Na0.5Bi0.5TiO3-BaTiO3陶瓷的介电和压电性能研究

研究了Ｎａ_０．５Ｂｉ_０．５ＴｉＯ_３和（Ｎａ_０．５Ｂｉ_０．５）_０．９４Ｂａ_０．０６ＴｉＯ_３陶瓷的电滞回线、压电性能和热滞现象·得到（Ｎａ_０．５Ｂｉ_０．５）_０．９４Ｂａ_０．０６ＴｉＯ_３陶瓷的剩余极化Ｐ_ｒ＝１９ｕＣ／ｃｍ^２、矫顽场Ｅ_ｃ＝４．７ｋＶ／ｍｍ．发现用适量的Ｂａ^２＋取代（Ｎａ_０．５Ｂｉ_０．５）^２＋尽管压电性能有所提高,但同时使得材料的温度稳定性大大降低．     

CaO-Y2O3添加剂对AlN陶瓷显微结构及性能的影响

研究了掺杂ＣａＯ－Ｙ_２Ｏ_３热压烧结和常压烧结ＡｌＮ陶瓷的性能和显微结构．结果表明：热压烧结ＡｌＮ陶瓷的第二相为Ｙ_３Ａｌ_５Ｏ_１２,常压烧结ＡｌＮ陶瓷的第二相为Ｙ_３Ａｌ_５Ｏ_１2和Ｃａ_３Ｙ_２Ｏ_６;热压烧结ＡｌＮ的第二相体积百分数和晶格氧含量均低于常压烧结;热压烧结ＡｌＮ陶瓷的微观结构良好,其热导率达到２００Ｗ／ｍ·Ｋ．     

(Ni0.81Fe0.19)0.66Cr0.34/Ni0.81Fe0.19薄膜的各向异性磁电阻效应及尺寸效应

研究了以非磁性（Ｎｉ_０．８１Ｆｅ_０．１９）_０．６６ＣＲ_０．３４薄膜作为过诞层的坡莫合金Ｎｉ_０．８１Ｆｅ_０．１９薄膜的磁电阻效应和饱和磁场,分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应,并建立一个统计模型定性分析了其性能变化的机理,计算结果符合实验．     

铬掺杂对PZT-PMN陶瓷材料性能的影响

采用ＴＥＭ、ＳＥＭ、ＥＳＲ（电子自旋共振）结合常规压电性能测试手段研究了Ｃｒ_２Ｏ_３掺杂对ＰＺＴ－ＰＭＮ陶瓷的压电性能、微结构及畴态的影响．压电性能测试结果表明,当Ｃｒ_２Ｏ_３含量低于０．０６Ｗｔ％时,可使Ｋ_ｐ和Ｑ_ｍ同时提高,这说明铬掺杂同时兼具“软掺杂”与“硬掺杂”的双重特性．此外,还发现随着烧结温度的提高,材料性能“硬化”明显．ＥＳＲ谱分析表明,Ｃｒ离子主要以Ｃｒ^３＋和 Ｃｒ^５＋的方式共存,随着烧结温度的提高,它有从高价态 Ｃｒ^５＋或Ｃｒ^６＋向低价态转变的趋势,这一价态变化被认为是材料性能随烧结温度提高而“变硬”的主要原因之一．ＴＥＭ图片显示,随着掺杂的Ｃｒ_２Ｏ_３的浓度的增大,由于氧空位或受主离子与氧空位构成的缺陷复合体对畴壁的钉扎,电畴将从正规带状畴向波纹状畴转变．     

