室温低下脉冲等离子体生长立方氮化硼薄膜

运用脉冲高能量密度等离子体，在室温下制成立方氮化硼薄膜，沉积薄膜的衬底材料分别选用单昌硅，氯化钠和ＧＣｒ１５轴承钢，用扫描电镜，透射电镜，红外吸收谱仪，扫描Ａｕｇｅｒ微探针等对沉积的薄膜进行了分析与测试，结果表明，氮化硼薄膜的结构及性质强烈地依赖于实验条件。     

立方氮化硼薄膜的形核与生长过程试验研究

采用离子束辅助沉积法在硅片上成功制备了一定立方相含量的氮化硼薄膜,采用各种现代分析方法对沉积的薄膜进行了表征分析,包括傅立叶红外光谱（FTIR）、X射线光电子能谱（XPS）和原子力显微镜（AFM）等分析方法;并利用FTIR结果系统研究了衬底的表面清洁度和辅助能量、辅助束流、辅助气体中氮气含量、温度以及离子原子到达比等参数对膜中立方氮化硼含量的影响.试验结果表明：立方氮化硼薄膜成核与生长的条件窗口比较窄,要获得高质量的立方氮化硼薄膜,各种镀膜参数的相互合理调整与匹配是必要的.     

立方氮化硼薄膜的制备与表征

在对国内外立方氮化硼薄膜的制备工艺及其表征方法进行了综述的基础上，分析了立方氮化硼膜制备中存在的问题，即薄膜的内应力高，结合强度低，沉积温度高，沉积速率低，沉积速率低，以及cBN中SP^3键含量不稳定。并提出了今后的研究方向：①cBN膜成核生长机理问题；②低温下大面积、高速生长的异质外延和定向生长问题；③膜基结合问题；④发展新的成膜技术，寻求无毒无污染的反应材料；⑤开发cBN膜的应用。     

立方氮化硼单晶——金刚石薄膜异质P—N结

本文在Ｓｉ掺杂Ｎ型片状立方氮化硼单晶（１１１）面上利用热灯丝化学汽相沉积方法生长了掺Ｂ的Ｐ型金刚石薄膜，从而制得了立方氮化硼单晶－金刚石薄膜异质Ｐ－Ｎ结，测试了该Ｐ－Ｎ结的Ｖ－Ａ特性，结果表明其整流特性良好。     

Effects of Deposition Temperature on the Structure and Hardness of BN Films Prepared by a Gradient Temperature Method

采用温度梯度法,通过MW-ECR射频磁控溅射在硅片基底上制备了六方和立方混合的氮化硼薄膜。研究了薄膜的键结构,化学成分和力学性能。结果显示,对于氮化硼立方相的出现存在温度阈值,薄膜的硬度随沉积温度提高而提高。相对于传统薄膜制备方法,温度梯度方法具有更高的效率。     

沉积温度对温度梯度法制备氮化硼薄膜结构和硬度的影响（英文）

采用温度梯度法,通过MW-ECR射频磁控溅射在硅片基底上制备了六方和立方混合的氮化硼薄膜。研究了薄膜的键结构,化学成分和力学性能。结果显示,对于氮化硼立方相的出现存在温度阈值,薄膜的硬度随沉积温度提高而提高。相对于传统薄膜制备方法,温度梯度方法具有更高的效率。     

气相沉积立方氮化硼薄膜的研究与发展状况

简述了立方氮化硼的优异性能，国内外研究立方氮化硼薄膜的历史，现状，应用前景及存在的问题。     

化学气相沉积金刚石薄膜衬底的研究进展

讨论了化学气相沉积金刚石薄膜的各种衬底材料。气相合成金刚石衬底材料分为3类，第一类是能和碳形成碳化物的衬底；第2类是与碳不起反应（不形成碳化物）但能溶碳的衬底；第3类是既不与碳反应又不熔碳的衬底。第一种一般与金刚石薄膜有比较好的粘合性，后两种虽然使金刚石成核容易，但衬底材料与金刚石薄膜结合性较差。采用预处理是促进化学气相沉积金刚石薄膜与增强结合力非常有效的方法。     

立方氮化硼薄膜及溅射沉积的研究进展

溅射沉积由于获得的cBN薄膜颗粒尺寸小、立方相含量高,是cBN薄膜制备技术发展的一个重要方向。本文介绍了溅射沉积过程中的基体负偏压、沉积气氛、沉积温度、靶材功率等工艺参数对cBN薄膜中立方相的含量和薄膜性能的影响规律。并从优化沉积工艺参数、采用过渡层及在膜层中引入其它元素方面介绍了在降低膜层应力方面取得的研究进展。分析归纳出溅射沉积cBN薄膜目前存在的主要问题是薄膜应力过大、存在非立方相氮化硼及B、N原子的比例失配。提出了下一步研究工作的重点是通过深入认识溅射沉积cBN薄膜的的形成机理,优化沉积工艺参数及设计合理的过渡层和新型梯度涂层,以提高立方相的含量、保证B、N原子的比例、降低膜层应力。     

