高性能可扩展公钥密码协处理器研究与设计

 本文提出了一种高效的点乘调度策略和改进的双域高基Montgomery模乘算法,在此基础上设计了一种新型高性能可扩展公钥密码协处理器体系结构,并采用0.18μm 1P6M标准CMOS工艺实现了该协处理器,以支持RSA和ECC等公钥密码算法的计算加速.该协处理器通过扩展片上高速存储器和使用以基数为处理字长的方法,具有良好的可扩展性和较强的灵活性,支持2048位以内任意大数模幂运算以及576位以内双域任意椭圆曲线标量乘法运算.芯片测试结果表明其具有很好的加速性能,完成一次1024位模幂运算仅需197μs、GF(p)域192位标量乘法运算仅需225μs、GF(2^m)域163位标量乘法运算仅需200.7μs.     

大数模乘硬件设计与FPGA高速实现

在公钥密码体制中,都涉及到大数模乘运算,其实现效率将直接影响整个系统的响应速度。将大数模乘运算用专用集成电路快速而又低成本地实现,将有助于电子商务的快速推广。该文针对应用很广的RSA公钥密码算法,提出了一种高基(2H进制)的大数模乘硬件实现方法。这种设计方法通过合理增加部分硬件开销,动态构造并行加法并配用初始化存储数据表提高模乘运算的时空效率。作者已成功地在Altera公司的Stratix-epls10f780c6芯片上实现512比特大数乘法运算,仅需437.5ns,是目前公开文献上FPGA实现速度的10倍左右。     

SM2高速双域 Montgomery 模乘的硬件设计

作为由国家密码管理局公布的SM2椭圆曲线公钥密码算法的核心运算,模乘的实现好坏直接决定着整个密码芯片性能的优劣．Montgomery模乘算法是目前最高效也是应用最为广泛的一种模乘算法．本文基于Mont-gomery模乘算法,设计了一种高速,且支持双域（GF（p）素数域和GF（2m ）二进制域）的Montgomery模乘器．提出了新的实现结构,以及一种新型的W allace树乘法单元．通过对模块合理的安排和复用,本设计极大的缩小了时间消耗与硬件需求,节省了大量的资源．实现256位双域模乘仅需0．34μs ．     

面向多曲线的通用高性能ECC处理器设计

该文针对广泛应用的TLS1.3协议，提出了一种高性能的椭圆曲线密码处理器.该处理器支持TLS1.3协议中定义的两类素数域椭圆曲线的通用模数.通过对高基蒙哥马利算法的改进，提出了一种支持521 bit及以下位宽的模乘运算单元，并提出了一种双模乘单元并行结构的标量乘法器.基于该结构在两类椭圆曲线下设计了雅阁比坐标系下并行的点运算时序排布，使模乘单元的利用率在不同点运算情况下达到100%,95.4%和86.5%.与现有设计相比，本文中标量乘法运算消耗的周期更少，运算单元利用率更高，在相似的时间面积乘积前提下，具有更强的通用性和可配置性的优势.在TSMC 55 nm CMOS工艺下达到454 MHz的时钟频率，等效逻辑门数851k,Secp256r1曲线的标量乘运算速度为31 230 times/s.     

RSA密码算法的可重构设计与实现

本文对RSA密码算法的实现和可重构性进行了分析,在对模幂模块和模乘模块进行了可重构设计的基础上,提出一种可重构RSA硬件架构,使其能够适配256bit、512bit、1024bit、2048bit四种不同密钥长度的应用。RSA可重构设计在FPGA上进行了实现与测试,结果表明,工作在200MHz时钟时,2048bit密钥长度RSA在最坏情况下数据吞吐量可达46kb／s,能够满足高性能的信息安全系统对RSA算法的加密速度要求。     

高速双有限域加密协处理器设计

文章提出了一种能够同时在有限域GF(P)和GF(2^m)中高速实现椭圆曲线密码算法(ECC)的协处理器。该协处理器能够高速完成椭圆曲线密码算法中各种基本的运算。通过调用这些基本的模运算指令，可以实现各种ECC上的加密算法。该协处理器支持512位以下任意长度的模运算。协处理器工作速度很快，整个协处理器综合采用了多种加速结构和算法并采用了流水线结构设计。根据物理综合的结果，协处理器可以工作在300MHz的频率，运算时间比此前的一些同类芯片快4到10倍左右。     

长整数模运算的体系结构研究与实现

随着计算机网络技术的迅猛发展和网络技术在各行各业中的广泛应用,信息安全问题日益突出.密码技术可以有效的保证信息的保密性、完整性、可用性和抗抵赖性.密码技术,特别是公钥密码技术中的RSA算法和椭圆曲线(Ellipse Curve Cryptography, ECC)算法的硬件电路级实现,代表着一个国家信息安全保障的水平.主要研究工作为长整数模运算的体系结构研究与实现.对几种模乘运算算法进行研究,并对线性和高基两种电路体系结构进行比较.     

小面积、低能耗的GF（2^m）域ECC模运算VLSI实现

以面积、能耗为优先准则,研究了GF(2m)域椭圆曲线密码(ECC)模运算VLSI的实现.选择GF(2163)上固定多项式基,引入了简单有效的快速模平方算法和改进的模逆算法,利用串行结构分别实现了模乘、模平方与模逆模块.基于UMC 0.25μm 1.8V工艺库的仿真结果表明,提出的串行模乘、快速组合逻辑模平方和快速模逆VLSI实现方式,通过牺牲域多项式灵活性,能够有效地减小面积、降低能耗,适合于资源受限的ECC系统.     

改进的高速可伸缩双域模乘器设计及实现

基于多精度双域Montgomery模乘算法实现了一个可伸缩双域模乘器.模乘器处理单元采用新颖的三时钟结构代替传统的双时钟结构缩短关键路径延时,提高了时钟频率.使用SMIC0.18μm COMS标准单元工艺库综合后,模乘器的时钟频率最大能达到240MHz,计算256bit有限域GF(p)上的模乘只需要0.23μs.     

双有限域模乘和模逆算法及其硬件实现

有限域上的模乘和模逆运算是椭圆曲线密码体系的两个核心运算。该文在Blakley算法的基础上提出一种radix-4快速双有限域模乘算法,该算法采用Booth编码技术将原算法的迭代次数减少一半,并利用符号估计技术简化约减操作;在扩展Euclidean求逆算法的基础上提出一种能够同时支持双有限域运算的高效模逆算法,该算法不仅避免了大整数比较操作,而且提高了算法在每次迭代过程中的移位效率。然后针对这两种算法特点设计出一种能够同时完成双有限域上模乘和模逆操作的统一硬件结构。实现结果表明:256位的模乘和模逆统一硬件电路与同类型设计相比较,在电路面积没有增加的情况下,模乘运算速度提高68%,模逆运算的速度也提高了17.4%。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.