高Tc铋层状压电陶瓷结构与性能

综述了铋层状压电陶瓷的结构特点及性能研究．铋层状压电陶瓷的结构由（Ｂｉ_２Ｏ_２）^２＋层和钙钛矿层（Ａ_ｍ－１Ｂ_ｍＯ_３ｍ＋１）^２－按一定规则共生排列而成．此处 Ａ为适合干 １２配位的离子;Ｂ为适合于八面体配位的离子,ｍ为一整数,其值一般为１～５．与钛酸钡（ＢａＴｉＯ_３）或锆钛酸铅（ＰＺＴ）陶瓷相比,铋层状压电陶瓷具有以下特点：低介电常数、高Ｔ_ｃ、机电耦合系数各向异性明显、低老化率、高电阻率等． 先前研究证明,居里温度不仅与极化原子位移、自发极化强度、Ａ位Ｂｉ含量有关,而且还与取代离子的特性诸如离子半径、电负性、核外电子排布有关．压电活性低是铋层状陶瓷的本质缺点,通常发展该材料的途径为化学取代或晶粒取向技术．研究材料结构与性能之间的关系有助于发展铋层状压电陶瓷材料．     

复合稀土掺杂α-Sialon的氧化行为

对组份为（Ｎｄ_０．１８Ｙ_０．１８）Ｓｉ_{１０．３８}Ａｌ_１．６２Ｏ_０．５４Ｎ１_５．４６和（Ｎｄ_０．１８Ｙｂ_０．１８）Ｓｉ_{１０.３８}Ａｌ_１．６２Ｏ_０．５４Ｎ１_５．４６的复合稀土掺杂α－Ｓｉａｌｏｎ材料在１２００～１４００℃温度范围内的氧化行为进行了研究．样品由热压工艺制备．研究结果表明,在１２００和１３００℃氧化２０ｈ的材料表面存在择优取向的含Ｎｄ和Ｙ（或Ｙｂ）－硅酸盐晶粒．随氧化温度的提高,氧化表面由相对致密的硅酸盐氧化层软化形成气泡直至出现明显的透明玻璃相．文中还对氧化过程中表面形成的物相进行了讨论．     

复合添加(Ca,Mg)-α-Sialon的晶胞参数研究

利用高分辨率的Ｇｕｉｎｉｅｒ－Ｈａｇｇ相机和计算机控制的底片扫描及数据处理程序系统,测定了复合添加,组份为（Ｃａ_０．５Ｍｇ_０．５）_xＳｉ_{１２－３ｘ}Al_3xＯ_ｘＮ１_６－ｘ（ｘ＝０．３、０．６、１．０和１．４）的α－Ｓｏａｌｏｎ的晶胞参数．材料由热压工艺制备而得．研究结果表明,当ｘ≥１．０时,材料的主晶相为α－Ｓｉａｌｏｎ和含Ｍｇ的ＡlＮ多型体．（Ｃａ,Ｍｇ）－α－Ｓｉａｌｏｎ的晶胞参数明显低于相同组份下的Ｃａ－α－Ｓｉａｌｏｎ的晶胞参数·ＥＤＡＸ的结果进一步给出固溶进入α－Ｓｉａｌｏｎ的包括名义组份中９０％的Ｃａ^＋＋和少量的Ｍｇ^＋＋,而大部分Ｍｇ^＋＋进入ＡlＮ多型体,这一结果为净化α－Ｓｉａｌｏｎ陶瓷的晶界提供了新的有效途径．     

嵌有纳米碳颗粒凝胶玻璃的制备及其发光特性

以磷酸三乙酯、硝酸铝和正硅酸乙酯为原料,通过它们的水解制备了ｘＡｌ_２Ｏ_３·ｘＰ_２Ｏ₅·１００ＳｉＯ_２（ｘ＝０．２５～３）凝胶．在６００℃对凝胶进行热处理,使其中的有机基团炭化,从而制备出了镶嵌有碳纳米颗粒的ｘＡｌ_２Ｏ_３·ｘＰ_２Ｏ_５·１００ＳｉＯ_２（ｘ＝０．２５,０．５）凝胶玻璃．在室温下以５３２ｎｍ激光（Ｎｄ：ＹＡＧ）激发,在 ６３０ｎｍ处有一强的发光峰,该发光现象是由镶嵌在凝胶玻璃中的纳米碳颗粒产生的．     