CVD技术在超硬涂层制备中的应用

类金刚石薄膜、金刚石薄膜、立方氮化硼薄膜等是近年来超硬涂层材料研究中引人注目的三种功能型薄膜材料，它们在机械、电子、光学等领域有着可观的应用前景，而这三种超硬薄膜的制备，ＣＶＤ技术起着至关重要的作用。本文简要评述了ＣＶＤ技术在近年超硬涂层发展中的应用。     

Process diagnostics during the deposition of cubic boron nitride

Using spatially resolved optical emission spectroscopy and Langmuir double probe technique, the magnetron deposition process of cubic boron nitride thin films has been investigated. The ion current to the r.f-biased susbstrate electrode was estimated by means of Bohm's sheath criterion. In order to deposit the cubic boron nitride phase, a much higher ion energy is required in the d.c. magnetron in comparison to the r.f. sputtering magnetron mode at usually applied target power. Furthermore, there is a significant phase inhomogeneity across the substrate holder. Both facts have been explained in terms of the total momentum per deposited boron atom. The plasma excitation degree (vibrational and excitation temperatures) determined by emission spectroscopy was found to be higher in the r.f. sputtering mode. It has been shown that both in situ techniques applied can supply reliable information on the reactive magnetron deposition process.     

直流和高功率磁控溅射制备氮化铬薄膜及其结构性能比较

目的 比较直流磁控溅射（DCMS）和高功率磁控溅射（HiPIMS）两种沉积技术制备的氮化铬（CrN）薄膜的结构和性能。方法 采用DCMS和HiPIMS沉积技术,在金属镍（Ni）基底上沉积CrN薄膜,采用X射线衍射（XRD）、扫描电镜（SEM）和显微硬度计等仪器,分析CrN薄膜的晶相结构、表面以及截面形貌、基底与薄膜复合硬度、摩擦性能等。结果 XRD晶体测量显示DCMS制备的CrN薄膜在(111)晶面择优生长,内应力大;而HiPIMS制备的CrN薄膜为(200)晶面择优生长,内应力小。SEM显示两种方法制备的CrN薄膜都呈柱状晶体结构生长,但HiPIMS沉积的CrN薄膜颗粒尺寸较小,柱状晶体结构和晶粒更致密。硬度测量得到HiPIMS制备的CrN薄膜显微硬度为855.9HV,而DCMS制备的CrN薄膜显微硬度为501.5HV。此外,DCMS制备的CrN薄膜平均摩擦系数为0.640,而HiPIMS制备的CrN薄膜摩擦系数为0.545,耐磨性也好。HiPIMS制备的CrN薄膜的腐蚀电流比DCMS制备的CrN薄膜低1个数量级。结论 HiPIMS沉积技术制备的CrN薄膜颗粒尺寸小,结构更致密,且缺陷少、硬度高、防腐蚀性好,薄膜各项指标都优于DCMS沉积的CrN薄膜。     

Room-temperature growth of high-purity titanium nitride by laser ablation of titanium in a nitrogen atmosphere

Thin films of titanium nitride (TiN) were deposited on glass substrates by KrF excimer laser ablation of titanium over a very broad nitrogen pressure range with different target–substrate distances at room temperature. The as-deposited TiN thin films were analyzed by X-ray diffraction and transmission electron microscopy. It was found that the as-deposited thin films are normally a mixture of TiN and metallic titanium, and the TiN-to-Ti ratio of the as-deposited thin film depends on both the nitrogen pressure and the target–substrate distance. High-purity TiN thin films can be obtained only in a very narrow deposition parameter range. A compound parameter (the product of the nitrogen pressure and the target–substrate distance) is proposed to optimize the deposition of high-purity TiN thin films, and the possible mechanism is also discussed. It was also revealed that the as-deposited TiN thin films are polycrystalline with an average grain size of about 20 nm.     

碳化硼薄膜的电子束蒸发制备及表面分析

采用电子束蒸发技术制备碳化硼薄膜,利用X射线衍射(XRD)分析了薄膜的结构,测量了薄膜的X射线光电子能谱(XPS),并利用原子力显微镜(AFM)对薄膜进行表面分析.XRD结果表明:薄膜的结晶性随着衬底温度的升高逐渐转好,在较低的衬底温度下制备出多晶碳化硼薄膜.XPS分析得到了碳化硼薄膜表面的化学成分和结构特性,其主要成分为B_4C.AFM结果表明,薄膜表面光滑平整、均匀致密,随着衬底温度的升高薄膜均方根(RMS)粗糙度逐渐增大.     

