基于集成黑体法1000～1500℃石墨材料高温红外光谱发射率测量

建立了基于集成黑体法的材料高温红外光谱发射率测量理论模型,重点讨论了不等温集成黑体空腔有效发射率、观测因子、样品材料外推温降因素的影响。基于集成黑体法搭建了以傅里叶红外光谱仪为红外辐射探测系统的高温红外光谱发射率测量装置。基于蒙特卡罗光线追迹法数值开展了集成黑体有效发射率数值模拟,并进行了实验验证。讨论了辐射源尺寸效应、光谱响应度线性度等非理想因素对集成黑体法高温光谱发射率测量的影响。开展了石墨材料在1 000℃、1 300℃、1 500℃的红外光谱发射率实验研究,并与已公开发表的测量结果进行了比对。本文结果与文献数据优于5%的良好一致性,验证了集成黑体方法在高温发射率测量中的可行性。     

基于集成黑体法的1 000~1 500℃石墨材料高温红外光谱发射率测量

建立了基于集成黑体法的材料高温红外光谱发射率测量理论模型,重点讨论了不等温集成黑体空腔有效发射率、观测因子、样品材料外推温降因素的影响。基于集成黑体法搭建了以傅里叶红外光谱仪为红外辐射探测系统的高温红外光谱发射率测量装置。基于蒙特卡罗光线追迹法数值开展了集成黑体有效发射率数值模拟,并进行了实验验证。讨论了辐射源尺寸效应、光谱响应度线性度等非理想因素对集成黑体法高温光谱发射率测量的影响。开展了石墨材料在1 000℃、1 300℃、1 500℃的红外光谱发射率实验研究,并与已公开发表的测量结果进行了比对。本文结果与文献数据优于5%的良好一致性,验证了集成黑体方法在高温发射率测量中的可行性。     

前置反射罩氨热管黑体辐射源

为满足红外耳温计现场校准和量值比对的需求, 研制了30~42℃便携前置反射罩不锈钢-氨 热管黑体辐射源。黑体辐射源空腔为圆柱双圆锥形,空腔深为272mm ,内径为60mm,锥 顶角为120°;口部安装紫铜镀金反射罩,反射罩光阑开口直径为20mm,张角为100°,内表面喷 涂发射率为0.95的黑漆;利用基于Monte Carlo法的STEEP321NIM计算 软件,计算出的空腔口平面0°到 100°出射角内的有效发射率均优于0.999。温 度控制系统由PID调节器、高稳定精密铂电阻、直流电源和双 金属限温开关等组成,实现了黑体辐射源温度控制的高可靠性。实验测量的黑体辐射源温度 稳定性优于0.002℃/20min,空腔测温管内均匀性优于0.03℃。     

基于控制环境辐射的黑体辐射源发射率测量方法研究

介绍了中国计量科学研究院基于控制环境辐射的黑体辐射源发射率测量原理、方法和装置的研究进展。基于普朗克黑体辐射理论,建立了控制环境辐射的黑体辐射源发射率测量方法的理论模型,并且搭建该测量装置,研究了该方法测量黑体辐射源发射率的结果和影响因素。利用该系统测得的黑体辐射源发射率测量的结果与理论模拟的结果高度吻合,测量重复性(标准偏差)达到0.07%。实验结果表明该方法在测量黑体发射率时不受热辐射环温度重复性的影响,当热辐射环温度与被测黑体温度的差异足够大时,热辐射环温度的变化对黑体发射率测量结果的影响可以满足应用的需求。该方法具备热红外遥感载荷在轨定标黑体的发射率测量的应用潜力,为我国红外遥感在轨定标系统定量化水平的提高提供重要技术基础。     

Monte—Carlo法计算圆柱型空腔的表观发射率

黑体空腔已广泛用作辐射度量学、光度学和光测温学中的标准辐射源。由于对测量精度的要求越来越高,相应地,对腔发射率值的精确程度也提出了越来越高的要求。因为精确地测量发射率值很困难,所以标准源的腔发射率一般采用理论公式计算。常用的理论计算方法有积分方程法和多重反射亮度法。主要的近似计算公式有漫射壁空腔的Devos公式和漫射壁等温腔的Gouffe’公式。     

基于高温黑体的傅里叶光谱测量系统响应度分段线性标定

傅里叶红外光谱仪（FTIR）光谱响应度的标定工作是FTIR红外光谱精准测量的基础。基于中国计量科学研究院（NIM）的ThermoGage HT9500型高温基准黑体辐射源,对NIM搭建的FTIR高温黑体红外辐射特性测量系统的光谱响应度,通过分段线性标定法进行了标定实验。建立并描述了FTIR测量高温黑体红外辐射特性系统响应度函数标定模型,并通过测量的黑体辐射源在1 273~1 973 K温区、1~14 m宽频谱内的红外光谱,对FTIR测量系统的光谱响应度进行了标定实验研究。结果表明:分段线性标定FTIR红外光谱测量系统方法具有良好可靠性。1 373~1 873 K温区的测量光谱与基于黑体标定的计算光谱在1~14 m频谱内平均偏差优于1%,黑体光谱辐射亮度峰值波长上反演得到的黑体计算温度与实际温度偏差优于0.45%。     

非等温漫射空腔辐射特性的Monte—Carlo解

本文应用Monte-Carlo法计算了非等温圓锥——圆筒漫射空腔发射率及腔口处空腔发射率分布。从而简化了黑体炉辐射出射度及积分发射率的计算,并为实际的镜——漫混合反射模式的空腔特性计算提供了先决条件。     

粉体材料的法向光谱发射比测试系统的设计

阐述了采用“单光束比较辐射度量法”测量材料的法向光谱发射率的原理和系统设计 方法;改进、设计制作了黑体炉、样品炉、斩波装置、扫描装置和A/ D 转换系统,用V C + + 完成了“法向光谱发射比测试系统中文操作软件”的编写;利用此系统测量了涂料样品的法向光谱发射率。     

直挂云帆济沧海——写在《军医进修学院学报》创刊30周年

为了解决特殊环境下的瞬态高温测量,研制了一种基于黑体辐射的光纤高温测量系统.介绍了该系统的工作原理,采用"接触-非接触"测量方法和光纤光栅窄带滤波技术,分析了影响黑体空腔传感器有效发射率的各种因素,并给出了优化设计参数.试验表明,系统测温范围可达2 000℃,响应时间小于120 ms,性能稳定,抗干扰能力强.     

红外标准辐亮度计的研制及定标

黑体参考光源辐亮度精度是决定红外遥感器绝对辐射定标精度的关键因素。为了提高黑体辐亮度测量精度,设计了一种直接测量黑体辐亮度的红外标准辐亮度计。描述了整个系统的光机设计方案和工作原理,利用高精度水浴黑体对辐亮度计进行定标。实验结果表明:辐亮度计的1 h非稳定性优于0.03%;测量黑体辐亮度不确定度达0.22%,相当于308 K时辐亮度温度不确定度73 mK。该标准辐亮度计具有系统级测量、高精度溯源等优点,可实现黑体辐亮度与实验室辐射标准之间的溯源。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.