新型固体润滑及油品添加剂-硫代钼酸盐的制备

研究了在水溶液中合成新型固体润滑兼油品添加剂一ＮｉＭｏＯ_２Ｓ_２及其原料（ＮＨ_４）_２ＭｏＯ_２Ｓ_２的条件,其最佳参数为ｐＨ＝４～５,温度为３０℃左右和ｐＨ＝７～９;温度为－５～０℃．还对产品的组成、结构及形貌进行了分析观察,并验证了ＮｉＭｏＯ_２Ｓ_２作为油品添加剂和固体润滑剂从２０～６００℃的减摩性能;证实硫代钼酸镍是一种宽温度范围的润滑剂．     

铅基驰豫型复合钙钛矿结构PLZST的合成研究

采用传统陶瓷烧结工艺合成了单一复合钙钛矿结构的Ｐｂ_１－ｘＬａ_ｘ（Ｚｒ_ｙＴｉ_ｚＳｎ_{１－ｙ－ｚ}）Ｏ_３体系陶瓷（简称ＰＬＺＳＴ其中０．０１≤ｘ≤０．０５;０．３５≤ｙ≤０．７０;０．０５≤ｚ≤０．２０）．研究表明：在选定的工艺条件下,立方相和正交相ＰＬＺＳＴ易合成为单一复合钙钛矿结构,而四方相ＰＬＺＳＴ的合成较困难;采用多次球磨、加适量过量ＰｂＯ（３％）、控制成型压力、选择合适的烧结温度（１３５℃）有助于合成单一复合钙钛矿结构的ＰＬＺＳＴ．     

PZN—PT—PZT陶瓷的压电—铁电性能研究

将位于同型相界附近的固溶体系９．９１ＰＺＮ－０．０９ＰＴ作为一个组元,与同样位于准同上界的另一个组元Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）复合形成新的压电陶瓷体系（１－ｘ）（０．９１ＰＺＮ－０．０９ＰＴ）－ｘＰｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３,实验结果表明新体第具有更好的压电,介电性能,对样品退火处理后,发现压电,介电性能有较大提高,Ｋｐ最高达到７３％,ｄ３３最高达到５７０ｐｃ／Ｎ。     

铌镁酸铅-钛酸铅陶瓷介电与压电性能的研究

用二步合成法制备了（１－ｘ）Ｐｂ（Ｍｇ１／３Ｎｂ２／３）Ｏ３－ｘＰｂＴｉＯ３原料,并制成了纯钙钛矿结构压电陶瓷。研究三方－四主相界附近组份及工艺与性能的关系。材料以１２００℃附近保温１５０ｍｉｎ为佳。材料性能表明,有希望成为新型压电陶瓷。     

Conduction analysis of Li2O doped 0.2[Pb(Mg1/3Nb2/3)]–0.8[PbTiO3–PbZrO3] ceramics fabricated by columbite precursor method

We have fabricated 0.2Pb(Mg_1/3Nb_2/3)O₃–0.8Pb(Zr_0.475Ti_0.525)O₃ [PMN–PZT] ceramics doped with various amounts of Li₂O (0, 0.05, 0.1, 0.2, 0.3 wt.%) using the columbite precursor method. The effects of Li-doping on the conduction behavior of PMN–PZT ceramics are discussed in relation to the low frequency dielectric dispersion and frequency domain measurement. The Li-doped PMN–PZT ceramics sintered at 950 °C showed a sufficient densification with large dielectric constant and low dielectric loss. The incorporation of Li⁺ ion in PMN–PZT ceramics led to an appreciable reduction in electrical conductivity and further enhanced the ferroelectric and piezoelectric properties. The activation energies of PMN–PZT + xLi₂O (x = 0, 0.05, 0.1, 0.2, 0.3 wt.%) ceramics calculated from ac conductivity measurement using the Arrhenius relation were 1.05, 1.25, 1.27, 1.38 and 1.41 eV, respectively. The conduction behavior is examined in the low frequency and high temperature region and the results are discussed in detail through crystal defect mechanism.     

