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闩锁是集成电路结构所固有的寄生效应,这种寄生的双极晶体管一旦被外界条件触发,会在电源与地之间形成大电流通路,导致整个器件失效。文章较为详细地阐述了一种Bipolar结构中常见的闩锁效应,并和常见CMOS结构中的闩锁效应做了对比。分析了该闩锁效应的产生机理,提取了用于分析闩锁效应的等效模型,给出了产生闩锁效应的必要条件与闩锁的触发方式。通过对这些条件的分析表明,只要让Bipolar结构工作在安全区,此类闩锁效应是可以避免的。这可以通过版图设计和工艺技术来实现。文章最后给出了防止闩锁效应的关键设计技术。 相似文献
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CMOS Scaling理论下器件特征尺寸越来越小,这使得CMOS电路结构中的闩锁效应日益突出。闩锁是CMOS电路结构所固有的寄生效应,这种寄生的双极晶体管一旦被外界条件触发,会在电源与地之间形成大电流通路,导致器件失效。文章首先分析了CMOS电路结构中效应的产生机理及其触发方式,得到了避免闩锁效应的条件。然后通过对这些条件进行分析,从版图设计和工艺等方面考虑如何抑制闩锁效应。最后介绍了几种抑制闩锁效应的关键技术方案。 相似文献
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CMOS Scaling理论下器件特征尺寸越来越小,这使得CMOS电路结构中的闩锁效应日益突出。闩锁是CMOS电路结构所固有的寄生效应,这种寄生的双极晶体管一旦被外界条件触发,会在电源与地之间形成大电流通路,导致器件失效。首先分析了CMOS电路结构中效应的产生机理及其触发方式,得到了避免闩锁效应的条件。然后通过对这些条件进行分析,从版图、工艺等方面考虑如何抑制闩锁效应。最后介绍了几种抑制闩锁效应关键技术方案。 相似文献
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测试了不同静态栅极触发电压(输入电压)下诱发CMOS闩锁效应需要的电源电压和输出电压(即将闩锁时的输出电压),发现静态栅极触发CMOS闩锁效应存在触发电流限制和维持电压限制两种闩锁触发限制模式,并且此栅极触发电压.输出电压曲线是动态栅极触发CMOS闩锁效应敏感区域与非敏感区域的分界线.通过改变输出端负载电容,测试出了不同电源电压下CMOS闩锁效应需要的栅极触发电压临界下降沿,并拟合出了0 pF负载电容时的临界下降沿,最终得出了PDSOI CMOS电路存在的CMOS闩锁效应很难通过电学方法测试出来的结论. 相似文献
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文章利用计算机模拟的方法分析了不同衬底CMOS反相器的单粒子闩锁(SEL)特性,分别对不同衬底CMOS反相器在电极分布和输出不同的情况下进行了研究,首先在不同电极分布时.通过电闩锁对器件进行模拟.得出不同电极分布时器件的维持电压,然后进行SEL模拟.根据模拟结果,我们发现在维持电压最小的电极分布情况下,粒子入射到阱-衬底结时,输出低电平时,器件产生闩锁后N衬底器件比P衬底器件闩锁电流大.输出高电平时.器件产生闩锁后P村底器件比N衬底器件的闩锁电流大。通过对不同衬底器件SEL阈值的测试,我们得到N村底器件比P衬底器件对SEL敏感.器件输出高电平时比输出低电平对SEL略敏感。 相似文献
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对于在轨微小卫星而言,单粒子闩锁(Single Event Latchup,SEL)是最具破坏性的单粒子效应之一,其后果轻则损坏器件,重则使在轨卫星失效。首先介绍了SEL发生机理,分析并总结现有抗SEL的关键技术。其次提出了空间单粒子闩锁防护措施并设计了一种可恢复式抗SEL电源接口电路,实现对卫星星上设备的防闩锁及过流保护。最后利用脉冲激光模拟单粒子效应技术对具有飞行经验的芯片进行实验测试。实验结果表明,该电路能够准确地检测SEL的发生,有效解除SEL效应,保证系统运行稳定可靠。 相似文献
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《现代电子技术》2019,(16)
LVTSCR器件结构相对于普通SCR具有低电压触发特性而被广泛用于集成电路的片上静电放电(ESD)防护中。但是在ESD事件来临时,其维持电压过低易发生闩锁(latch-up)效应致使器件无法正常关断。为改进LVTSCR这一缺陷,提出了一种内嵌PMOS的高维持电压LVTSCR结构,即Embedded PMOS LVTSCR(EP-LVTSCR)。该结构基于内嵌PMOS组成的分流通路抽取阱内载流子,抑制寄生晶体管PNP与NPN正反馈效应,来提高器件抗闩锁能力;通过Sentaurus TCAD仿真软件模拟0.18μm CMOS工艺,验证器件的电流电压(I-V)特性。实验结果表明,与传统LVTSCR相比较,EP-LVTSCR的维持电压从2.01 V提升至4.50 V,触发电压从8.54 V降低到7.87 V。该器件具有良好的电压钳位特性,适用于3.3 V电源电路芯片上静电防护应用。 相似文献
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This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I (breakdown voltage) of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron-hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage. 相似文献
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在MATLAB平台上,对直接序列扩频系统进行仿真分析.系统采用Hadamard序列作为扩频码,对系统在平坦衰落和瑞利衰落信道环境下的误码率进行分析,讨论了扩频、解扩过程.此外,还仿真比较了不同用户数和不同扩频码的系统,为分析设计直扩系统提供依据.仿真结果表明,本实验系统可在SNR为-1.6dB的传输条件下得到10-3量级的误码率,Hadamard序列可用作扩频序列,系统可用作检验各种正交码组的正交性. 相似文献
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C.L. Wilson 《Solid-state electronics》1980,23(4):345-356
