工作波长为2.94 μm保偏空芯负曲率光纤

提出一种保偏空芯负曲率光纤,可用于传输工作波长为2.94 μm的中红外激光。首先通过调整y方向包层管的厚度和嵌套管到包层管内径的最大距离使 y方向偏振模式与包层管表面模式发生微弱耦合,再通过优化纤芯直径和包层管的外径诱导y方向偏振模式与包层管表面模式发生相位匹配,造成y方向偏振模式泄露出纤芯。包层管间的缝隙引导高阶模式泄露出纤芯,而x方向偏振模式因包层管和嵌套管的厚度具有抑制耦合的作用而保持低损耗传输。最终得到一种工作波长为2.94 μm的保偏空芯负曲率光纤,x方向偏振模式的限制损耗为2.8×10^-2 dB/m,偏振消光比大于2×10³,高阶模抑制比大于100,双折射为1.4×10^-5。当光纤y方向弯曲,且半径为25 cm时,弯曲损耗为0.62 dB/m。     

基于模式耦合的低弯曲损耗大模场带隙光纤研究

提出一种大模场带隙光纤,由排布在正方结构网 格中的高折射率介质柱形成导光机制。采用有 限元法分析了直光纤与弯曲光纤下的模式损耗与模场面积等特性。研究结果表明:这种光纤 具有较宽的带 隙,可同时支持基模和高阶模的传输,两种模式的泄漏损耗均低于1×10－3 dB/m。当光纤弯曲时,其包层会 产生具有强泄露损耗的包层模,并在一定的弯曲半径下与纤芯的高阶模发生强耦合。当弯曲 半径在15～20cm 之间时,基模弯曲损耗小于0.01dB/m,而高阶模损耗大于1dB/m, 因而光纤可以经弯曲实现大模场单模传 输。在1064nm波长处,其直光纤的基模模场面 积为1319.62μm², 而在弯曲状态下的模场仍可达到975.00μm²以上,因而可实现大 模场的低弯曲损耗传输。     

具有亚波长模式局域性的全介质反槽波导及其与输入/输出光纤的高效耦合

由于金属固有的欧姆损耗,表面等离子体波导通常具有较大的传输损耗。基于此,提出了一种全介质反槽波导结构,该波导可以同时实现亚波长模式局域性和理论上无损耗的传输,归一化模式面积可以达到3.4×10^-2。另外,为了实现该小尺寸反槽波导与输入/输出光纤的高效耦合,提出了一种高效的耦合方案,耦合效率可以达到92.7%,在y和z方向上1 dB损耗的耦合偏差均约为2 μm。     

一种高双折射低损耗大负色散光子晶体光纤的设计

设计了一种新型光子晶体光纤结构,该光纤包层包含六个由不同形状空气孔组成的轴对称的三角晶格,并在中间沿x轴引入一排大小不同的椭圆空气孔,实现了高双折射、低限制性损耗和大负色散特性。构建了该光子晶体光纤的有限元模型,基于该模型研究了中心两个空气孔的偏转角对LP₀₁模和LP₁₁模的模场分布、双折射系数、限制性损耗和色散系数的影响。研究表明,在偏转角α=90°时该型光纤具有最优性能,即LP₀₁模可在波长为1550nm处获得高达3.618×10-2的双折射、仅为1.999×10-14dB/m的限制性损耗以及低至-764ps/(nm·km)的大负色散,其综合传输特性优于现有典型光子晶体光纤。     

2~5 THz宽频段多孔纤芯高双折射太赫兹光子晶体光纤

提出了一种以Topas环烯烃共聚物为基底,采用级联六边形单元多孔纤芯结构的宽频带高双折射太赫兹光子近10~(-1))的超高双折射,10~(-12)dB/cm的超低限制损耗,以及小于1 cm~(-1)的有效材料吸收损耗。此外,所提出的结构在2.25～5 THz的频带内表现出±0.2 ps/THz/cm的近零平坦色散。该光纤所实现的双折射值不仅是迄今已知太赫兹聚合物光纤中最高的,而且其新颖的多孔纤芯结构设计有效降低了太赫兹波的传输损耗。同时,光纤结构均采用圆形空气孔,便于工程制备,该工作对今后太赫兹光子晶体光纤的发展具有一定的参考价值。     

