VDSL上行链路功率回馈解决方案

上行链路功率回馈是VDSL（very high-speed digital subscriber lines）系统中的关键技术，它用于抵消同一电缆中短线对长线引起的严重的远端串扰。文中首先对串扰做出分析，然后重点介绍了5种UPBO（upstream power back-off methods）的方案。最后，对多种UPBO方案的兼容性问题，描述了一种全球统一的理想接收功率谱密度的方案。     

低功率电路的确定

文章探讨了确定低功率电路的三种方法(可变电阻器法、计算法、EDA法)及每种方法的优缺点，并运用计算法对两种基本电路进行分析，给出了可变电阻消耗功率最大的条件和简化分析低功率电路的方法。     

浅谈TDMA和CDMA的功率电平测量

功率电平是TDMA、CDMA无线通信网络中最基本的参数。文中叙述了利用几种常用传统仪器测量TDMA(GSM)和CDMA功率电平(传导功率)的结果及误差分析,介绍了TDMA(GSM)、CDMA基站功率等级配置及误差容限,重点分析了TDMA(GSM)、CDMA(IS-95)的功率电平特征及测量方法,简述了复合数字调制格式功率计的技术性能和特点,并与矢量信号分析仪的测量结果进行了比较。     

移动衰落信道中的自适应OFDM调制

在宽带移动OFDM(正交频分复用)系统中，不同的子信道经受不同的信道衰落，具有不同的传输能力。若采用固定速率调制方案，信道容量和发送功率未能获得充分应用。自适应调制技术能充分利用信道容量和信号功率，满足不同传输速率和服务质量的要求。研究了一种适用于宽带移动OFDM系统的自适应算法。在平均发送功率不变务件下，算法根据子信道的衰落特性，自适应地分配子信道中数据比特，选择不同的信号星座和发送功率，使得系统的功率和频谱效率达到最佳。首先推导了在平均发送功率受限条件下，瑞利衰落信道中最大频谱效率；其次，分析了在给定误比特率(BER)条件下，采用连续功率、连续星座MQAM(多进制正交幅度调制信号)调制的最大功率频谱效率，在此基础上提出适用于实际系统的离散功率、离散星座MQAM调制算法；最后进一步优化系统的功率密度谱。计算机模拟表明：该算法能明显地提高移动OFDM系统的频谱效率。     

低Rds(on)P沟道技术

功率MOSFET常用于便携和无线产品中，其应用包括电池保护、负载管理和DC-DC转换等。对于这些应用，功率MOSFET最重要的特性便是其漏极－源极导通电阻Rds(on)。Rds(on)较小的功率MOSFET能够延长电池寿命，提高功率转化效率。同时，便携产品(如手机以及PDA等)的尺寸也在缩小，因此需要减小功率MOSFET的封装尺寸。近年来，为同时减小Rds(on)和封装尺寸，生产这些功率MOSFET的硅技术有了很大的改进，功率MOSFET是典型的立式器件，漏极位于芯片的底部，源极和栅极位于上部表面。功率MOSFET经两次扩散过程制成，先进行一次体…     

基于单个自适应神经元的CDMA反向功率控制算法

CDMA(码分多址)是现代移动通信中的一项重要技术。文章从分析CDMA移动通信的“远近效应”问题着手，提出了一种基于单个自适应神经元(Adaptive Neuron)的反向闭环功率控制算法。该方法能够平滑信道衰落的影响，使基站接收到的小区中所有用户的信号功率基本相等，从而克服反向链路功率控制的“远近效应”并增加系统容量。与传统的固定步长功率控制方法进行仿真比较的结果显示，这种算法具有更快的响应时间，更小的超调量和跟踪误差。     

高功率CO2波导激光器

本文介绍一台CO2波导激光器，输出功率达39.5瓦(51瓦/米)。这两个数值比以前报导过的都大。提出并讨论了有关输出功率与温度关系的数据。对此进行了理论分析，根据分析求得在最大输出功率的情况下，小信号增益(0.22厘米^-1)和饱和功率（35瓦）的数值。结果表明，分布损耗的假定比反射镜处集中损耗的假定更加与激光输出的观测值符合。     

红外双幅度脉冲间隔调制通信系统性能分析

提出一种新的调制方法——双幅度脉冲间隔调制(DAPIM)．研究了采用该调制方法的红外通信系统在加性高斯白噪声情况下的性能，对DAPIM的符号结构、带宽、功率谱和误码率特性等方面进行了分析，并与开关键控(OOK)、脉冲位置调制(PPM)和脉冲间隔调制(PIM)等调制方式做了比较．DAPIM具有较好的带宽和功率综合特性．对于：DAPIM，符号位数M=5或6是较好的选择。     

多元位置相移键控调制功率谱的优化

该文针对影响多元位置相移键控(MPPSK)调制信号功率谱旁瓣电平的离散线谱杂散，分析出MPPSK调制信号的频谱特性，找出了线谱分布规律，提出了波形优化法和多元满位置法来抑制 MPPSK 功率谱中的线谱杂散；设计了两类不同的解调器对两种功率谱优化了的 MPPSK 信号进行解调；从功率谱特性和解调性能方面，对两种方法进行了仿真验证和分析；结果表明，优化后的调制信号功率谱旁瓣电平低，线谱杂散被抑制，-40 dB带宽分别被紧缩了73.72%和43.72%，相同误码率指标下，波形优化法解调所需信噪比要比多元满位置法节省0.3~0.7 dB，表明了这两种方法在功率谱优化中的可行性和有效性。     

电力电子的高频数字控制

电力电子技术的应用范围极广——从亚毫瓦(小于10^3瓦)半导体芯片上的功率管理到几百兆瓦(大于10^8瓦)电动机传动或电力系统用的功率变换器，这些不同的应用需要在特定的工作环境下，将输入或输出的静态和动态特性按要求调整，同时功耗要尽可能低。为了满足这些要求，采用了由无源元件(电容器和电感器)和用作开关的功率半导体器件组成的开关型功率变换器，通过对功率半导体器件的通态／断态的控制来达到调整的日的。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.