1.2 Gbit/s, 52.5 km optical fibre transmission experiment usingOEICs on GaAs-on-InP heterostructure

High-performance, long-wavelength OEICs on a GaAs-on-InP heterostructure were fabricated. For the transmitter OEIC, high-speed operation up to 2.4 Gbit/s was achieved, and a receiver sensitivity as high as -26.0 dBm for a 1.2 Gbit/s NRZ signal was realised for the receiver OEIC. To confirm the usefulness of these OEICs for optical fibre networks, a 1.2 Gbit/s optical fibre transmission experiment was successfully carried out over a 52.5 km span     

Optoelektronische ICs für DVD-Systeme

Digital-Versatile-disk (DVD) systems need optoelectronic integrated circuits (OEICs) as key components in order to achieve high bandwidths. Here, the possibilities and limits of OEICs are investigated. OEICs with integrated transimpedance amplifiers in BiCMOS technology are described. Additionally a new circuit topology for the reduction of the offset voltage of the OEICs is suggested.     

Spectral Loss Characterization of Femtosecond Laser Written Waveguides in Glass With Application to Demultiplexing of 1300 and 1550 nm Wavelengths

Femtosecond laser written waveguides in glass were characterized across the full telecom spectrum to gain insight into waveguide loss mechanisms, and to aid in the design of a low-loss 1300/1550 nm wavelength demultiplexer. A lambda^-4 wavelength scaling of propagation loss confirms Rayleigh scattering as a principal loss mechanism. Laser exposure was optimized for generating low-loss directional couplers with high isolation between the 1300 and 1550 nm bands. Dispersive coupling in the straight and curved wavelength regions was balanced with a 1.5-fold difference in 1300 and 1550 nm beat lengths, leading to the first demonstration of 1300/1550 nm demultiplexer written with a laser. A minimum interaction length of 3.2 mm, ~2 dB insertion loss and channel isolations of 16.7 and 18.8 dB are reported.     

Monolithic Integration of InP HBTs and Uni-Traveling-Carrier Photodiodes Using Nonselective Regrowth

This paper describes the monolithic integration of InP HBTs and uni-traveling-carrier photodiodes (UTC-PDs) by nonselective regrowth. HBTs are fabricated from nonselectively regrown device layers and UTC-PD subcollector layers, which are grown first on a 3-in InP substrate. This makes it possible to optimize the layer design for the HBTs and UTC-PDs independently and minimize the interconnection between them. The fabricated HBTs have a collector thickness of 200 nm, and they show an f_t of 260 GHz and an f_max of 320 GHz at a collector current density of 2.5 mA/mum². The standard deviations of the f_t and f_max across the wafer are 1.7% and 4.4%, respectively. The length of the interconnection between the HBTs and UTC-PDs can be made as small as 10 mum without any degradation of the regrown-HBT performance. The UTC-PDs fabricated on the same wafer exhibit a 3-dB bandwidth of 100 GHz and an output voltage of 1.0 V. There is no drawback in the performance of either device, as compared with that of discrete devices. We also demonstrate 100-GHz optical-input divide-by-two optoelectronic integrated circuits (OEICs) consisting of InP HBTs and a UTC-PD using this technique. These results indicate that the nonselective regrowth is promising for application toward over 100-Gb/s OEICs.     

A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOStechnology

Results of a monolithically integrated Si optical receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of 1 Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10^-9 . The sensitivity of this OEIC in a 1.0-μm CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ω effective transimpedance bandwidth product of the implemented amplifier is achieved     

Polymer micro-ring filters and modulators

Micro-ring wavelength filters and resonant modulators using polymer materials at 1300 nm and 1550 nm are analyzed, designed, and demonstrated. The rings are integrated with vertically coupled input and output waveguides. The devices are fabricated using optical lithography. Filters with a finesse of 141 and free spectral range of 5 nm at 1300 nm and finesse of 117 with a free spectral range (FSR) of 8 nm at 1550 nm are demonstrated. Ring resonators with a Q as high as 1.3 /spl times/ 10/sup 5/ at 1300 nm are demonstrated. The filters can be temperature tuned at the rate of 14 GHz//spl deg/C. Resonant ring modulators, which use an electrooptic polymer, are demonstrated. The resonance wavelength voltage tunes at the rate of 0.82 GHz/V. The modulators have a bandwidth larger than 2 GHz. Using the resonant modulator, and open eye diagram at 1 Gb/s is demonstrated.     

Low-noise current optoelectronic integrated receiver with internalequalizer for gigabit-per-second long-wavelength optical communications

An equalizer, which is essential in order to improve the sensitivity of receiver optoelectronic integrated circuits (OEICs) at a gigabit-per-second data rate, has been monolithically integrated on an InP substrate with a p-i-n photodiode and a high-impedance high-electron-mobility-transistor (HEMT) amplifier. The receiver operated up to 1.6 Gb/s and showed low noise current characteristics. The minimum noise current is less than 4 pA/√Hz. The sensitivity calculated from the noise current characteristics is -28.4 dBm for 1.6-Gb/s signals. The receiver chip, which was assembled on a ceramic mount, exhibited a sensitivity of -30.4 dBm at 1.2 Gb/s and 1.3-μm wavelength. The performance is as good as those of receiver OEICs with an external equalizer and sufficient for practical use in gigabit-per-second optical communication system     

1300-nm pulsed fiber lasers mode-locked by purified carbon nanotubes

For the first time, we demonstrate a novel passively mode-locked fiber laser operating at 1300 nm using purified single-walled carbon nanotubes (CNTs) as a saturable absorber. The saturable absorber incorporates diameter-controlled CNTs with peak absorption /spl sim/1300 nm, guaranteeing mode-locking over the same wavelength region. The ring laser uses praseodymium-doped fiber as a gain medium. The pulse repetition rate is 3.18 MHz, and the spectral half-width is 0.15 nm. Dual-wavelength mode-locking is also demonstrated with a channel spacing of 1.1 nm.     

