平板电视能效与调光信号的对应关系

本文介绍了平板电视新能效的标准执行后,在电视机应用时,如何保证在电视机个性指标的前提下获得更高的能效指数,通过数据对比,总结出如何设定出厂设计,如何设定用户模式的自我调整。并通过对直下式液晶模组的测试,结合LED的不同电流下发光效率,给出具体的调光信号设定方案。     

视频无线发射器

本文介绍一种视频无线发射器,可将视频信号调制在UHF频段的设定频道上进行无线发射,方便普通电视机接收。如果VCD机、摄像机输出的视频信号经射频转发后,可以在家中任意一台电视机上接收,而不必用电缆连接电视机,避免长线传输的缺点。如果接入简易摄像头,连同发射器安装在大门口,不必走到门口即可看清来访者。该发射器的优点是无连线,家庭摄像时可随时在电视机上观察拍摄效果。     

让画面更精彩!——怎样调校电视机

我们从家电商场买来电视机,把电视机从包装箱拿出来之后,还需要对电视机的默认设置进行一定的调整。为了调校电视机的设置,我们最好能够准备一张Digital Video Essentials之类的专用测试DVD。经过调整后,电视机的显示效果会比调整之前好很多。刚拿到手的电视机的所有参数设定都是出厂时的默认设置——对比度、亮度、饱和度、色调等参数在出厂时往往都被设置成最高,整个电视机的画面会显得过于明亮,而且偏蓝,这样的设置不仅无法实现最精确的颜色还原,还因为亮度和对比度过高,长时间使用很容易给电视机带来永久性的损坏,尤其是PDP等离子电视机和CRT显像管电视机。除了对比度、亮度等几项用户可以调整的常见设置外,现在电视机通常还会有色温设置功能。色温设置里面一般都有高色温、中色温、低色温(有些会标称为冷色温、中色温和暖色温)等几个预置的选项供我们选择。通过这几个预置选项,我们可以对电视机的色温进行粗调,有些电视机甚至还可以让你自己设定具体的色温参数数值。电视机的出厂设置通常都是调整到高色温,这样电视机的显示效果通常都会偏蓝。另外一个比较重要的设置项就是我们通常所说的图像模式。通常电影和标准模式的显示效果是最准确的,在我们开始对电视机的其他设置进行调整之前,最好把图像模式调到电影或者标准模式。如果你的电视机还有色温设置的话,把它调到中色温或者低色温模式,然后用一些黑白画面来测试一下,如果在低色温模式下画面偏红的话,那就应该采用中色温模式(6500K)     

北京牌“8329”型彩电真实频道的设定

北京牌8329型彩色电视机具有频率合成调谐系统,因而可直接设定接收频道,但随机的“使用说明书”却未作介绍。笔者通过实践找到了真实频道的设定方法。按下PRES/NORM键,使电视机处于预置状态。这时可见屏幕右下角CH××绿色字符。按本机音量增( ),其个位数由0、1、2、……9、A递变;按音量减(-),十位数由1、2……9、V递变。     

打造个性化电视 三星智能电视机 UA46D7000LJ不忽悠

智能电视机的成败关键在于应用,这也是很多智能电视机难以得到消费者认可的原因。三星在这一点上没有忽悠,而是一心一意在应用上做起了文章,其智能电视机UA46D7000LJ的智能应用中     

特告警装置的断电定时器

这是一只低价的晶体管定时器电路，可以在设定时间内自动切断电视机等家用电器，并同时发出声光告警。电源供给电压为12V，电流300mA。     

智能手机用作电视机遥控器的设计

文章讨论了用Wi-Fi转TTL电路替代电视机红外接收电路,在智能手机中增加Wi-Fi控制电视机的应用程序,使电视机具有被智能手机Wi-Fi控制的功能。文中给出了Wi-Fi转TTL的电路,智能手机应用程序设计方法和程序框图。本文还讨论了智能手机通过Wi-Fi对家中多台电视机遥控的方法,以及如何应对空中一般性的电磁干扰,为减少家庭中红外遥控器的种类和数量提供了一种方法。     

帮您解惑：详细解析高清标清电视机主要技术指标及如何选购高清电视机

详细解释了数字电视机的各项技术指标的含义,通过实例告诉您如何根据自己的需要选择适合自己的等离子或液晶高清电视机。     

利用自适应理论对电视机语音控制系统建模

电视机语音控制系统的建立是为了将语音识别技术推向实际应用的一个研究项目.首先介绍电视机语音控制系统,接着给出自适应滤波器的介绍以及应用范围.主要采用回声抵消理论,并最终结合电视机语言控制系统得到电视机语音控制系统的模型.选取的实际模型具有很好的应用价值,给出了自适应滤波器在实际应用中的具体实例,对于推动语音识别技术走向实用化是十分有意义的研究方向.     

如何在有线电视台建立图文台

如何在有线电视台建立图文台应用与实践广电部广播科学研究院文靖袁敏图文电视（Ｔｅｌｅｔｅｘｔ）是一种利用电视场逆程（ＶＢＩ）进行多工数据传输的技术，它将电视机这一普及率最高的信息媒体发展成了除能收看电视节目，还可获得信息的工具，使电视机有了新的用途和内...     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.