聚苯乙烯/六方氮化硼微波复合基板的制备与性能研究

针对高功率器件、高密度封装等微波通信领域对高性能微波复合基板的迫切需求，该文提出了一种将双螺杆造粒和热压成型结合的新技术，制备了以高抗冲聚苯乙烯(HIPS)为基体、六方氮化硼(h-BN)陶瓷为填料的高导热微波复合基板，并对基板的显微结构、热学性能和介电性能进行了全面表征。结果表明，采用大粒径(?25 μm)的h-BN(h-BN₂₅)比小粒径(?5 μm)的h-BN(h-BN₅)填充后更有利于提高复合基板的热导率(λ)，降低其介电损耗(tan δ)。随着h-BN₂₅质量分数(w(h-BN₂₅))从0增加至70%，HIPS/h-BN₂₅微波复合基板的λ从0.13 W·m^-1·K^-1提高到7.43 W·m^-1·K^-1(面内)和2.55 W·m^-1·K^-1(面间)，分别是纯HIPS的57倍和20倍，表明采用以上制备技术能实现h-BN在HIPS基体中的定向排列，构建有效的面内导热网络。同时复合基板的tan δ由7.3×10^-4降低至5.3×10^-4(10 GHz下)，热膨胀系数α从93.8×10^-6/K降至18.7×10^-6/K。填充w(h-BN₂₅)=70%的HIPS/ h-BN₂₅微波复合基板综合性能优异，10 GHz时，其介电常数ε_r=3.9，tan δ=5.3×10^-4，λ=7.43 W·m^-1·K^-1，α=18.7×10^-6/K，在微波通信领域具有良好的应用前景。     

薄膜光学常数的原位测定

薄膜的光学常数（折射率和消光系数）精度直接影响设计和制造的光学器件的性能。大多数光学常数的测定方法较为复杂,不能直接应用在镀膜过程中。提出了一种薄膜光学常数原位实时测量的方法,通过监测沉积材料的透射率可以快速准确地测量光学常数。测量了高吸收材料Si、低吸收材料Ta₂O₅和超低吸收材料SiO₂的近红外光学常数,用这种方法测得光学常数分别为n=3.22,k=4.6×10^-3,n=2.06,k=1.3×10^-3和n=1.46,k=6.6×10^-5。该方法适用于强吸收材料和弱吸收材料光学常数的测定,为在线精确测量薄膜的光学常数提供了一种有效的方法,对设计和制造高质量的光学器件具有重要意义。     

长/长波双色二类超晶格红外探测器研究

报道了长/长波双色二类超晶格红外焦平面探测器组件的研制。通过能带结构设计和分子束外延技术,获得了表面质量良好的长/长波双色超晶格外延材料。突破了长波超晶格低暗电流钝化、低损伤干法刻蚀等关键技术,制备出像元中心距30 μm的320×256长/长波双色InAs/GaSb超晶格焦平面探测器芯片。将芯片与双色读出电路互连,采用杜瓦封装,与制冷机耦合形成探测器组件。组件双波段50%后截止波长分别为7.7 μm（波段1）和10.0 μm（波段2）。波段1平均峰值探测率达到8.21×10¹⁰ cmW^-1Hz^1/2,NETD实现28.8 mK;波段2平均峰值探测率达到6.15×10¹⁰ cmW^-1Hz^1/2,NETD为37.8 mK,获得了清晰的成像效果,实现长/长波双色探测。     

平板介质的微波分裂腔法介电常数测试技术

为实现微波频段平板类介质材料的介电常数的无损测试,研究了分裂式圆柱形谐振腔测试方法。介绍了分裂式圆柱形谐振腔的电磁场分析理论,采用模式匹配技术实现了介质加载条件下腔内电磁场分布的精确求解,得到了腔体谐振频率与材料介电常数之间的准确关系。在理论分析的基础上,制作了空腔谐振频率为10 GHz的分裂式谐振腔,并与前期研制的闭式谐振腔进行对比测试,介电常数实部测量结果相对误差小于1%。与国外同类产品进行对比测试,介电常数实部结果基本一致,损耗角正切测量结果更接近于文献参考值。因此,微波分裂腔法能够实现平板介质板材的无损测量,具有准确度高,使用方便等突出优势,可在微波频段内实现介电常数为1～20,损耗角正切为1×10^-3～1×10^-5,板材厚度为0.1～2.0 mm的各类平板介质材料介电常数的准确测试。     

太赫兹频段基于NR迭代法的复介电常数提取

伴随着6G通信的发展,雷达遥感、检测成像等多个领域向太赫兹频段拓展,获取材料在该频段的介电常数显得愈发重要。本文基于NR迭代法提取了太赫兹频率下样品的复介电常数,分析了迭代法的初值选取对提取结果的影响。在325~500 GHz频段(Y频段)搭建了一套由矢量网络分析仪(VNA)、扩频模块和四抛物面镜组成的8f准光系统,实现散射参数S₂₁的自由空间测量。由电磁波传输模型推导出复介电常数与S₂₁之间的关系式,利用迭代法提取出了特氟龙(Teflon)、丙烯腈-丁二烯-苯乙烯共聚物(ABS)和聚甲基丙烯酸甲酯(PMMA)样品的复介电常数谱,与其他文献报道的结果一致,验证了系统和方法的有效性。     

