基于PXA320嵌入式手持终端电源管理系统的设计

针对目前工业用手持设备要求长时间工作的特点,提出基于PXA320嵌入式手持终端电源管理系统的低功耗设计方案。首先分析核心处理器PXA320电源管理的各种工作模式,该核心处理器采用Intel SpeedStep技术能够使电池的续航能力得到提高;然后采用智能电源管理芯片LP3972设计了系统电源管理模块,该模块通过IIC总线与核心处理器PXA320通信,然后通过软件设计实现PXA320对电源管理模块为系统各工作模块的输出电压值的合理调节,最终达到降低手持设备功耗的目的。经测试表明,系统稳定可靠,达到系统设计要求。     

基于PXA320嵌入式手持终端电源管理的设计

针对目前工业用手持设备要求长时间工作的特点,提出基于PXA320嵌入式手持终端电源管理系统的低功耗设计方案。首先分析核心处理器PXA320电源管理的各种工作模式,该核心处理器采用Intel SpeedStep技术能够使电池的续航能力得到提高;然后采用智能电源管理芯片LP3972设计了系统电源管理模块,该模块通过IIC总线与核心处理器PXA320通信,然后通过软件设计实现PXA320对电源管理模块为系统各工作模块的输出电压值的合理调节,最终达到降低手持设备功耗的目的。经实验测试表明,系统在实验测试阶段可稳定运行。     

IDT推出创新的电源管理解决方案

IDT公司（IntegratedDeviceTechnology,Inc．）Et前宣布,开发并验证了一款智能的、可扩展的分布式电源管理解决方案,应用于英特尔@凌动删处理器、英特尔@至强TM处理器和英特尔@酷睿删处理器。IDT创新的电源管理解决方案用单个电源管理Ic（PMIC）满足各种基于英特尔处理器应用的跨平台电源要求。     

新型IHLP超薄大电流电感器

德州仪器（TI）推出三款全面集成型电源管理与信号链配套器件,可支持基于OMAP35x处理器设计的所有系统电源要求,从而壮大了针对嵌入式处理器设计的电源管理产品阵营。通过将领先电源管理电路与TI低功耗嵌入式处理器进行完美结合,可实现最佳电源效率与性能,从而可延长电池使用寿命及系统运行时间。     

美国国家半导体的电源管理产品

据2005年1月11日中国讯一美国国家半导体公司(National Semiconductor Corporation)宣布推出一款可为先进的应用及通信处理器提供稳定供电的电源管理产品。这是该公司全新推出的多功能电源管理芯片系列的首款产品，具有可编程的灵活性，可为采用ARM技术的应用及通信处理器-_包括英特尔(Intel)的XScale处理器一提供稳定的供电。     

智能电子设备促进定制化电源管理芯片PMIC

用户定制化电源管理芯片(PMIC)越来越热门。移动设备功能日益复杂,使得电源管理设计更为棘手;为克服此一问题,愈来愈多手机应用处理器开发商开始与电源芯片业者携手合作,为处理器打造量身订做的专属电源管理方案。     

POL电源设计技术和参考设计

处理器技术的发展 由于更高的集成度、更快的处理器运行速度以及更小的特征尺寸,内核及I／O电压的负载点（POL）处理器电源设计变得越来越具挑战性。处理器技术的发展必须和P0L电源设计技术相匹配。5年或10年以前使用的电源管     

国半推出先进电源控制器（APC）

日前，美国国家半导体公司宣布推出一款技术水平领先同业的先进电源控制器(APC)，这款采用PowerWise^TM技术的先进电源控制器集成了美国国家半导体的高效率电源管理电路及ARM公司的智能能源管理技术，其优点是可以减少处理器核心的功耗达75％。     

国半推出支Intel Xscale处理器的电源管理芯片

美国国家半导体公司（National Semiconductor Corporation,简称国半）日前宣布推出一款可为先进应用及通信处理器提供稳定供电的电源管理产品——LP3970FlexPMU。该产品具有可编程灵活性，可为采用ARM技术的应用及通信 处理器——包括Intel XScale处理器——提供稳定的供电。     

新品

电源器件PHILIPS推出支持INTEL XSCALE处理器的电源管理芯片PCF50626PHILIPS公司宣布推出最新电源管理单元(PMU)PCF50626。通过对PCF50626PMU的应用设计可满足移动设备多媒体应用很高的电源管理需求。它能够支持Intel公司基于第三代Intel XScale!的最新处理器系列(代码名为Monahans)并为之增添功能。这亦是PHILIPS支持Intel XScale系列移动应用处理器的第二代PMU。PHILIPS开发的PCF50626是新一代的单芯片电源管理单元,它有一个即时的软件控制机制,能将多功能手机、VoIP电话、移动游戏和音乐设备以及无线PDA的…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.