一种基于互补谐振结构的宽带共模噪声滤波器

提出了一种用于高速差分信号传输的宽带共模噪声滤波器,采用在差分线正下方参考地平面上刻蚀内外互补的共面波导1/4波长谐振器和Z字形短路枝节线来实现。滤波器采用内外互补耦合λ/4开路枝节线谐振器结构,有效减小了横向尺寸,利用Z字形枝节线增大互感以改善滤波器的带内增益平坦度,最后用级联实现了共模噪声抑制阻带的展宽。仿真和测试结果表明,该滤波器在4.1~12.5 GHz频率范围内实现了20 dB的共模噪声抑制,共模阻带相对带宽(FBW)为101%,尺寸仅为0.78λ_g×0.18λ_g(15.8 mm×3.6 mm),其中λ_g为阻带中心频率处对应的波长。且该结构在实现共模噪声宽带抑制的同时,还可有效保证差分信号传输特性良好。     

小型化宽频带宽阻带微带滤波器的设计

目前研究宽频带微带滤波器的文献很多,但普遍不能同时具有宽频带和宽阻带的性能,且带内回波损耗大,带外抑制差。为此,提出了一种新型的宽频带微带滤波器。该滤波器采用在E型阶跃阻抗谐振器( SIR)中引入U型结构的方法,实现其宽频带宽阻带的性能。对滤波器进行仿真、加工与实测,仿真结果与实测结果吻合良好。加工得到的滤波器3 dB带宽为7.1 GHz,低于-20 dB的高频阻带为9.3 GHz,带内回波损耗低于-23.2 dB,实物尺寸为15 mm伊8.5 mm,具有小型化的特点。实测数据表明,提出的滤波器具有良好的性能,在工程领域具有实际的应用价值。     

基于圆头谐振器的低插损带通滤波器设计

针对插入损耗高和选择性低等问题,提出了一种具有圆形开路终端的新型谐振器拓扑结构。该结构将传统的U型发夹滤波器改成V型,在V型结构的终端引入圆形开路谐振器,并在开路枝节短截线上过孔。基于新型谐振器结构设计了一款尺寸为42.9 mm×36.54 mm (0.35λ_g×0.3λ_g)的带通滤波器。该滤波器具有插入损耗低、通带可控和远端优良等优点,并且采用新型谐振器之间的交叉耦合,在近端1 GHz附近产生一个传输零点,有效优化了阻带抑制和带通滤波器的选择性。仿真结果表明,带通滤波器的中心频率为1.7 GHz, 3 dB的相对带宽为20%,最大回波损耗优于30 dB,最小插入损耗为0.20 dB,左边的带外抑制在50 dB以下,右边的带外抑制优于20 dB。实物测试结果与仿真结果基本一致,整体性能偏好,证明了该结构的可行性。     

基于闭合环和短路棒的宽阻带带通滤波器

为减小微带宽阻带带通滤波器的结构尺寸,抑制滤波器的高次谐波干扰,拓宽滤波器阻带,提出一种新的基于闭合环和短路棒的紧凑型宽阻带带通滤波器。该滤波器采用闭合环和短路棒结构,将滤波器设计为改进型1/4波长谐振器结构的宽阻带带通滤波器,以达到抑制高次谐波,减小滤波器尺寸的目的。实验结果表明该方法具有良好的效果。     

一种新型小型化宽阻带低通滤波器设计

对基于阶梯阻抗加载发卡型谐振器的多级椭圆函数微带滤波器进行了讨论.通过把两个谐振器用等效于电感的细微带线连接起来构成二级低通滤波器,其在阻带带宽和阻带衰减方面与单谐振器滤波器相比,取得了非常明显的改善.新设计滤波器的3dB截止频率位于2GHz,在2.5～25GHz具有小于10dB的衰减,而滤波器的面积仅等效于0.081λg×0.096λg(λg是在截止频率2GHz的导波波长),证明了此种谐振器在多级滤波器设计中的有效性.此外,为更好地理解此种滤波器工作原理,文中对单谐振单元滤波器的LC等效电路进行了提取.与其它微带低通滤波器相比,此种滤波器在小型化、宽阻带方面具有明显优势,可广泛应用于多种微波系统.     