Several methods are discussed for measurement of PN junction shapes and channel field conditions in short (≈1 μm gate lengths) MOS transistors. A special test structure for short channel MOS transistor measurements with a scanning electron microscope (SEM) is presented. Secondary electron measurements on lased scribed and angle lapped and stained PN junctions are discussed. Methods for sectional imaging of electrically active, cleaved transistors using electron-beam-induced current (EBIC) are presented. An approximate quantitative model of the EBIC imaging process is presented which allows the calculation of current in a MOS transistor. Using this model the current is shown to be dominated by electric field effects in the depletion region of the transistor. 相似文献
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对混合PiN/Schottky二极管(MPS)进行研究,首先对MPS二极管的工作原理进行了分析,通过对MPS二极管、肖特基二极管、PIN二极管的伏安特性进行模拟,结果表明MPS二极管正向压降小,电流密度大,反向漏电流小,是一种具有肖特基正向特性和PN结反向特性的新型整流器。可以通过改变肖特基和PN结的面积比来调整MPS二极管的性能,与肖特基二极管和PIN二极管相比具有明显的优势,是功率系统不可或缺的功率整流管。 相似文献
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Cahn C. Leimer D. Marsh C. Huntowski F. LaRue G. 《Communications, IEEE Transactions on》1977,25(8):832-840
To optimize the threshold of a pseudonoise (PN) spread spectrum modem for use over an aircraft/satellite communications link at SHF, the effects of Doppler must be taken into account. Reconstitution of carrier phase by a Costas loop to coherently demodulate the PSK data and also the delay-lock error voltage has typically been the practice in PN modems intended for ground applications. To accommodate the platform dynamics, the Costas loop must have a relatively wide bandwidth, and this implies a significant threshold degradation. An alternate implementation employs a noncoherent carrier tracking loop which maintains frequency lock rather than phase lock. Now, the delay-lock error voltage is noncoherently demodulated. For the airborne application, analysis and simulations show this implementation will extend the receiver's tracking threshold significantly (up to 6 dB) for the worst case dynamics profile. An experimental project was undertaken to modify an existing ground PN modem (AN/USC-28, ADM version) for flight test. A software implementation of the digital tracking algorithms was selected where a HP-2100A minicomputer controls carrier frequency and PN code phase via digital phase shifters. The Costas demodulator for extracting PSK data resides entirely in software, and is completely segregated from PN tracking. In laboratory testing of the receiver with simulated dynamics and in actual flight tests, the demonstrated performance was found to approach closely the goals established by the analyses and simulations. 相似文献
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Silicon Photodiode with Very Small Sensitive Area 总被引:1,自引:0,他引:1
YINChangsong LIXiaojun 《半导体光子学与技术》1996,2(4):289-292
The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density JLS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in substance by measuring the light current of the PN junction photodiode with very small senitive area. 相似文献