阀控铅酸蓄电池的寿命及容量实验讨论

蓄电池是一种化学电源,它的构造是各种各样的,所有的电池都是由正极、负极、电解质、隔离物和容器组成的,其中正负两极的活性物质和电解质起化学反应,对电池产生电流起着主导作用。阀控铅酸蓄电池与普通开口式防酸或防酸式铅酸电池相比具有许多优点：它勿需初充电,一般为贫液式结构;它采用密封制作,在使用过程中较少产生酸雾,可与其他型号电池同处一室,对其他通信设备不会腐蚀;该电池结构紧凑,容量高,可积木式安装,自放电很小。     

LLZTO涂覆天丝无纺布锂离子电池隔膜的制备

针对锂离子电池用无纺布隔膜孔径分布不均的问题,采用原纤化天丝纤维制备湿法无纺布基材,结合氧化物固态电解质涂层,在收窄孔径尺寸及区间分布的同时,降低电池内阻,提升电化学性能。固态电解质涂层搭配低转数无纺布隔膜会导致基材侧渗出大量陶瓷,但对于组装后电池循环及倍率测试无影响。涂覆之后的无纺布隔膜(LC10)组装钴酸锂全电池循环后拥有较低的极化电压,且由于拥有较高的离子迁移数及更低的欧姆电阻和电荷转移电阻,其在3C高倍率循环下的容量保持率可达85.93%。未涂覆固态电解质涂层的无纺布隔膜低温性能差于商品样,低温镀锂情况较商品样更加严重,而LC10低温下的初始比容量可达124.9 mAh/g,容量保留率为94.23%。     

“383Windows”电解质自支撑新构型固体氧化物燃料电池的设计与制备

固体氧化物燃料电池的主要构型有电解质自支撑型与电极支撑型两种,然而这两种构型都存在明显的缺点。前者需要电解质层较厚,导致电池的欧姆阻抗较高,输出功率较低;后者的氧化还原稳定性较差,容易开裂、损坏,导致电池单体开路电压下降甚至完全失效。以氧化钇稳定的氧化锆电解质材料为例成功制备了“383Windows”构型电解质自支撑固体氧化物燃料电池,电解质层间结合紧密,结构稳定,具有优异的力学性能,在保证机械强度的前提下将电解质功能层的厚度成功降低到100μm以下。与同等厚度的厚膜电池相比,在800℃时“383Windows”构型电池的总欧姆阻抗降低了46.7%,输出性能得到了大幅度提高(最大功率密度提升了63.4%)。该结构易于拓展应用到其他电解质体系中制备固体氧化物燃料电池、固体氧化物电解池及全固态锂离子动力电池等,具有很好的商业化前景。     

INFLU面罩

H1N1流感一直没有离去,戴面罩似乎已成了司空见惯的事情·从最普通的医用款式，发展到时下许多年轻人所佩戴的卡通时尚款式。而今天这个INFLU与我们通常所见的面罩不同·在它的口鼻位置带有一个靠电池驱动的小型电动换气阚·可以过滤空气中的病毒·以便更好地保护呼吸系统。     

基于COMSOL 模拟的铅酸电池自放电机理研究

铅酸电池凭借其自身优势,在能源结构多元化的当下,一直是能源领域的研究焦点。针对自放电对铅酸电池带来的容量衰减问题,基于传质、电荷、化学反应及动力学方程,提出考虑了自放电效应的铅酸电池一维瞬态仿真模型,研究了不同工况下电池电压随时间的变化,以及荷电状态和电解质浓度的空间分布情况。结果表明:自放电效应带来的电压下降会随着时间的延长逐渐减缓,且正极的自放电速率大于负极;高电密下电极内部将出现较为严重的电解质浓度和荷电状态不均现象,将加剧电池的失效。     

一种新型的锂离子电池负极材料

在固相合成的Li4Ti5O12中添加SnO2进行改性。用循环伏安、交流阻抗谱、恒流充放电技术研究了SnO2的添加对材料的电化学性能影响。试验显示,材料改性后,当以金属锂为对电极时,首次放电容量达400.02mAh·g–1,首次库仑效率为50%;当以LiCoO2为对电极时,首次放电容量为166.27mAh·g–1,经过15次循环后,容量衰减仅为3.3%。改性后的电极材料不但提高了容量,而且能够保持原有材料的高循环性能,可用作锂离子电池的负极材料。     

不同隔膜对快充型三元锂离子电池性能的影响

隔膜是锂离子电池的重要组成部分,对其性能起着重要影响。通过研究聚对苯二甲酸乙二酯(PET)、纤维素、芳纶、聚丙烯(PP)和聚丙烯/聚乙烯/聚丙烯(PP/PE/PP)隔膜对锂镍钴锰酸锂(NCM)为正极,石墨为负极的快充型锂离子电池性能的影响。结果表明,采用纤维素隔膜的锂离子电池的综合性能最好,10C的高倍率下容量为144 mAh·g~(-1),容量保持率高达95.6%,5C倍率循环500次后的容量没有衰减。采用PET和PP隔膜电池性能也较理想。而采用PP/PE/PP隔膜电池在高倍率下容量快速衰减。由于其低的透气度和内阻以及高的电解液浸润性和吸液率,纤维素隔膜显著提升了三元锂离子电池的倍率性能和循环寿命。     

简讯

能量新源泉　索尼发布新款锂离子电池　　SONY公司日前发布了旗下几款新型的锂离子电池产品 ,这些电池达到了目前工业级最高的容量密度 ,可为各种数码产品提供更长的工作时间保障。圆柱形电池的规格与我们常用的电池规格相同 ,它高 6 2mm、直径为 18mm ,具有可冲 /放电的特性。这款电池容量较大 ,达到了 2 5 5 0mAh。相信它可以为类似DC、DV等耗电大户提供更持久的电能。摘自http :/ /www .c114 .net产综研新型电解质　锂电池将更安全日本产业技术综合研究所开发出了用于锂离子充电电池的阻燃型电解质。由于不易挥发 ,即使温度接近 +3 0…     

锂氧电池复合电解质电化学性能研究

将LiPF_6溶入EC/EMC/DMC作为锂氧电池电解质主体,并分别加入[Emim]BF_4和[DEME]TFSI离子液体制成复合电解质材料,组装成锂氧电池。通过循环伏安、交流阻抗、恒流充放电等方式研究复合电解质的电化学性能。结果表明,LiPF_6溶入EC/EMC/DMC-[Emim]BF_4体系复合电解质表现出较优的电化学性能,在0.025×10~(–3)A·cm~(–2)电流密度下电池首次放电比容量为2 672×10~(–3)Ah·g~(–1),能量密度达6.468×10~(–3) Wh·cm~(–2)。     

表面处理对低成本多晶硅太阳电池性能的影响

通过沉积SiNx薄膜和H2退火表面处理工艺对低成本多晶硅太阳电池进行了处理,对表面处理前后的电池效率进行了对比测试,详细地研究了这两种表面处理工艺对电池的短路电流、开路电压、填充因子和转换效率的影响。实验发现,沉积了SiNx薄膜的低成本多晶硅太阳电池的效率在原有基础上提高了1.8%左右;而经过H2退火后的电池效率则出现了效率衰减。与此同时,对成本相对高的太阳能级多晶硅电池也进行了H2退火,与低成本多晶硅电池相比,其效率增加明显,与低成本太阳电池呈现了相反的现象。最后分析了两种表面处理工艺对电池性能造成影响的原因。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.