一种新型C-DOCSIS网络系统

C-DOCSIS技术作为同轴接入网络技术,存在覆盖用户少、户均成本高的缺陷。本文把C-DOCSIS局端从同轴输出设备升级为光输出设备,从而使C-DOCSIS技术升级为HFC接入网技术,结合RFoG光传输技术进一步优化网络结构,构建高指标、低成本的新型C-DOCSIS网络系统。     

一种集成式CMC一体机在HFC接入网中的应用

C-DOCSIS相关技术标准的发布极大地促进了其在HFC网络中的部署。但C-DOCSIS系统头端设备覆盖规模和光纤深化的趋势之间存在矛盾。本文从带宽模型、带宽容量、频率资源三个方面进行分析，提出了一种集成式的CMC一体机的设备架构，兼顾了覆盖规模和投资成本，为C-DOCSIS在HFC网络中的大规模部署提供了有效的解决方案。     

C-DOCSIS边缘宽带接入技术

一 C-DOCSIS边缘接入技术产生的背景 在传统HFC网络上。利用CMTS和CM设备，采用DOCSIS协议。能够实现基于HFC网络的宽带数据传输，其典型拓扑结构如图7所示。     

广电行业采用CCMTS技术提升网络带宽

本文主要介绍C-DOCSIS系统以及CCMTS对原有CMTS+CM模式的改进,以珠江数码推行的PON+CCMTS方案为实例,提出了采用CCMTS技术提升广电HFC网络带宽的可行性.     

C-DOCSIS技术应用和发展展望

本文详细介绍了C-DOCSIS技术的架构和性能特点,并分析了目前C-DOCSIS技术在应用过程中面临的不同方面的问题。并在此基础上,根据DOCSIS技术的最新发展,概括了下一代C-DOCSIS技术需要重点投入资源开展研究的技术方向。     

CWDM无源波分技术及其在广电网络中的应用

光纤被认为是迄今为止最优的传输媒质,被各运营商利用来突破接入带宽"瓶颈"。广电在部署HFC网络的同时也进行了FTTH网络的建设,本文针对OLT下移时,在FTTH网络或C-DOCSIS网络应用中遇到的光链路资源不足的情况,结合接入网与城域网的业务与带宽需求,着重介绍一种CWDM无源波分技术及其系统构造,这种系统及其技术能够有效地解决光纤资源不足无法开展业务的问题,并提高OLT下移所需的上联端口带宽。为广电网络建设提供更加丰富可靠的参考与解决方案。     

融合C-DOCSIS体系的综合网管设计与实现

随着C-DOCSIS技术逐步在广电双向网络改造中的应用,在原有综合网管平台上搭建出运营级的C-DOCSIS网管体系尤为重要.通过分析C-DOCSIS技术组网方案,在结合原有DOCSIS网络管理架构的基础上,提出相互融合的综合网管搭建体系,明确在新融合网管系统中分层结构和功能描述,重点介绍C-DOCSIS配置管理、告警管理、诊断查询等特色部分,分享项目实施经验.     

博通:C-DOCSIS EoC最大程度保护现有投资

"C-DOCSIS的标准征求意见稿日前已经发布,该标准通过后将结束我国NGB领域的标准之争,从而促进NGB建设全面提速。"北京数码视讯旗下鼎点视讯科技有限公司总经理汝继刚日前透露。一些厂商则认准了C-DOCSIS的市场前景,已经开始提前行动,部署基于C-DOCSIS的EoC方案。比如Broadcom(博通)公司执行副总裁兼宽带通讯事业部总经理Daniel A.Marotta近日表示,北京数码视讯正在为广电运营商部署博通基于C-DOCSIS的EoC的有线电视架构,而杭州华数也在与杭州蓝联合作,部署了博通的C-DOCSIS EoC方案。     

鼎点视讯CCMTS设备中标山西长治广电采购项目

正近期,数码视讯集团旗下,国内领先的三网融合系统集成商——鼎点视讯科技有限公司CCMTS系列产品在长治市太行广播电视网络有限公司HFC网络设备采购项目中成功中标。山西省长治市共有40万左右的数字电视用户,经过长时间的技术考量,最终采用C-DOCSIS的技术路线实施本市广电双向网络改造项目。鼎点视讯CCMTS凭借其高性价比、多业务、高带宽、丰富的管理手段、成熟的市场案例、     

基于C-DOCSIS的分布式CMTS方案助力广电运营商轻松实现宽带部署——珠江数码D-CMTS现场会在广州成功召开

正8月1日,"耀舞珠江—C-DOCSIS金牌实践珠江数码D-CMTS现场会"在广州隆重召开,珠江数码携手华为,与来自全国各地广电运营商代表共同分享了C-DOCSIS的应用情况和实践经验,为双向改造的顺利实施搭建了广阔的交流平台,提供了有力的技术支持。为推动信息产业发展,国家工信部明确提出了"宽带中国"战略。宽带接入是实现三网融合的关键因素,已成为行业内最为关注的热点。在信息化高速发展的今天,三网融合这个曾经的理想化模型依托宽带技术已经逐步转化为现实,这就     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.