论多媒体CAI在体育教学中的应用

在科技越来越发达的今天,运用多媒体进行教学早已成为学校教育的普遍现象,多媒体CAI受到广大师生的喜爱。体育教学是学校教育中的重要部分,在多媒体运用日益广泛的时代潮流之下,将多媒体CAI应用于体育教学中也是时代所需。多媒体CAI不仅给学生提供了一个好的学习环境,还能够有有效的缩短学习的时间,对提高教学质量与效率,实现最优教学目标,都起到非常重要的作用。本文主要对多媒体CAI在体育教学中的应用作了阐述,除了分析了当前的现状外,还将传统体育教学与体育教学中应用多媒体CAI进行对比,并提出在教学过程中应该注意的问题。     

浅谈软件工程技术在多媒体教育开发中的应用

计算机信息技术和互联网的迅猛发展,使得用于教育的多媒体课件十分普遍。对于CAI课件开发者来说,怎样提高效率,并且在短时间内能够制作出优秀的CAI课件是首要问题。利用软件工程的思想来作为多媒体课件开发的主体思想,以提高开发效率以及质量。     

多媒体在篮球专项技术教学中的作用分析

在当前社会发展中,多媒体教学已成了时代的主要潮流。体育教师应紧跟时代步伐,改变传统的教学模式,不断创新教学理念,来推动高校体育教育事业的不断发展。文章通过对多媒体在篮球专项技术教学中的作用分析,提出在篮球专项技术教学中多媒体的应用策略,旨在为丰富篮球专项技术教学方法、提高教学质量做依据。     

电子技术基础实验多媒体CAI课件的开发与应用

通过对电子技术基础实验多媒体CAI课件的开发与应用的介绍，阐述了该课件的组成和功能特点、开发过程及应用，论证了电子技术基础实验多媒体CAI课伯的可行性与优越性，并总结了对实验教学带来的积极意义。     

篮球中锋个人进攻与防守技术CAI多媒体教学课件的研制分析

篮球中锋个人进攻与防守技术CAI多媒体教学课件的研制的制作鉴于篮球中锋的特点，根据新时期的教学目标，依托现代多媒体技术，使篮球教学更加生动形象，丰富多彩。本文将运用CAI多媒体教学课件分析研制篮球中锋个人进攻与防守技术，使学生更好掌握篮球中锋方面技术知识。     

基于校园网的多媒体CAI软件的设计模式

新课程改革的深入和素质教育理念的提出,使得网络信息技术、计算机技术等方式在新时期教学中进行了有效性的应用,对于提高教学的质量和水平发挥出重要作用.本文主要就CAI软件早期设计模式、基于校园网多媒体CAI软件设计模式、应用的意义三个方面内容进行论述.     

教学课件设计与数据库技术的结合

CAI教学课件的设计过程中涉及到大量多媒体数据的处理和管理，这些数据在当前的课件中大都是由应用程序管理的，数据是程序的一部分，不具有独立性且高度冗余，管理效率和数据的利用率都很低。引入数据库技术设计CAI教学课件，是高效管理多媒体数据的一种行之有效的方法，又可保持CAI课件的优点。现以Authorware制作多媒体课件为例，介绍了将数据库技术和CAI教学课件设计相结合的有关方法。     

《汇编语言程序设计》CAI课件开发与制作

本文介绍《汇编语言程序设计》CAI课件开发与研制的思路，以及对多媒体辅助教学方式在汇编语言程序设计课程中应用的探讨。     

CAI在《电工基础》教学上的应用

CAI的优越性已在教学过程中展现出来，它能够优化课堂教学，提高教学效率，但是，我们在教学中大力推行多媒体的同时，应充分认识到它在整个教学中的辅助地位。     

多媒体动画在PoWerPoint课件中的应用

在多媒体课件制作中多媒体素材的应用很重要，也是课件成功与否的关键。PowerPoint软件简单、易学、易用、功能强大、易于修改，便于普通授课教师掌握，是一种简单的CAI课件制作工具。本文讨论了基于PowerPoint软件编制的传感器技术多媒体教学课件．及多媒体动画素材在PowerPoint课件中的应用方法。介绍了多媒体视频文件的在超级解霸软件中的剪辑方法和在PowerPoint课件中的插入方法，并详细介绍了利用控件工具箱将FLASH文件插入PowerPoint课件中的方法。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.