10～40Gb/s OEIC光接收机前端的最新研究进展

基于OEIC光接收机前端的集成方式和前放电路形式介绍了OEIC光接收机前端的最新研究进展.     

Si基高速0EIC光接收机芯片的研究

Si基光电子集成(OEIC)光接收机在光通信系统接入网、光互连、光存储等方面有着广泛的应用前景。本文综述Si基OEIC光接收芯片的研究现状，分析了其发展趋势，探讨了进一步提高性能的途径。     

韩国的OEIC研究

本文按年代介绍韩国光电子和光电集成电路（OEIC）的进展以及用于通信的OEIC发射机和接收机，用于光开关和光计算的半导体激光逻辑器件。     

光电子集成器件研究的新进展

本文介绍 OEIC 器件,侧重于基于 GaAs 和 InP 材料的、应用于光纤通信的 OEIC 发射器、接收器和中继器的发展现状、器件性能和各种关键新工艺,并探讨了其发展动向。     

光集成的研究热点及光集成器件研究进展

近几年来,全球及国内光通信行业得到了长足的发展,光通信正向高速、大容量、宽带、长距离及低成本方向迅速发展。光器件和光电器件的集成化是光通信最重要的核心技术,而它的发展方向就是光集成(PIC)和光电集成(OEIC)。     

基于InP/InGaAs HBT技术的单片集成长波长光接收OEIC

采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9.     

基于InP/InGaAs HBT技术的单片集成长波长光接收OEIC

采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9.     

Pin/HBT OEIC光接收机

介绍了pin/HBT单片集成OEIC光接收机的集成结构和电路结构,分析了这种集成方式的光接收机前端设计过程中影响带宽和灵敏度的因素,总结了集成器件最新的研究进展。     

单片集成光发射器频率特性分析

本文对Tucker等的激光二极管小信号模型作了改进,进而用SPICE程序分析了由异质结晶体管(HBT)电路和激光二极管组成的单片集成光发射器的频率特性。通过分析,提取了适合于目前常规工艺的优化参数,并就此计算了优化后的OEIC频率特性。电路参数优化后的单片集成光发射器的频响接近单个LD的频响。     

热门光电子技术——OEIC和PIC

光电子集成和光子集成(OEIC和PIC)技术是当今的热门技术,它们借鉴并发展了电集成的许多概念和方法。先从分离的光学、电子器件和简单功能的OEIC开始,再发展到多功能的超大规模OEIC。OEIC与IC的重要区别是:OEIC除了控制不同元件之间电子流动外,还必须控制光子流动。OEIC是以高频率的光波作为载波,因此不仅具有功能强、体积小、重量轻、功耗小、工作稳定可靠、成本低、便于大规模生产等IC的一般特点外,还具有响应速度快、频带宽、光并     

Optoelektronische ICs für DVD-Systeme

Digital-Versatile-disk (DVD) systems need optoelectronic integrated circuits (OEICs) as key components in order to achieve high bandwidths. Here, the possibilities and limits of OEICs are investigated. OEICs with integrated transimpedance amplifiers in BiCMOS technology are described. Additionally a new circuit topology for the reduction of the offset voltage of the OEICs is suggested.     

Integrated optoelectronics for optical transmission systems

A brief overview is given of research on optoelectronic integrated circuits (OEICs). Their performance, design, and manufacturing advantages are discussed. Device approaches and state-of-the-art OEICs are described. Future prospects for OEICs are considered     

光电子集成技术的现状及其发展方向

光电子集成电路（ＯＥＩＣ）是新一代光通信系统的理想的关键部件。文章详细介绍了单片ＯＥＩＣ对材料生长技术和集成器件的要求，以及单片ＯＥＩＣ的基本结构和类型，并提出了单片ＯＥＩＣ未来的发展方向。     

光纤通信用光电集成电路

本文介绍了光电集成电路(OEIC)工艺技术的新思想和新方法;叙述了光纤通信用 OEIC 器件的新结构与特性;分析了 OEIC 用于光纤通信的几个问题。     

Optoelectronic integration: A technology for futuretelecommunication systems

An overview is given of research on optoelectronic integrated circuits (OEICs) since the late 1970s. The current state of OEICs for telecommunication applications is examined. The quaternary alloy material InGaAsP, which can be grown lattice matched to InP, is the material of choice for fabricating emitters and detectors. Because these materials do not lend themselves to a simple MESFET technology, there has been extensive research into alternative electronic device structures such as MISFETs, JFETs, and heterojunction bipolar transistors for integration with optical devices. Problems that remain to be solved are identified     

OEICs for WDM transceiver modules fabricated by reactive ion etching on semi-insulating substrates

The design and fabrication of OEICs on semi-insulating InP substrates comprising 1300 nm DFB lasers, 1300/1530 nm wavelength duplexers and monitor photodiodes is described. OEIC lasing thresholds were as low as 20 mA. The through-state crosstalk for the integrated duplexer was typically -12 dB. Linear tracking of the laser output by the monitor photodiode was achieved with sensitivities in the region of 70 mu A/mW. The OEICs operated successfully in a 622 Mbit/s bidirectional optical link.<>     

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.     

1.2 Gbit/s, 52.5 km optical fibre transmission experiment usingOEICs on GaAs-on-InP heterostructure

High-performance, long-wavelength OEICs on a GaAs-on-InP heterostructure were fabricated. For the transmitter OEIC, high-speed operation up to 2.4 Gbit/s was achieved, and a receiver sensitivity as high as -26.0 dBm for a 1.2 Gbit/s NRZ signal was realised for the receiver OEIC. To confirm the usefulness of these OEICs for optical fibre networks, a 1.2 Gbit/s optical fibre transmission experiment was successfully carried out over a 52.5 km span     

Monolithically integrated polarisation diversity heterodynereceivers on GaInAsP/InP

Polarisation diversity heterodyne receiver OEICs including a tunable four-section DBR laser as a focal oscillator have been successfully fabricated for the first time. OEIC design and fabrication are described and first characteristics of the integrated subcomponents and a packaged receiver OEIC are presented     

高速光器件的光集成及光电集成

本文介绍了高速激光器的现状，并综述了高速激光器的光集成和接收机的光电集成。最后，讨论了光集成和光电集居技术及今后的发展。