N2流量比对复合磁控溅射Zr-B-N薄膜结构和性能的影响

目的 在反应沉积时补充金属离子,增加薄膜中金属氮化物硬质相的数量,优化复合磁控溅射Zr-B-N薄膜的制备工艺,揭示N2流量比（N2/(N2+Ar)）对Zr-B-N薄膜结构和性能的影响规律,进一步强化Zr-B-N纳米复合薄膜。方法 采用高功率脉冲磁控溅射和脉冲直流磁控溅射复合镀膜技术沉积Zr-B-N薄膜,借助X射线衍射仪、能谱仪、扫描电镜、纳米压痕仪、划痕测试仪和摩擦试验机,研究N2流量比对Zr-B-N薄膜成分、微观结构、力学性能和摩擦性能的影响。结果 Zr-B-N薄膜具有典型的纳米复合结构,即BN非晶层包裹着ZrB2、Zr3N4、Zr2N、ZrN等纳米晶,所有Zr-B-N薄膜均沿（100）晶面择优生长。随着N2流量的增加,（100）晶面的衍射峰宽化加剧;薄膜硬度由36.2 GPa下降到21.0 GPa;膜/基结合力逐渐增强,临界载荷从34.8 N增加到55.8 N;摩擦系数逐渐增大。当N2流量比为42.9%时,摩擦系数相对较低,约为0.48,归因于薄膜内形成了沿（220）晶面生长的ZrN相,从而起到了良好的减摩作用。结论 当N2流量比为42.9%时,Zr-B-N薄膜具有纳米复合结构和良好的各项性能。     

Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) — N₂ (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.     

High purity boron nitride thin films prepared by the PDCs route

Hexagonal boron nitride (h-BN) thin films (< 10 μm) were successfully obtained on various substrates (graphite-standard and HOPG, quartz and SiC) using the preceramic polymer route. Thin films were formed using precursor solutions of poly(2,4,6-trimethylamino)borazine (polyMAB) as a source of BN. Various preparation conditions were used (i.e. solvent, precursor nature and concentration, substrate and deposition method) and their impact on final BN film quality measured. Surface morphology was observed by Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM). Presence of BN material was confirmed by infrared and Raman spectroscopies and the structure observed by High Resolution Transmission Electronic Microscopy (HRTEM). The chemical composition of samples analyzed by X-ray Photoelectron Spectroscopy (XPS) gives a B/N ratio close to 1. Boron nitride films were also prepared using borazine (B₃N₃H₆) as precursor. Initial results are presented and compared with those obtained from polyMAB solutions.     

氮化铀薄膜的制备及性能研究

开展了氮化铀薄膜射频制备及薄膜性能研究,通过优化氮化铀薄膜的制备工艺条件,成功在Si基片上制备了氮化铀薄膜,并利用扫描电镜、原子力显微镜、X射线电子衍射、俄歇电子能谱仪和X射线光电子能谱对氮化铀薄膜进行了表面形貌和结构组分分析。结果表明:利用射频磁控沉积法制备的氮化铀薄膜为比较平整和致密的U2N3和UNxOy的混合相组成,具有一定的抗氧化腐蚀性能。     

Influence of boron contents on properties of AlMgB films prepared by RF magnetron sputtering

Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and one boron target. The thickness of the as-deposited thin film was controlled to 500 nm by adjusting deposition time. The influences of sputtering powers on the elemental contents and structural and mechanical properties were investigated by electron probe microanalysis (EPMA), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), and nanoindentation system. At the same time, the ball-on-disk tribometer was used to measure the friction behavior of the films. Experimental results indicate that the as-deposited boron-rich films are primarily amorphous structure and possess a dramatic high hardness up to 39 GPa with 99. 03 at. ％ boron. Obviously, it has exceeded the hardness value of 32 GPa of pure AlMgB14 bulk material prepared by sintering method. Furthermore, the friction coefficients of the thin films exhibit an average value as low as 0. 3, which is considered as the effect of self-lubricating.     

工艺参数对电子浴辅助阴极电弧源法合成AIN薄膜的影响

介绍了一种应用电子浴辅助阴极电弧源法合成AIN薄膜的新方法。研究了N2流量、阴极偏压、工作气压等工艺参数对合成AIN薄膜质量的影响规律,结果表明,随N2流量的增加,AIN薄膜的质量得以提高,当N2流量达到30mL.min^-1时,可合成较纯净的AIN薄膜;阴极偏压主要影响合成薄膜的结晶状况;此外,基体材料本身及其表面状况也对合成薄膜的质量有一定影响。