八边形空气孔环绕-双模大模场面积多芯光纤

为实现多芯光纤的严格双模传输和大模场面积, 将多芯光纤引入空气孔并排列成八 边形结构,利用COMSOL软件建立该光纤的电磁场模型,再采用有限元方法系统地分析相 对孔径大小、纤芯与包层折射率差和纤芯之间的间距等3个结构参数对光纤模式特性及有 效模场面积的影响,最后讨论了不同弯曲半径下光纤的弯曲损耗。根据分析结果并结合归一 化频率常数找到合适的结构参数,此时光纤的基模模场面积在平直状态下可达到1730 μm², 当弯曲半径大于0.45 m时,弯曲损耗小于10－3 dB/m,基模模场面积仍可达到1685 μm²。该 光纤保持少模传输并实现了大模场面积和低弯曲损耗,在大容量、高功率光纤传输系统中具 有广阔的应用前景。     

长/长波双色二类超晶格红外探测器研究

报道了长/长波双色二类超晶格红外焦平面探测器组件的研制。通过能带结构设计和分子束外延技术,获得了表面质量良好的长/长波双色超晶格外延材料。突破了长波超晶格低暗电流钝化、低损伤干法刻蚀等关键技术,制备出像元中心距30 μm的320×256长/长波双色InAs/GaSb超晶格焦平面探测器芯片。将芯片与双色读出电路互连,采用杜瓦封装,与制冷机耦合形成探测器组件。组件双波段50%后截止波长分别为7.7 μm（波段1）和10.0 μm（波段2）。波段1平均峰值探测率达到8.21×10¹⁰ cmW^-1Hz^1/2,NETD实现28.8 mK;波段2平均峰值探测率达到6.15×10¹⁰ cmW^-1Hz^1/2,NETD为37.8 mK,获得了清晰的成像效果,实现长/长波双色探测。     

具有低噪声及高线性度的高性能MOCVD-SiNx/AlN/GaN 毫米波MIS-HEMTs

文章在超薄势垒AlN/GaN异质结构上采用金属有机化学气相沉积（MOCVD）原位生长SiN_x栅介质,成功制备了高性能的SiN_x/AlN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMTs）。深能级瞬态谱（DLTS）技术测试SiN_x/AlN的界面信息,显示其缺陷能级深度为0.236 eV,俘获截面为3.06×10^-19 cm^-2,提取的界面态密度为10¹⁰~10¹² cm^-2eV^-1,表明MOCVD原位生长的SiN_x可以有效降低界面态。同时器件表现出优越的直流、小信号和噪声性能。栅长为0.15 μm的器件在2 V的栅极电压（V_gs）下具有2.2 A/mm的最大饱和输出电流,峰值跨导为506 mS/mm,最大电流截止频率（f_T）和最大功率截止频率（f_MAX）分别达到了65 GHz和123 GHz,40 GHz下的最小噪声系数（NF_min）为1.07 dB,增益为 9.93 dB。V_ds = 6 V时对器件进行双音测试,器件的三阶交调输出功率（OIP3）为32.6 dBm,OIP3/P_dc达到11.2 dB。得益于高质量的SiN_x/AlN界面,SiN_x/AlN/GaN MIS-HEMT显示出了卓越的低噪声及高线性度,在毫米波领域具有一定的应用潜力。     

高双折射光子晶体光纤设计及分析

为进一步提高光纤传输特性,设计了两种具有高双折射的新型光子晶体光纤, 构建了光纤的模型。通过有限元法对光纤模型进行数值计算并研究了光纤结构参数对基模色 散、双折射、限制性损耗、非线性系数等传输特性的影响。研究表明,在波长为1550 nm处, 本文所设计的两种光纤分别可获得高达3.676×10－2和4.477×10－2的双折射,两种光 纤的限制 性损耗都保持在10－8 dB/m数量级及以下,且都具有较低的非 线性系数。因此,光纤传输性 能的优化使得其更有利于光信号的长距离稳定传输,可应用于高速光通信、光纤传感、色散 补偿等领域。     

新型太赫兹光子晶体OAM光纤设计

太赫兹通信兼具微波通信和光波通信的优势,是解决通信容量紧缺难题的最有效技术手段之一。针对太赫兹波段吸收损耗严重及抗外在扰动差,难以支持长距传输问题,设计了一种基于环形光子晶体光纤(PCF)结构的新型太赫兹光纤。以现有常见材料作为光纤基底材质,通过创新光纤结构中空气孔排布方式,抵消材料高吸收损耗,以支持高性能轨道角动量(OAM)模式传输。选择最优参数,实现6个OAM模式群的高模式质量、低限制损耗和宽带宽的稳定传输。在0.2~0.9 THz宽波段内,实现模式纯度超过88.9%,限制损耗小于10^-7 dB/m。通过软件仿真实验设计,解决了太赫兹与OAM技术相结合的关键问题,为模分复用(MDM)技术在太赫兹通信系统的应用奠定了理论研究基础。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.