多泵浦与光纤级联结合的宽带拉曼光纤放大器

针对传统光纤通信传输系统中拉曼光纤放大器(RFA)增益带宽不足、输出增益低且输出增益不平坦的问题,设计了一种多泵浦和光纤级联相结合的宽带拉曼光纤放大器。并且推导实现增益平坦输出时所用六个泵浦光和四段光子晶体光纤(PCF)对应参数满足的约束表达式,从理论上给出了一种提高放大器增益和增益带宽的同时保证较小增益平坦度的设计方法。最后通过Matlab数值模拟,所设计的宽带拉曼光纤放大器达到了增益带宽92 nm,平均增益39.95 dB,增益平坦度0.1447 dB。     

基于PID和FPGA的宽带增益平坦拉曼放大器的实现

依据积分分离式PID控制原理,设计了基于PID控制技术和FPGA的高精度宽带增益平坦的拉曼放大器(RFA).激光器驱动电流控制精度为0.1 mA,系统温漂小于±25 mK,实现泵浦激光器24 h波长漂移小于±0.02 nm.依据遗传算法,采用5波长大功率LD后向泵浦和100.8 km色散位移光纤(DSF),实现了带宽为90 nm、增益平坦度为0.87 dB的拉曼放大.     

基于粒子群优化算法的双向多泵浦光纤拉曼放大器增益研究

基于石英光纤作为增益介质,采用龙格-库塔法、打靶法求解多波长双向泵浦光纤拉曼放大器的功率耦合波方程,得到拉曼放大器的增益带宽,平均增益,增益平坦度以及泵浦光和信号光沿光纤的分布。再通过粒子群优化算法对同一数量泵浦光不同排列双向系统进行逐个优化分析,在14种双向泵浦结构中选出性能较优的三种结构,再对它们优化参数设置,最终得到性能最优的双向泵浦结构BBFF。研究结果表明:在仅有四个泵浦光的情况下,双向多泵浦结构BBFF具有最优的平均增益和增益平坦度,并且得到了开关增益为23.1665 dB,增益平坦度为0.794 dB的双向泵浦结构。     

光纤拉曼放大器的优化设计

文章介绍了一种设计多波长泵浦光纤拉曼放大器（FRA）的方法以及怎样用此方法实现需要的增益曲线。利用这种方法仿真实现了增益接近20dB、平坦度小于0.2dB的拉曼放大器，它与现有的拉曼放大器相比具有更平坦的增益曲线。     

（英）基于增益谱多项式拟合的双泵浦碲基光纤级联拉曼光纤放大器

光纤拉曼放大器的带宽、增益及增益平坦度直接影响了光纤通信系统的传输质量.针对这些参数的优化,根据碲基光纤的拉曼增益谱特性提出了一种双泵浦级联碲基光纤的拉曼放大器结构.并推导了实现增益谱平坦时光纤长度和泵浦参数满足的约束条件.经过对拉曼增益谱的5次多项式拟合,更准确地反映了拉曼增益谱的信息,同时也简化了其实现增益谱平坦的条件.通过Matlab仿真分析得到,当两段光纤分别取0.339 km,0.16 km时,其最大增益为17.81 dB,增益平坦度为0.66 dB ,放大带宽为48 nm.该方案为宽带宽、高增益、增益平坦度小的拉曼光纤放大器设计提供了一种新的思路.     

基于增益谱多项式拟合的双泵浦碲基光纤级联拉曼光纤放大器（英文）

光纤拉曼放大器的带宽、增益及增益平坦度直接影响了光纤通信系统的传输质量.针对这些参数的优化,根据碲基光纤的拉曼增益谱特性提出了一种双泵浦级联碲基光纤的拉曼放大器结构.并推导了实现增益谱平坦时光纤长度和泵浦参数满足的约束条件.经过对拉曼增益谱的5次多项式拟合,更准确地反映了拉曼增益谱的信息,同时也简化了其实现增益谱平坦的条件.通过Matlab仿真分析得到,当两段光纤分别取0.339km,0.16 km时,其最大增益为17.81 dB,增益平坦度为0.66 dB,放大带宽为48 nm.该方案为宽带宽、高增益、增益平坦度小的拉曼光纤放大器设计提供了一种新的思路.     

反向多波长泵浦宽带FRA泵浦配置的一种优化方法

提出了一种基于粒子群算法(PSO)优化设计反向多波长泵浦光纤拉曼放大器(FRA)的方法.具体实施中应用PSO对6波长反向泵浦FRA的泵浦波长和泵浦功率共12个变量同时进行优化,然后依据泵浦光功率演变规律改进PSO算法,较好地克服了PSO优化精度低的缺点,最后得到了增益带宽100 nm,增益波动小于0.6 dB的优化结果,这为优化设计超宽带光纤拉曼放大器提供了一种可行的方法.     

基于高斯拟合的级联光子晶体光纤拉曼放大器

为了满足超高速、大容量的光纤传输系统的需求,本文在两段光纤级联结构的基础上,分析了光子晶体光纤的拉曼增益谱并采用高斯曲线对其进行拟合,设计了一种高增益、宽带宽的拉曼光纤放大器。高斯曲线拟合完整准确地保留了光子晶体光纤的增益谱信息,同时尽可能地增加了信号的传输带宽。利用四阶龙格-库塔法对经典的拉曼耦合波微分方程进行数值求解,不仅降低了放大器的增益平坦度,也实现了高增益放大。相比于直线拟合光纤拉曼增益谱的方法,提升了系统的传输容量。通过仿真分析得到:放大器的放大带宽为61 nm,其增益高达22.8 dB,增益平坦度仅为0.42 dB。     

多泵浦反向激励的拉曼光纤放大器的实现

在拉曼光纤放大器理论建模的基础上,设计并制作了四波长八泵浦反向激励且带宽为90nm的光纤放大器。利用康宁公司生产的25kmSMF作为增益光纤,得到拉曼增益为(11.5±1)dB。采用在不同泵浦情况下实测得到的信号增益系数谱和泵浦之间的增益系数谱,使理论建模得到的拉曼增益与实测相一致。     

面向6G的拉曼微结构光纤放大器设计

为了满足6G系统对未来光通信网络的要求,利用掺 GeO₂微结构光纤设计了一种多泵浦拉曼光纤放大器,该方案能够解决适用于6G系统需求的 拉曼光纤放大器中谱宽窄、输出增益低且不平坦的问题。在理论上,运用四阶龙格-库塔法 对经典拉曼耦合波微分方程进行求解;在结构上,通过合并两对具有相同波长的泵浦光,来 减少泵浦个数、简化结构,同时采用级联两段微结构光纤的方法,使信号光增益在拉曼放大 器的输出端实现前放大,后补偿。实验结果表明,在100 nm的谱宽范 围内,放大器的平均增益高达35.72 dB,增益波动小于±0. 43 dB。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.