基于CPLD的全帧型CCD图像传感器驱动系统设计

CCD芯片的驱动系统是数字航测相机的核心部分,它关系到整个相机的性能和技术指标.这里介绍了高分辨率全帧CCD芯片FTF4052M的内部结构和驱动时序.采用集成芯片设计该CCD芯片的驱动电路,并应用于数字航测相机系统.实验结果表明,该CCD驱动系统采用CPLD进行设计,具有性能好,功耗低,体积小的优点,满足了数字航测相机系统的设计要求.     

基于USB2．0和线阵CCD的高速数据采集系统设计

为了解决电荷耦合器件(CCD)图像数据高速采集和实时传输处理问题,设计了一种基于USB2.0的高速CCD数据采集系统.系统采用可编程逻辑(CPLD)实现时序控制和逻辑控制,专用视频信号处理芯片XRD4460实现高速A/D转换;为了保证CCD图像数据高速传输,采用先进先出(FIFO)作为CCD数据流与8051单片机之间的缓存区进行数据缓存,采用CY7C68013接口芯片的GPI接口模式完成控制信号的发送以及实现采集系统与计算机之间的数据高速传输.     

高密度模块化TDI CCD成像系统设计

为提升遥感相机的高密度组装技术,采用厚膜集成电路技术设计了高集成度的TDI CCD成像系统,并对该成像系统中的具体设计做了详述。首先TDI CCD焦平面通过机械拼接方式拼凑成可复制的单元。然后,通过三极管射极跟随器增强CCD输出图像信号强度传送给模拟前端芯片LM98640中转换成14 bit的数字信号,再传给现场可编程门阵列芯片XC5VLX50T-1FFG1136C缓存和整合处理。最终,通过TLK2711高速LVDS输出芯片传输给数据采集卡并在计算机上成像。该成像系统中所有的驱动信号和处理时序都是通过现场可编程门阵列产生的,计算机可以通过RS422通信总线对成像系统进行控制和部分参数修改。该系统中的驱动电路和CCD二次电源电路采用厚膜集成电路技术设计,提高了系统的集成度。实验结果表明:整个系统基于厚膜技术,驱动电路PCB电路板减少了2/3的面积,同时采用了机电热一体化的设计,实现了相机的高密度组装。该系统总数据输出速度达到3.6 Gbps,饱和输出图像信噪比52.6 dB。     

基于行间转移CCD场输出模式下的成像系统设计

采用SONY行间转移型面阵CCD ICX415AL作为传感器件,设计了一种新型的CCD成像系统.成像系统采用CCD信号专用芯片CXA1310AQ进行信号处理,使输出信号满足模拟信号PAL/CCIR标准,可以采用电视机或者配有视频卡的计算机作为显示终端.针对 ICX415AL的结构和特点,设计了系统的时序电路和驱动电路.CCD工作模式为场输出模式,可以理解为垂直方向的Binning技术.采用相关双采样(CDS)技术滤除了视频信号中的相关噪声,提高了系统的信噪比.整个系统采用现场可编程门阵列作为核心器件,通过自上而下的模块设计完成了CCD驱动时序、数据采集时序控制和视频信号简单处理.     

基于千兆以太网的CCD相机设计

基于目前国内科学级CCD相机普遍采用USB2.0,其传输速度较低,传输距离较短的现状,设计了一款基于千兆以太网接口的CCD相机。采用Altera公司的Cyclone II系列FPGA建立NIOS II软核做控制器,采用物理层(PHY)芯片加数据链路层(MAC)芯片的结构建立千兆以太网传输系统。实验中传输速率最高可达700 Mb/s,传输距离可达50m,从而解决了现存CCD相机存在的两大问题。     

基于线阵CCD扫描的车辆图像采集系统设计

为了实现对车牌识别系统对高速行驶车辆图像分辨率的要求,提出了一种基于线阵CCD扫描的车辆图像系统的方案,完成了对线阵CCD芯片驱动电路的设计。该系统的硬件部分完成对线阵CCD芯片的驱动和图像采集,软件部分完成对图像的速度补偿。经实验验证,该系统具有操作简便、采集图像具有高分辨率的特点,达到了设计目的。     

行间转移型面阵CCD图像采集系统的研究

详细介绍了一种行问转移型面阵CCD的图像采集系统的原理及硬件组成。设计了基于复杂可编程逻辑器件（CPLD）的CCD驱动时序发生器及上电顺序可控的智能电源,采用视频处理专用集成芯片对视频信号进行去噪量化。测试结果表明该系统实现了对面阵CCD信号快速而准确地采集,其硬件电路结构简单、调试灵活、通用可靠,具有一定的实用价值和应用前景。     

基于CPLD的高速面阵CCD驱动电路设计

着重介绍了基于CPLD来设计产生高速面阵IA-D1CCD芯片复杂驱动时序和整个CCD相机的电子系统控制逻辑时序。同时采用CCD视频处理专用集成芯片处理CCD输出信号,提高了图像信噪比,改善了图像质量。使用结果表明:该硬件电路结构简单、成本低廉、可靠性高、功耗较低,并满足了工程项目小型化的要求。     

行间转移型面阵CCD成像系统设计

采用行间转移型面阵CCD KAI-1020作为图像传感器,以现场可编程门阵列（FPGA）为核心控制器,设计并实现了一个完整的成像系统。FPGA产生驱动时序、控制CCD上电顺序、调节曝光时间,并实现数据缓存。CCD模拟视频信号经过预处理,通过同轴电缆传输到CCD专用视频处理器进行相关双采样和模数转换,以10位像素深度输出到FPGA,数字视频信号经过差分芯片驱动以低压差分信号（LVDS）格式输出到数据采集卡。集成化视频处理电路提高了系统的信噪比,改善了成像质量。实验表明,CCD成像系统工作稳定可靠,像素读出时钟为10 MHz时,帧频为10帧/s。设计的CCD成像系统性能好、可靠性高、实现周期短,具有很强的可扩展性。     

基于ARM和FPGA的嵌入式CCD采集系统

提出了基于嵌入式技术CCD采集系统的新方法,并以ARM微处理器和FPGA芯片为核心设计了嵌入式CCD采集系统,解决了传统采集方法中系统过于庞大和复杂的问题,具有结构简单、小型化和智能化的特点.试验结果表明,该系统实现了CCD输出图像的高速采集和实时显示,数据采集速率达到5 MHz.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.