基于贝叶斯网络的战场目标威胁评估

准确地对战场目标的威胁等级进行评估,是战场辅助决策系统的一个重要环节.贝叶斯网是一种进行不确定分析和推理的有效方法.介绍了联合树贝叶斯网络推理算法,分析了战场目标的威胁等级评估涉及的主要因素,建立了相应的贝叶斯网络模型,并进行了实例推理分析,其结果比较准确地反映了目标的威胁程度.     

基于DFDBN的防空火控雷达威胁评估方法

针对防空火控雷达火控系统的多目标威胁判断问题,提出基于离散模糊动态贝叶斯网络的威胁评估方法。首先,把得到的不确定性数据进行模糊推理,获取威胁评估模型的训练和测试数据,然后,量化等级,同时运用动态贝叶斯网络的推理算法,通过多个时刻目标的同一特征参数相互补充和修正以及同一时刻目标的不同特征参数之间修正,对系统各个时刻观测值或某一时刻观测值进行威胁评估,得出正确的结果。最后,仿真结果表明该方法合理、有效。     

基于动态云贝叶斯网络的舰艇防空目标威胁评估

针对目标威胁评估中信息表达的不确定性以及威胁评估模型专家网络结构的主观性,提出一种基于结构学习的动态云贝叶斯网络评估模型。首先,利用云模型良好的知识表达能力定量描述不确定连续性信息;其次,使用爬山算法进行结构学习,综合专家提出的网络结构构建贝叶斯网络;接着引入时间变量,将其扩展成为动态贝叶斯网络,然后用最大似然概率估计算法学习网络参数;最后,利用联合树算法对动态云贝叶斯网络进行推理评估。仿真结果表明,该模型能够有效的对观测信息进行威胁评估,具有合理性和可行性。     

基于动态贝叶斯网络的低慢小目标威胁评估北大核心CSCD

针对复杂地形下低慢小目标难以防御的难题,本文分析并研究对于与低慢小目标威胁评估具有影响作用的因素,提出一种基于动态贝叶斯网络的威胁评估方法。基于低慢小目标的威胁属性,构建动态贝叶斯网络拓扑,利用贝叶斯理论推理出威胁值;并通过仿真试验验证该种基于动态贝叶斯网络的方法在对低慢小目标进行威胁评估是可行的。     

山地条件下的无人机气象威胁度建模与评估方法

针对无人机在山地条件下飞行时气象威胁因素复杂多变,提出一种基于贝叶斯网络的山地气象威胁度建模与评估方法。结合专家知识与EM算法构建贝叶斯网络模型,利用多树传播推理算法对山地气象要素进行威胁等级评估。评估结果表明,基于贝叶斯网络的气象威胁度评估能够正确直观地划分山地气象要素对无人机的威胁等级,对无人机智能决策具有重要意义。     

动态贝叶斯网络用于雷达遮盖干扰效果评估

依据电子战实际作战环境,以可代表性和可观测性为标准,选取压制干扰效果评估指标;提出基于动态贝叶斯网络的效果评估模型,对若干可观测的目标特征参数进行综合推理;推导了动态贝叶斯网络的推理算法。分析结果表明,动态贝叶斯网络能够综合目标雷达不同的毁伤效果信息进行较为合理的评估;与静态贝叶斯网络相比,动态贝叶斯网络无论在准确性上,还是在滤波平滑能力上都要优于静态贝叶斯网络。     

云贝叶斯网络在目标电磁环境威胁评估中的应用

云模型能够实现定性概念与定量数值之间的相互转换,将云模型这一优点引入到电磁威胁度评估,并结合贝叶斯网络设计出云贝叶斯推理算法系统.以目标电磁空间为背景,利用MATLAB平台对云推理算法系统仿真,得出具体的目标电磁环境威胁程度,检验了该方法的效果.     

贝叶斯网络在通信对抗信号干扰优先等级评估中的应用

介绍了贝叶斯网络原理及其推理机制。对通信对抗信号干扰优先等级评估因素进行了分析。针对常规信号提出了基于贝叶斯网络的通信对抗信号干扰优先等级评估模型。仿真结果证明该模型能够累积历史信息，提高通信对抗信号干扰优先等级评估的准确性。     

基于贝叶斯网络的目标干扰优先等级评估方法

在对通信对抗指挥决策活动进行分析的基础上,针对通信对抗目标干扰优先等级评估的问题,从目标信号特征和目标行为特征两方面联合分析了影响评估的因素,提出了基于贝叶斯网络的目标干扰优先等级评估模型以及推理流程,并进行了仿真验证。仿真结果表明该模型和算法能有效提高目标干扰优先等级评估的准确性、时效性,同时结合仿真实验说明了先期通信侦察对目标干扰优先等级评估的重要影响。     

基于Netica 的机载雷达侦察效能评估

将动态贝叶斯网络应用于机载雷达侦察效能评估中,从而实现了一段时间内机载雷达侦察效能的动态评估。选取随战场环境、操作员水平等变化的因素作为影响机载雷达侦察效能评估的指标,并采用模糊分类方法形成各指标的状态集合;构建基于Netica 的动态贝叶斯网络模型,运用德尔菲法确定模型参数及隶属度函数,利用贝叶斯网络的推理模型以及相应的推理算法,对机载雷达侦察效能进行动态评估。仿真结果表明:该方法能够科学、有效地评估机载雷达侦察效能。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.