热处理炉衬内涂敷SiC涂料的节能

利用SiC发射率高的原理 ,把自行研制成功的SiC涂料涂敷在热处理电炉、燃料炉炉衬内 ,经多年使用证明 :可使炉子升温速度缩短 2 / 5 ,节能约 8%。     

高发射率远红外涂料作用的探讨

本文阐明了高发射率远红外涂料作用的机理，同时还研究了“ＪＳ－１号”远红外涂料，用它涂覆在国产硬质９５号玻璃上制成的加热器，其节能效果超过乳白石英加热器，并且成本可大幅度降低。本涂料具有粘结牢固、不粉化、不脱落等优点。     

高发射率红外涂料进展

研制了高发射率红外涂料,2.5～25μm内其总发射率可达91％;在650℃的光谱发射率ε_λ=75～90％。其性能近似于灰体。将涂料与无机高温粘接剂混合涂在电阻加热炉的内壁上。在加热升温过程(250～1100℃)明显缩短时间,在4kW电炉上节时效率为25％左右,具有显著节能效果。     

优质高温红外涂料的研制与应用

研制了一类高温红外涂料,在2.5～5μm波段有很高的热发射率。分析了影响热发射率的若干因素,探讨了提高热发射率的机理。解决了涂料与金属基体的粘接问题,粘结力及热震击性能均达到了国际先进水平。用在高温电阻炉的电阻带及炉衬上,取得了优异的节能效果,此类涂料在低温场合,亦有广阔的应用前景。     

红外涂料的节能评估

讨论了红外辐射涂料的节能机制，分析了涂料对燃料加热炉排烟温度的影响及涂料与炉表温度的关系，并从理论和实践两方面评估了红外涂料的节能作用．     

一种在8—12μm波段高发射率涂料的研制

影响目标红外辐射亮度有两个因素：表面温度和发射率。运用涂料是改变发射率的一种简单可行的方法，使用不同发射率的涂料能够灵活有效地使目标热变形，达到隐身的目的。我们研制的一种高发射率涂料（ＦＨ９４－１型）由粘合剂、着色染料、填加剂配制而成。用红外光谱仪测得该涂料在８￣１２μｍ波段有较强吸收特性，这种吸收特性主要来自填加剂。使用ＡＧＥＭＡ９００热像仪，测得８￣１２μｍ波段法向平均发射率εｎ等于０．９２。     

一种在8—12μm波段高发射率涂料的研制

影响目标红外辐射亮度有两个因素：表面温度和发射率。运用涂料是改变发射率的一种简单可行的方法，使用不同发射率的涂料能够灵活有效地使目标热变形，达到隐身的目的。我们研制的一种高发射率涂料（ＦＨ９４－１型）由粘合剂、着色染料、填加剂配制而成。用红外光谱仪测得该涂料在８￣１２μｍ波段有较强吸收特性，这种吸收特性主要来自填加剂。使用ＡＧＥＭＡ９００热像仪，测得８￣１２μｍ波段法向平均发射率εｎ等于０．９２。     

红外涂料在金属发热体上的应用

红外涂料在金属发热体上的应用朱水平，韩仁，张理齐（武汉武钢钢铁研究所４３００８０）本文介绍了红外涂料在武钢硅钢连续退火炉上的应用，并就其对电阻带、辐射管等发热体提高热发射率、节能、延长使用寿命的作用进行了详细的阐述。红外涂料在金属发热体上的应用@朱水...     

粉体材料的法向光谱发射比测试系统的设计

阐述了采用“单光束比较辐射度量法”测量材料的法向光谱发射率的原理和系统设计 方法;改进、设计制作了黑体炉、样品炉、斩波装置、扫描装置和A/ D 转换系统,用V C + + 完成了“法向光谱发射比测试系统中文操作软件”的编写;利用此系统测量了涂料样品的法向光谱发射率。     

高发射率涂料的研究及应用现状

高发射率涂料是一类有着良好热辐射性能的涂料,是一类用途广泛的功能性材料.简单介绍高发射率耐热涂料的组成,分析影响涂层热辐射性能及耐热性能的一些因素,同时列举在国内外此类涂层一些应用情况.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.