高k HfLaO栅介质MoS2晶体管的性能研究

比较研究了HfO₂与HfLaO栅介质多层MoS₂场效应晶体管。实验结果表明,与HfO₂栅介质MoS₂晶体管相比,HfLaO栅介质MoS₂晶体管表现出更优的电性能。电流开关比高达1×10⁸,亚阈斜率低至76 mV/dec,界面态密度低至1.1×10¹² cm-2·eV-1,载流子场效应迁移率高达1×10⁹ cm²·V-1·s-1。性能改善的原因在于镧(La)对HfO₂的掺杂形成HfLaO化合物,减小栅介质薄膜的表面粗糙度,降低缺陷电荷密度,改善了栅介质/沟道界面特性,从而减小了界面态密度,抑制了库仑散射和界面粗糙散射。最终,提高了多层MoS₂晶体管的场效应迁移率,改善了晶体管的亚阈特性。     

工作波长为2.94 μm保偏空芯负曲率光纤

提出一种保偏空芯负曲率光纤,可用于传输工作波长为2.94 μm的中红外激光。首先通过调整y方向包层管的厚度和嵌套管到包层管内径的最大距离使 y方向偏振模式与包层管表面模式发生微弱耦合,再通过优化纤芯直径和包层管的外径诱导y方向偏振模式与包层管表面模式发生相位匹配,造成y方向偏振模式泄露出纤芯。包层管间的缝隙引导高阶模式泄露出纤芯,而x方向偏振模式因包层管和嵌套管的厚度具有抑制耦合的作用而保持低损耗传输。最终得到一种工作波长为2.94 μm的保偏空芯负曲率光纤,x方向偏振模式的限制损耗为2.8×10^-2 dB/m,偏振消光比大于2×10³,高阶模抑制比大于100,双折射为1.4×10^-5。当光纤y方向弯曲,且半径为25 cm时,弯曲损耗为0.62 dB/m。     

优质雪崩光电二极管

美国麻省理工学院和林肯实验室采用了倒置台面n⁺-InP/n-GaInAsP/n-InP/P⁺-InP结构,研制出响应到1.25微米的优质雪崩光电二极管。测量得到均匀雪崩增益为700,当M=10时,暗电流密度为3×10^-6安/厘米²,过量噪声因数约为3。     

具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN 毫米波MIS-HEMTs

文章在超薄势垒AlN/GaN异质结构上采用金属有机化学气相沉积（MOCVD）原位生长SiN_x栅介质,成功制备了高性能的SiN_x/AlN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMTs）。深能级瞬态谱（DLTS）技术测试SiN_x/AlN的界面信息,显示其缺陷能级深度为0.236 eV,俘获截面为3.06×10^-19 cm^-2,提取的界面态密度为10¹⁰~10¹² cm^-2eV^-1,表明MOCVD原位生长的SiN_x可以有效降低界面态。同时器件表现出优越的直流、小信号和噪声性能。栅长为0.15 μm的器件在2 V的栅极电压（V_gs）下具有2.2 A/mm的最大饱和输出电流,峰值跨导为506 mS/mm,最大电流截止频率（f_T）和最大功率截止频率（f_MAX）分别达到了65 GHz和123 GHz,40 GHz下的最小噪声系数（NF_min）为1.07 dB,增益为 9.93 dB。V_ds = 6 V时对器件进行双音测试,器件的三阶交调输出功率（OIP3）为32.6 dBm,OIP3/P_dc达到11.2 dB。得益于高质量的SiN_x/AlN界面,SiN_x/AlN/GaN MIS-HEMT显示出了卓越的低噪声及高线性度,在毫米波领域具有一定的应用潜力。     

超低损耗高双折射空芯反谐振太赫兹光子晶体光纤

本文提出了一种以环烯烃共聚物（Cyclic Olefin Copolymer, COC）为基底的超低损耗高双折射空芯反谐振太赫兹光子晶体光纤,该光纤的包层由两组（共六个）无节点嵌套管组成。采用时域有限差分法（Finite Difference Time Domain method, FDTD）结合完美匹配层（Perfectly Matched Layer, PML）边界条件对其导波特性进行分析。仿真结果表明,在0.8~1.35 THz范围内,总传输损耗小于0.1 dB/m,双折射大于2.12×10^-5,色散在±0.027 ps/THz/cm。在1.12 THz处,最低总传输损耗仅为0.543×10^-2 dB/m,双折射值为2.06×10^-4。同时,分析了该光纤的弯曲性能,表明在y方向,当弯曲半径超过19 cm时,弯曲损耗小于0.1 dB/m,具有良好的弯曲性能。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.