基于Crossbar Switch结构的多层AMBA高速总线的设计及其应用

为了解决片上系统总线有限带宽的瓶颈,提出了一种快速的将标准AMBA总线升级为交叉开关式(Crossbar Switch)的多层AMBA总线的互联架构,该总线架构已经使用Synosys工具0.18μmCMOS技术工艺进行设计,并且采用电子系统级(ESL)测试方法搭建系统环境对总线进行验证.此总线架构已经成功应用于Corestar3400DSP的SoC平台设计,极大地提高了AMBA总线的频率和传输带宽,部分解决了片上总线的资源共享问题,为高性能片上系统设计提供了更加灵活的总线架构.     

AMBA总线及其应用

介绍了AMBA总线,并且使用ModelSim仿真软件对一个应用AMAB总线的设计进行了仿真,验证了设计与AMBA总线的兼容性.AMBA总线可以提供一个具有多个主单元,支持宽带宽高性能的系统.今后,AMBA总线必将在越来越多的SoC设计中得到应用.     

基于AMBA总线的DMA控制器IP核设计

本文介绍了一种基于AMBA快速总线--AHB总线的32位DMA控制器的设计,该设计与ARM公司的PrimCell(R)相比,有更小的面积,更优的性能,可以用于作为各种芯片内DMA控制器的参考设计.     

基于断言的AHB-Wishbone总线桥的功能验证

本文比较了AMBA的AHB协议和Wishbone协议,提出使用SystemVerilog语言实现AHB-Wishbone总线桥的方法。文中阐述了如何将SystemVerilog断言嵌入到设计中,监视总线信号的时序关系。结合Mentor公司的高级验证方法学（AVM）搭建验证平台,并对设计进行功能验证,采用了事务级的验证策略以及随机约束和功能覆盖率等验证技术新特性。总线桥验证平台能够极大的提高验证效率,其组件具有可重用性。最后在ModelSim工具下进行了仿真,仿真报告和结果说明了总线桥的设计符合要求。     

基于3G SIM卡SoC芯片设计的AMBA总线的精简策略

AMBA总线是SoC设计中普遍采用的总线架构,它对许多具体的设计项目往往显得过于庞大,结合3G SIM卡SoC芯片的设计,研究了AMBA总线架构的若干精简策略,提出了一些对总线进行裁剪的参考方法,经过AHB VIP验证环境表明结果可行.该方法对基于AMBA架构的SoC芯片设计有着一定的参考意义.     

分层验证法在基于AMBA系统中的应用

在基于AMBA(Advanced Microcontroller Bus Architecture，先进的微控制器总线体系结构)的系统中，用户设计的模块和第三方IP模块与AMBA AHB(Advanced High—performance Bus)和AMBA APB(Advance Peripheral Bus)总线相连，如图1所示。分层验证方法能够跨越总线边界应用于AHB和     

基于AMBA总线的AES算法设计

描述了基于AMBA（高级微控制器总线架构）总线的AES（高级加密标准）算法硬件设计。AES算法采用状态机实现,具有4种工作模式、支持2种密钥以及AHB（高级高性能总线）。采用实验室的SEGPS平台对设计进行仿真验证,并与采用C＋＋语言实现的AES进行比对验证。最后,选用FPGA（现场可编程门阵列）进行综合,结果显示,可工作最高频率为140．1MHz,占用逻辑单元的资源为6977,数据吞吐率最高为351．65Mbit／s。     

基于AMBA架构的SoC芯片验证的方法

当集成电路设计规模不断扩大,复杂度越来越高,片上系统(SoC,System-on-Chip)实现的功能越来越强大的时候,SoC芯片的功能验证逐渐成为设计中的瓶颈。本文提出了一种使用Synopsys公司的AMBA验证IP对基于AMBA(Advanced Micro-controller Bus Architecture)总线架构的SoC芯片进行功能验证的方法。     

充分发挥AMBA 3 AXI协议的性能优势

通过结合专用通道和共享通道,AMBA 3 AXI总线结构的混合型架构可以利用这种总线的最高速度,同时还可以减少互联、减小面积、降低功耗.通过这种混合模式,可向最高性能的主/从链路提供专用全速AMBA 3 AXI带宽.对于其他连接,设计人员可以在小型部署中在链路与通道性能之间取得平衡--通常可以大幅减少线缆数量.     

双层AMBA总线设计及其在SoC芯片设计中的应用

AMBA总线是目前主流的片上总线。五文给出的双层AMBA总线设计能极大地提高总线带宽，并使系统架构更为灵活。文章详细介绍了此设计的实现，并从两个方面对两种总线方式进行了比较。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.