PZT陶瓷中由氧空位与畴壁相互作用引起的内耗

采用低频倒置扭摆内耗仪对组分为 Pb(Zr0.7Ti0.3)O3 (PZT73)和 Pb(Zr0.3Ti0.7)O3 (PZT37) 的两种陶瓷的内耗 Q-1及振动频率的平方 f 2（正比于材料的剪切模量 G）与温度的关系进行了 测定。在纯三角相的 PZT73陶瓷中发现两个内耗峰。高温内耗峰 PM起源于材料的顺电－铁 电相变 ,低温内耗峰 P1本质上是一个宽化的 Debye峰,可归因于氧空位作用下的畴壁振荡弛豫。 对纯四方相的 PZT37陶瓷,除了 P1和 PM峰外,在 P1与 PM峰之间另有内耗峰 P2,这与 900畴附 近的氧空位团簇的弛豫有关 ,其特征可用描述强关联系统的关联态模型（ Coupling model）描述。     

锰掺杂对0.2PZN-0.8PZT陶瓷压电性能的影响

研究了锰掺杂对0.2PZN-0.8PZT(PZNT)陶瓷微观结构及压电性能的影响,结果表明:随锰离子的添加,陶瓷晶粒长大,烧结致密;晶格发生畸变,体系的相结构由四方相向三方相过渡,居里点降低。此外,锰掺杂使材料体系“变硬”,ε₃₃^T/ε₀和tanδ变小,Q_m值增加,同时瓷体较高的致密度又保证了K_p不致降低。     

PZN-BZN和PZN-BT陶瓷介电性能研究

制备了Pb(Zn1／3Nb2／3)O3-Ba(Zn1／3Nb2／3)O3(PZN-BZN)和Pb(Zn1／3Nb2／3)O3-BaTiO3(PZN-BT)两类PZN基弛豫型铁电陶瓷,系统地研究了它们的介电性能以及热处理工艺对其介电性能的影响。合成出具有100％钙钛矿相的0．9PZN-0．1BZN陶瓷,其最大介电常数为6160(1kHz)。对比这两个系统的介电性能发现,PZN-BT系中隐含的BZN组分对陶瓷性能有着重要影响。退火热处理能显著提高PZN基陶瓷相变温度附近的介电常数,但对样品的相交扩散和介电弛豫现象没有明显影响。     

Effects of a PbTiO3 insertion layer on the morphological and electromechanical characteristics of sol-gel-driven 0.2PZN-0.8PZT piezoelectric films for energy harvesters

This study investigated the morphological and electromechanical characteristics of 0.2PZN-0.8PZT films fabricated using a PbTiO3 layer. Crack-free 1-microm-thick films with a pure perovskite phase were obtained on Pt/Ti/SiO2/Si substrates using a modified sol-gel deposition method. A highly dense and smooth morphology and a high piezoelectric coefficient (d33) of 230 pC/N were observed in a 0.2PZN-0.8PZT film with a PbTiO3 insertion layer after annealing at 750 degrees C. The as-produced sol-gel-driven 0.2PZN-0.8PZT thin films are attractive for application to piezoelectrically operated microelectronic actuators, sensors, or energy harvesters due to their low facility cost, smooth surface, and excellent electromechanical characteristics.     

