P—TCM在卫星移动通信信道上的性能

实用化网格编码调制方案能够利用同一芯片实现不同码率的网格码之编译码过程，其性能在加性斯白噪声信道上与Ｕｎｇｅｒｂｏｅｃｋ ＴＣＭ码玎比差别不大。本文针对编码率为２／３的６４状态－ＰＴＣＭ码，从理论上计算了在相干检测和差分检测两种情况下，该码在Ｒｉｃｉａｎ信道上和轻微遮挡的Ｒｉｃｉａｎ信道上的误比特率上，下限或渐进曲线，并且给出了相应的计算机仿真结果。     

移动卫星信道中的TC-MDPSK特性界

本文基于Ｒｉｃｒ－Ｌｏｇｎｏｒｍａｌ联合分布的两种信道模型,定性地分析了移动卫星信道中的ＴＣ－ＭＤＰＳＫ特性界,推导出了适合这两种信道模型的一种新的特性表达式,讨论了８Ｕ－ＴＣ－ＭＤＰＳＫ方案的误比特率,计算机模拟显示出,本文推导的方法不仅简便,而且得到的特性界比已有的界紧,能够较好地反应这类信道的ＴＣ－ＭＤＰＳ特性。     

网格编码MQAM直扩多址系统的性能分析

本文将非恒包络高效网格编码调制ＴＣ－ＭＱＡＭ应用于瑞利慢衰落信道下的直接序列扩频多址系统中。针对衰落信道和ＴＣ－ＭＱＡＭ的特点，提出了一种分析ＴＣ－ＭＱＡＭ用于衰落信道下ＤＳ／ＳＳＭＡ系统性能的方法，数值模拟表明在系统用户数、用户信源比特速率以及码相同的条件下，本文所构造的非恒包络１／４ＴＣ－１６ＱＡＭ性能优于同状态数３／４ＴＣ－１６ＱＡＭ和恒包络２／３ＴＣ－８ＰＳＫ。这说明通过增大最小分支数等适     

时间色散信道中格形编码的正交频分复用(TC-OFDM)技术

本文提出了一种格形编码的正交频分复用（ＴＣ－ＯＦＤＭ）方案，研究把正交频分复用（ＯＦＤＭ）和格形编码（ＴＣＭ）有机地结合，来克服时间色散信道中的频率选择性和多径衰落。文中对码率２／３格形编码的８ＤＰＳＫ－ＯＦＤＭ在时间色散信道中的误码率性能进行了分析和模拟，并讨论了不同正交载波数情况下格形编码的设计。结果表明，在比特误码率ＢＥＲ为１０－３时采用ＴＣ－ＯＦＤＭ方案与未编码系统相比可以提供６ｄＢ的编码增益。     

高TcGdBa2Cu3O7—δ薄膜双晶结光探测器

研制了具有约瑟夫逊效应的高ＴｃＧｄＢａ２Ｃｕ３Ｏ７－δ薄膜双晶晶界结，按照光助隧道效应的原理我们用双晶结进行光探测，光源是波长为０．６３２８μｍ的Ｈｅ－Ｎｅ激光器，系统观测了高Ｔｃ ＧｄＢａ２Ｃｕ３Ｏ７－δ双晶结的光响应特性，最好的结果为：噪声等效功率ＮＥＰ＝４．３×１０＾－１４ＷＨｚ＾－１／２，归一化探测率Ｄ＾８＝１．２×１０＾１０ｃｍＨｚ＾１／２Ｗ＾－１，响应率Ｒｖ＝３．５×１０＾７Ｖ／Ｗ，     

带有分集的RS码非相干混合DS-SFH扩频通信系统性能分析

本文针对部分带宽噪声干扰、多址干扰和高斯白噪声等多种干扰以及Ｒｉｃｉａｎ信道衰落存在环境下,编码与非编码的异步非相干ＭＦＳＫ调制混合ＤＳ－ＳＦＨ扩频通信系统性能进行了分析、计算和比较。本文分析的编码为前向纠错编码,包括ＲＳ（Ｎ,Ｋ）码,带有分集的ＲＳ（Ｎ,Ｋ）码。与此同时分析和讨论了分集、Ｒｉｃｉａｎ衰落以及部分带宽噪声干扰、多址干扰等对系统性能的影响,得到一些重要结果。     

30路FM－TV光纤CATV传输系统

本文介绍一个设计研制的能传输３０路ＦＭ－ＴＶ光纤系统。系统的频率范围是１～２．５ＧＨ２。对光纤键路的光发射机设计作了详细的论述；系统的信道间隔设计成非等间隔的频率配置，减少了落入信道的二阶和三阶失真产物。实际测试系统的ＣＮＲ＞１８ｄＢ，ＣＳＯ、ＣＴＢ优于５０ｄＢｃ，传输距离＞３０ｋｍ。系统可以用于ＣＡＴＶ的干线或分配传输。     

C6M—C38 COMMANDER 6 调制器（3）

（上接第１０期）附录Ａ技术指标Ｃｏｍｍａｎｄｅｒ６调制器技术指标视频标准标准基带输入电平范围０．５～２．０ＶＰ－Ｐ,用于８７．５％调制度编码视频输入电平１．０ＶＰ－Ｐ,额定８７．５％调制度视频输入阻抗７５Ω标称视频输入回传损耗３０ｄＢ最小Ｒ系数２Ｔ脉冲　３％最大Ｓ／Ｎ比率６０ｄＢ最小频率响应±０．７５ｄＢ最大→５．０ＭＨｚ微分增益±０．３５ｄＢ在８７．５％调制度微分相位３％Ｐ－Ｐ最大斜率／线路时间失真１．０％最大　　音频标准输入电平范围－１０～＋１０ｄＢｍ输入阻抗６００Ω平衡频率响应±１．０ｄＢ…     

DC-4数字静物摄像机

Ｒｉｃｏｈ公司推出一种ＤＣ－４数字静物摄像机，具有３个光学快速变焦距透镜和录音能力。售价１０８０００日元（合７７７美元）。同时推出的ＤＣ－４Ｔ，带有２个光学快速变焦距透镜，标价７９８００日元（合５７４美元）。两机都用１３２０００像素的ＣＣＤ，具有自动聚焦功能。状态转化键简化操作过程。ＤＣ－４把图像记录在４ＭＢ的ＳｍａｒｔＭｅｄｉａ卡上，能储存７０幅图像，而ＤＣ－４Ｔ用２ＭＢ卡，储存３５幅图像。DC-4数字静物摄像机@木子     

用于D－3格式录像机的一种新型8－14信道编码方式

新型８－１４信道编码技术适合于数字录像机高密度记录。该编码将８比特数据变换为１４比特的记录数据，且ＤＳＶ（数据总和变化）最大绝对值为７，最小记录波长比Ｓ－ＮＲＺ（ＳｃｒａｍｂｌｅＮＲＺ码，Ｄ－１录像机采用）和Ｍ２（Ｍｉｌｌｅｒ２码，Ｄ－２录像机采用）编码长１４％，记录带宽窄１２．５％。其优点是：简化了记录，重放均衡，采用方位角记录，对误码检测无误差传播。测试结果表明；重放信号比Ｓ－ＮＲＺ和Ｍ２的Ｓ／Ｎ（信噪比）高２．８ｄＢ。目前，Ｄ－３格式ＶＴＲ中已采用了８－１４信道编码方式。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.