吊舱冲压空气环控系统研制

吊舱常作为现有飞机的功能扩展舱,悬挂于载机机腹或机翼下,其通常与载机没有环控接口,因此需要自带环控系统为吊舱内设备提供必要的环控保障。直接引载机飞行时的外界空气用于设备环控的冲压空气环控系统是吊舱环控最常见的一种方式,其特别适合低速吊舱,具有简洁、经济、可靠等优点。介绍了某吊舱冲压空气环控系统的研制,特别是对该系统的试验测试进行了详细论述,试验表明该系统的设计是成功的,对类似系统的研制具有一定的参考意义。     

机载电子吊舱环控方法优化研究

随着电子设备集成度不断提高，机载电子吊舱日趋小型化，对电子吊舱环控系统的要求越来越高，必须综合各方面的约束条件对环控技术路线进行分析、论证，获取优化方案，才能满足需求。结合工程实例，综合工作包线、热流密度、温度、均温性、体积、重量及能耗等约束条件，基于仿真、计算及模拟试验验证，对电子吊舱环控方法进行系统分析，最终确定了一种优化的冲压液冷环控方案，并对其中主要部件的优化、验证进行了阐述。工程试验及使用情况印证了优化方法的合理性和优化结果的正确性。     

电子吊舱热设计研究

结合蒸气循环制冷系统和空气循环制冷系统，提出了工程化的吊舱热设计方案，给出了复杂飞行环境中的热载荷分析，对吊舱环控系统设计中的关键问题阐述了实现方法。实验研究表明，本文提出的环控系统是一种适用于电子吊舱的高效、可行的解决方案。     

无人机载光电吊舱显控软件的设计与实现

随着无人直升机和无人机载光电吊舱的应用日渐广泛,与光电吊舱配套的显控软件变得越来越重要.基于C++语言和Qt框架设计并实现了一种用于无人机载光电吊舱的显控软件,采用多线程方式执行视频流接收、解码显示及串口数据收发等多项任务,利用功能模块内部的线程创建和signal/slot机制使程序结构清晰易懂.最后,利用多次挂飞试验验证了该软件各项功能的有效性和稳定性.     

机载光电吊舱线性位移补偿方法

为提高机载光电吊舱对地面目标的成像侦察、目标跟踪效果,提出一种适用于机载光电吊舱的线性位移补偿方法。通过对飞机速度、飞机姿态、坐标矩阵转换,得到目标相对于光电吊舱的角速度,反向补偿给光电吊舱伺服运动系统,使得光电系统的光学瞄准线实时指向目标,提高对目标区域的侦察效果和使用友好性。该方法的有效性已在实践中得到验证。     

光电通信吊舱内框架悬置系统设计与分析

为避免光电通信吊舱的外界振动直接传至内框架的光电负载上而影响成像质量和跟踪精度,在光电吊舱内外框架之间加入弹性支撑隔振元件。建立内框架隔振系统的动力学模型,对耦合情况进行分析和解耦设计。应用能量法和Matlab语言编程对系统解耦率进行计算分析,验证所提出设计方法的合理性与正确性,研究结果为光电吊舱隔振设计方面的研究提供了理论基础。     

基于Icepak的吊舱环控热设计与研究北大核心CSCD

本文对某机载吊舱的散热进行了设计,分析了影响吊舱内部温度的因素,提出了一种新型的散热结构,针对密闭情况下吊舱内部温度情况,提高整机的散热能力,并使用热仿真软件ANSYS Icepak进行仿真分析,验证设计方案。结果表明,新型环控散热方案使得在恶劣环境温度为55℃时,吊舱内部负载芯片的稳态温度维持在83℃,满足设备工作温度的可靠性。     

直升机载光电测量吊舱结构设计分析

本文综述了直升机载光电吊舱的现状与发展,分析了使用环境和在不同任务的条件下,各类吊舱搭载光电探测器的组合情况。提出了光电测量吊舱的总体结构设计原则,在结构设计的综合指标论证基础上,对光电测量吊舱总体结构的技术性能和使用性能的研究与设计提出了可行性意见。     

基于SOPC的任务电子设备智能环控系统设计

随着电子技术的发展和革新,任务电子设备的功能越来越强,相应的环控设计也日益重要,环控系统设计的成功与否是任务电子设备能否正常、可靠工作的关键。笔者设计了一种以SOPC为核心控制单元,采用PID控制算法和SHT75温湿度传感器的环控系统。经实践检验,该设计具有可靠性高、电磁兼容性好、智能性强等优点。     

机载光电吊舱视频流实时解码显示技术

机载光电吊舱通常将视频进行编码压缩后下传到地面操控台,由显控软件接收并解码后进行显示,容易出现视频显示滞后和卡顿现象。为提高视频的实时性和平稳性,描述一种视频流实时解码显示技术,通过设计合理的多线程架构,采用动态图像缓存技术,实现了低延迟和无卡顿的显示效果,并通过实际试用测试验证了方法的有效性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.