Piezoelectric ceramics with high dielectric constants for ultrasonic medical transducers

Complex system ceramics Pb(Sc(1/2)Nb(1/2))O3-Pb(Mg(1/3)Nb(2/3))O3-Pb(Ni(1/2)Nb(1/2))O3-(Pb0.965,Sr0.035) (Zr,Ti)O3 (PSN-PMN-PNN-PSZT abbreviated PSMNZT) have been synthesized by the conventional technique, and dielectric and piezoelectric properties of the ceramics have been investigated for ultrasonic medical transducers. High capacitances of the transducers are desired in order to match the electrical impedance between the transducers and the coaxial cable in array probes. Although piezoelectric ceramics that have high dielectric constants (epsilon33t/epsilon0 > 5000, k'33 < 70%) are produced in many foundries, the dielectric constants are insufficient. However, we have reported that low molecular mass B-site ions in the lead-perovskite structures are important in realizing better dielectric and piezoelectric properties. We focused on the complex system ceramics PSMNZT that consists of light B-site elements. The maximum dielectric constant, epsilon33T/epsilon0 = 7, 200, was confirmed in the ceramics, where k'33 = 69%, d33 = 940 pC/N, and T(c) = 135 degrees C were obtained. Moreover, pulse-echo characteristics were simulated using the Mason model. The PSMNZT ceramic probe showed echo amplitude about 5.5 dB higher than that of the conventional PZT ceramic probe (PZT-5H type). In this paper, the electrical properties of the PSMNZT ceramics and the simulation results for pulse-echo characteristics of the phased-array probes are introduced.     

锰掺杂对硬性PZT材料压电性能的影响

研究了锰掺杂对ＰＺＴ材料微结构及压电性能的影响,并用ＥＳＲ确定了锰在ＰＺＴ材料中的价态．结果表明,锰在ＰＺＴ材料中主要以 Ｍｎ^２＋和 Ｍｎ^３＋的方式共存．锰在ＰＺＴ陶瓷材料中的“溶解度”约为１．５ｍｏｌ％．锰含量＜０．５ｍｏｌ％时,Ｍｎ将以Ｍｎ^２＋和Ｍｎ^３＋的方式优先进入晶格 Ｐｂ位,使材料的压电性能提高,表现出施主杂质特性;锰浓度处于 ０．５～１．５ ｍｏｌ％时,部分Ｍｎ将以Ｍｎ^３＋或Ｍｎ^２＋的方式进入晶格中（Ｚｒ;Ｔｉ）位,而此浓度范围内锰掺杂的ＰＺＴ材料同时表现出“软性”和“硬性”材料的压电特性．锰含量＞１．５ｍｏｌ％时,过量的Ｍｎ将在晶界积聚,使压电活性降低．少量Ｆｅ的存在,可使Ｍｎ离子的溶解度降低,并起到抑制Ｍｎ^２＋和 Ｍｎ^３＋氧化的作用.     

Characterization of lead zirconate titanate thin film deposition onto Pt/Ti/SiO2/Si substrates

Lead zirconate titanate, (Pb(Zr_0.52Ti_0.48)O₃PZT) thin films were deposited onto a Pt/Ti/SiO_2/Si substrate using radio frequency (r.f.) planar magnetron sputtering in this study. The deposited PZT thin films were almost amorphous before the annealing processes and developed a perovskite structure after the annealing process. If the annealing temperature was too low or annealing time too short, pyrochlore would form. However, if the annealing temperature was too high or annealing time too long, the thin film structure would degrade due to the volatilization of PbO. The significant finding in this experiment is that high quality perovskite PZT thin films on Pt/Ti/SiO_2/Si substrates can be obtained by adjusting the annealing temperature to a range of 650 °C to 850 °C and annealing time to a range from 5 to 80 min. In this experiment, the optimal annealing condition was an annealing temperature of 650 °C and time of 20 min. The properties of PZT thin film annealed at 650 °C for 20 min were dielectric constant _r = 869 free dielectric constant ^T ₃₃ = 893 piezoelectric constant d₃₃ = 2.03p m V^-1 piezoelectric constant g₃₃ = 2.57 x 10^-4 V m N^-1, remanent polarization P₁ = 112.5 nC cm^-2 and coercive field E_c= 0.061 kV cm^-1.