crystallite size, the microstrain and their dependence on the thickness of the active layer in electroluminescent ZnS:Mn thin films were studied by X-ray diffraction line profile analysis. The average crystallite size in the films grown by atomic layer epitaxy (ALE) is about 100 nm, which is larger than that for films deposited by electron beam evaporation (EBE) by a factor of 5–10. In addition, the relative microstrain in the films prepared by EBE was about six times that in the films grown by ALE. The comparison is made using the average crystallite size values for both types of sample. Also the crystal phase and dislocation density were clearly different in the two types of the thin film. It is suggested that the large crystallite size and therefore the low density of crystallite boundaries are very probably causes of the observed increase in electroluminescent efficiency.     

Thin film light amplifier

A light amplifier was made from two separate thin film elements. The first of these elements, a photoconductive component, was a copper- and chlorine-doped CdS thin film evaporated under vacuum. The second was a thin film electroluminescent cell with a copper-, chlorine- and manganese-doped ZnS phosphor layer. The brightness B of the electroluminescent cell for various illumination levels L of the photoconductive layer was measured when the amplifier was excited with an alternating voltage of fixed amplitude and frequency. The results obtained experimentally showed fair agreement with the characteristics calculated from the proposed theoretical model.