光电子集成技术的现状及其发展方向

光电子集成电路（ＯＥＩＣ）是新一代光通信系统的理想的关键部件。文章详细介绍了单片ＯＥＩＣ对材料生长技术和集成器件的要求，以及单片ＯＥＩＣ的基本结构和类型，并提出了单片ＯＥＩＣ未来的发展方向。     

光电子集成电路进展

较详细地介绍了光电子集成电路(OEIC)中研究最广泛、并取得可喜成就的OEIC光接收机和OEIC光发射机的最新进展,展望了OEIC的应用前景,并提出了目前应解决的课题。     

Integrated optoelectronics for optical transmission systems

A brief overview is given of research on optoelectronic integrated circuits (OEICs). Their performance, design, and manufacturing advantages are discussed. Device approaches and state-of-the-art OEICs are described. Future prospects for OEICs are considered     

Polarization-insensitive quantum-well semiconductor opticalamplifiers

Theoretical modeling and fabrication of polarization-insensitive semiconductor optical amplifiers that use a multi-quantum-well structure as the gain media are reported. Polarization insensitivity of gain is achieved through the introduction tensile strain into the quantum wells. Gain calculations, using the k·p method, were performed to obtain the required amount of tensile strain to obtain polarization insensitivity over a wide energy spectrum. Fabricated amplifiers show a polarization-insensitive (<1 dB) spectral width of 10 nm at 1300 nm in the InGaAsP/InP system, 15 nm at 1300 nm in the AlInGaAs/InP system, and 40 nm at 1550 nm in the AlInGaAs/InP system     

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.     

Transmission at 1 Gbit/s over 7.4 km of single-mode fibre using an edge-emitting LED and PINFET receiver

Transmission at 1 Gbit/s over 7.4 km of 1300 nm optimised single-mode fibre has been demonstrated using a standard, 1300 nm edge-emitting LED with 150 MHz 3 dB bandwidth and a PINFET receiver. Computer simulation was used to accurately assess each of the system degradations: LED rise/fall, extinction ratio, dispersion penalty and receiver noise.     

Determining the mode-field diameter of single-mode optical fiber: An interlaboratory comparison

The National Bureau of Standards, in cooperation with the Electronic Industries Association, conducted an interlaboratory measurement comparison among fiber manufacturers. Evaluated were transverse splice offset, near-field, far-field, and variable aperture far-field methods for determining mode-field diameter. Measurements were performed on five single-mode fibers at both 1300- and 1550-nm wavelengths. At 1300 nm, agreement was fairly good with the average one standard deviation being 0.15 μm for mode-field diameters in the8-11 mum range. Distinct systematic differences among various techniques were observed at 1550 nm where mode distributions are not as Gaussian.     

Development of a photonic integrated transceiver chip for WDMtransmission

With the observed expansion of fiber-optic networks and the movement of line terminals towards the individual customer the need for cost-effective fabrication of customer access modules for interactive services arises. Monolithic integration of the module functions on InP is frequently seen as a means to reduce module costs. Here we describe a generic fabrication process for InP photonic integrated circuits and demonstrate an initial transceiver chip with transmit, receive and 1300/1530 nm wavelength division multiplexing functions. The chip output power reaches 1 mW at 1530 nm with a laser threshold current of 20 mA. The detection efficiency at 1300 nm is 0.1 A/W of fiber power     

光纤通信用光电集成电路

本文介绍了光电集成电路(OEIC)工艺技术的新思想和新方法;叙述了光纤通信用 OEIC 器件的新结构与特性;分析了 OEIC 用于光纤通信的几个问题。     

CMOS photodiode with enhanced responsivity for the UV/blue spectralrange

A new photodiode for the UV/blue spectral range, which can be integrated monolithically with CMOS circuits, is presented. Such optoelectronic integrated circuits (OEICs) with a high sensitivity in the UV/blue spectral range are needed in near-future optical storage systems like digital versatile disk (DVD) or digital video recording (DVR). At 400 nm, our so-called finger photodiode achieves a responsivity of 0.23 A/W corresponding to a quantum efficiency η of 70% [with an antireflection coating (ARC)] and rise and fall times of 1.0 ns and 1.1 ns, respectively. The finger photodiode can be used in the red spectral range, too. At 638 nm, the responsivity is 0.49 A/W (η=95%) and rise and fall times of less than 2.3 ns are achieved. For the integration of the finger photodiode in an industrial 1 μm twin-well CMOS process, only one additional mask is needed in order to block out the threshold voltage implantation in the photo-active region     

Optoelectronic integration: A technology for futuretelecommunication systems

An overview is given of research on optoelectronic integrated circuits (OEICs) since the late 1970s. The current state of OEICs for telecommunication applications is examined. The quaternary alloy material InGaAsP, which can be grown lattice matched to InP, is the material of choice for fabricating emitters and detectors. Because these materials do not lend themselves to a simple MESFET technology, there has been extensive research into alternative electronic device structures such as MISFETs, JFETs, and heterojunction bipolar transistors for integration with optical devices. Problems that remain to be solved are identified     

A high efficient 820 nm MOS Ge quantum dot photodetector

A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm/sup 2/. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.