宽阻带三模谐振器微带带通滤波器设计

介绍了一种新颖的微带三模谐振器,由该谐振器构成的微带滤波器具有较宽的通带以及较好的带外抑制。对传统的单模微带环形谐振器结构进行优化,使谐振器在通带内具有三个谐振点,并且在通带边缘有四个对称衰减极点。引入的阶梯阻抗谐振单元使得微带三模谐振器具有良好的带外抑制。依据传输线原理对宽阻带三模谐振器进行了分析,并完成了中心频率为1090 MHz的宽阻带带通滤波器设计和加工,其实际测试结果与软件仿真结果具有良好的一致性。     

基于T型枝节加载SIR的双频微带滤波器的设计

针对当前通信系统需要滤波器支持多频段、小型化和高性能等要求,提出了一种基于T型枝节加载SIR的频率独立可控双频微带滤波器结构。针对该谐振器,利用提出的特殊电耦合结构实现滤波器的小型化,并引入零度馈电结构构造传输零点来改善阻带抑制,最终得到覆盖WLAN 2.4 GHz和WLAN 5.2 GHz两个频段且占用尺寸仅为16.5 mm×21.7 mm的双频微带带通滤波器。由仿真结果显示,两个通带的中心频率分别为2.45 GHz和5.2 GHz,带内最小插入损耗分别为0.35 dB和0.47 dB,带内最小回波损耗分别为-44 dB和-34.8 dB,3 dB相对带宽分别为28.9%和11.3%,阻带抑制也因引入三个传输零点而大大改善。该滤波器结构整体尺寸小、插损低、频带宽且带外抑制特性好,具有一定的实际应用价值。     

具有多传输零点的微波陶瓷滤波器设计

低温共烧陶瓷(LTCC)滤波器具有体积小、插损小和衰减大的特性,为了抑制其阻带信号,研究并设计了具有带外多个传输零点的多层LTCC带通滤波器,分析了传输零点对滤波器性能的影响.最后利用HFSS仿真软件设计了一个具有三级耦合谐振器、尺寸为2.5 mm×2.0 mm×0.9mm、中心频率为2.45 GHz的带通滤波器.仿真...     

宽阻带小型化双频带通滤波器

文中提出了一种具有宽阻带的紧凑型双频带通滤波器,它采用了折叠短路枝节负载谐振器、紧凑型微 带单元谐振器(CMRC)和阶跃阻抗谐振器结构。由于多个谐振器产生了五个可控传输零点(TZ),该滤波器实现了两个 通带之间的良好隔离度以及宽阻带特性。制作并测试了尺寸紧凑的双频带通滤波器实验样品,测试结果显示,第一通 带和第二通带的中心频率/ 插入损耗分别为0. 66 GHz/0. 8 dB 和1. 73 GHz/0. 7 dB,阻带频率高达10. 5 GHz,抑制水平 超过15 dB。     

具有宽阻带和高共模抑制的差分滤波器设计北大核心CSCD

将阶跃阻抗谐振器与叉指耦合结构及扇形加载枝节相结合,设计了一款差分带通滤波器。该差分滤波器实现了极宽的差模阻带,并且通过引入非对称加载枝节,实现了抑制水平为16.7 dB的超宽共模抑制特性。此外,该差分滤波器在差模通带内的共模抑制水平可达63.1 dB。对设计的滤波器进行了制作和测试,测得滤波器的中心频率为2.94 GHz,相应的3 dB频带范围为2.85~3.03 GHz。该滤波器具有小型化的特点,电路尺寸仅为20.87 mm×14.96 mm,最终的测试结果和仿真结果吻合良好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.