TMN软件一致性测试概念模型的研究

介绍了ＴＭＮ软件一致性测试的基本概念和测试层次。提出了ＴＭＮ软件一致性测试的概念模型,根据概念模型给出了从高层向低层的ＴＭＮ软件一致性测试的映射方法。     

TMN信息模型一致性测试中并行测试调度方法的研究

讨论了ＴＭＮ信息模型一致性测试中并行测试调度的设计方法。采用基于有限自动机的设计方式来设计并行测试调度功能实体，解决了测试过程中的并行测试问题，该方法可以缩短测试时间，提高测试效率。     

电信管理网络

电信管理网络熊开盛董兆鑫一、电信管理网络（ＴＭＮ）的结构ＴＭＮ对电信网实施管理控制，电信网为ＴＭＮ采集信息，提供通信，并接受ＴＭＮ的控制。ＴＭＮ是收集、处理、传送和存储有关电信网维护、操作和管理信息的一种综合手段，ＴＭＮ是一个有组织的网络，可以提供一...     

TMN标准的现状和发展方向

为了顺应信息产业的要求,ＴＭＮ技术必须拓宽其功能以支持分布式的管理。文章从ＴＭＮ的结构,功能需求,信息模型,协议特性和对协议描述等方面对ＴＭＮ标准现状作了分析,并在权衡了其利弊之后,对ＴＭＮ的发展方向－ＴＩＮＡ作了探讨。     

TMN管理功能

ＴＭＮ管理功能是业务用户所感知的ＴＭＮ管理业务最小的部分。实际上，它通常由对一个确定的被管理对象或几个对象实施的一连串动作组成。本建议中规范的ＴＭＮ功能提供所用电信活动（此时所辨明）诸如电路测试、告警监视、业务量管理等所需的普遍的和特殊的功能度。     

电信管理网与SDH管理网（上）

阐述电信管理网（ＴＭＮ）的结构、功能及与开放系统与互连（ＯＳＩ）的关系；ＳＤＨ管理网（ＳＭＮ）的组织模型、与ＴＭＮ及ＳＤＨ管理子网（ＳＭＳ）的关系；ＳＤＨ的信息模型；ＳＭＮ的分层结构管理功能，规约栈，嵌入控制通路（ＥＣＣ）互通，以及操作运行Ｑ、Ｆ接口等。     

电信网和互联网网管信息模型的比较和分析

网络管理信息模型是网络管理系统的重要组成部分,是网络管理系统的基础． 目前流行的主要是基于电信管理网（ＴＭＮ－ｂａｓｅｄ）和基于互联网（ＩＮＴＥＲＮＥＴ－ｂａｓｅｄ）这两种网络管理信息模型．本文概述了基于电信管理网（ＴＭＮ）和基于互联网（ＩＮＴＥＲＮＥＴ）这两种管理信息模型的结构,方法和各自的特点,并进行了比较分析．     

TMN信息平台和应用平台的构建

本文提出电信管理网的一种逻辑模式，它包括信息平台，应用平台，支撑平台，开发及管理的手段和方法的集合，质量保证体系等五大部分。本文指出可以从构筑信息平台和应用平台的角度研究现现有各类电信专业网管系统向ＴＭＮ过渡的策略问题，文章内容包括ＴＭＮ的框架定义，ＴＭＮ信息平台，应用平台等逻辑模式的一般性描述，并提出电信管理网信息平台的应用平台研究的着眼点和主要任务。     

TMN网管体系的演进（2）

３ＴＭＮ标准走向由于电信业的管理要求在发展变化 ,ＴＭＮ实现的技术也在不断进展之中 ,因此ＴＭＮ标准也在逐步制定、增改、完善中。目前 ,ＴＭＮ标准的研究制定集中在以下３个主要领域。·业务管理领域研究指定业务管理协议及其信息模型 ,实现端到端业务的无缝隙处理 ,提高效率 ,提高客户服务质量 ,逐步实现电信业务的自动管理。·协同作业领域ＴＭＮ网络需要同现有的电信网络及系统实现互操作 ,以保证运营商的协同作业 ,ＣＭＩＰＯｖｅｒＴＣＰ／ＩＰ（即ＣＭＯＴ）已经被接受作为ＴＭＮ协议系列的一种 ;标准研究的主要部门如ＩＳＯ、Ｎ…     

电信管理网（TMN）概述（上）

本文较详细地介绍了电信管理网（ＴＭＮ）的概念，结构，信息模型，通信协议和服务以及管理功能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.