二极管泵浦的高光束质量被动Q开关激光技术研究

研究了二极管端面泵浦及Cr4 ：YAG晶体作为被动Q开关对激光模式的影响，讨论了在一定条件下，二极管端面泵浦的被动Q开关激光器产生单纵模激光振荡的原因、机理和条件。在实验中，获得了单脉冲能量30μJ，脉宽6ns，重复频率2000Hz的单纵模激光输出。     

LD 泵浦高光束质量被动Q 开关激光技术研究

研究了二极管端面泵浦及Cr4 + ∶YAG晶体作为被动Q 开关对激光模式的影响,讨论了二极管端面泵浦的被动Q 开关激光器产生单纵模激光振荡的原因、机理和条件。在实验中,获得了单脉冲能量30μJ ,脉宽6ns ,重复频率2kHz 的单纵模激光输出。     

被动Q开关的微型DPL技术研究

被动Q开关是实现脉冲工作DPL微型化最有效的手段之一.文中介绍了Cr4+:YAG晶体被动Q开关激光器的基本原理,在实验中采用CW5W的LD端面泵浦的Nd:YAG/Cr4+:YAG激光器实现了重频高达5kHz、单脉冲能量40 μJ、脉冲宽度5.9 ns的稳定单纵模激光输出,并研制成微型化样机.     

LD泵浦的Cr~(4+)∶YAG/Nd∶YLF激光器

文中介绍的小型LD端面泵浦的Nd∶YLF激光器,采用Cr4 ∶YAG作为被动Q开关,在1-100Hz的重复频率下可以实现脉冲能量30～40μJ,脉宽4～5ns的1053nm的单纵模激光脉冲输出。     

LD泵浦的Cr4+:YAG/Nd:YLF激光器

文中介绍的小型LD端面泵浦的Nd：YLF激光器,采用Cr^4 ：YAG作为被动Q开关,在1—100Hz的重复频率下可以实现脉)中能量30—40μJ,脉宽4—5ns的1053nm的单纵模激光脉冲输出。     

LD 泵浦的Cr4 + ∶YAGPNd∶YLF 激光器

文中介绍的小型LD 端面泵浦的Nd∶YLF 激光器,采用Cr4 + ∶YAG作为被动Q 开关,在1 -100Hz 的重复频率下可以实现脉冲能量30～40μJ ,脉宽4～5ns 的1053nm 的单纵模激光脉冲输出。     

5kHz电光调Q LD端面泵浦Nd:YVO 紫外激光器

介绍了二极管连续激光器（LD）端面泵浦Nd:YVO4晶体，在200~5000Hz电光调Q的情况下激光输出的特性。当二极管输入电流10W，电光Q开关重复频率为1kHz时，355nm激光的平均输出功率为15mW，脉宽为20ns。并对实验结果进行了分析和讨论。     

LD泵浦5 kHz电光调Q的Nd:YVO4激光器

本文描述了连续二极管激光器(LD)端面泵浦Nd：YVO4晶体，在200～5000Hz电光调Q的情况下，激光输出特性的研究．当二极管输入电流在25A(约10W)，电光Q开关重复率为1kHz时，1064nm激光的平均输出功率为160mW，脉宽为20ns．并对实验结果进行了分析和讨论．     

GaAs被动调QYb：YAG激光输出动力学初步研究

利用材料可饱和吸收特性的被动调Q技术以其价格便宜和结构简单等优点在中小功率激光中被广泛应用．半导体材料GaAs具有明显的光学非线性，已用作Nd：YAG激光器的被动调Q开关。本文采用GaAs，既作为调Q元件，又作为输出耦合镜，成功地实现了二极管激光器泵浦Yb：YAG微片激光器的被动调Q运转，发现其被动调Q激光输出中     

5kHz电光调Q LD端面泵浦Nd:YVO4紫外激光器

介绍了二极管连续激光器(LD)端面泵浦Nd:YVO4晶体,在200～5000 Hz电光调Q的情况下激光输出的特性.当二极管输入电流10W,电光Q开关重复频率为1kHz时,355nm激光的平均输出功率为15mW,脉宽为20ns.并对实验结果进行了分析和讨论.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.