基于性能匹配的SoC自适应电压调节系统

SoC在不同应用场景的频率不同,导致关键路径的时序余量会有较大的差异,在芯片设计阶段,为了保证芯片最坏情况下依然能够正常运行,增加了较大的电压余量,所以固定电压供电会造成不必要的功耗损失.基于最大程度节约功耗的需求,介绍了一种基于线下校准和延时链实时监测的自适应电压调节系统,实时监测电路时序,结合数字低压差线性稳压器(...     

适用于GaN栅极驱动的自适应死区时间控制电路

设计了一种适用于GaN栅极驱动的自适应死区时间控制电路,该电路具有低延时、低功耗、高速、高开关频率的特点。电路通过单脉冲产生电路检测开关节点电压,以实现零静态功耗;加入互锁电路以防误触发,消除了由开关节点毛刺导致的上下管直通的现象。电路基于SMIC 0.18 μm BCD工艺设计,仿真结果表明,死区时间可随负载变化而自适应调整,且当最坏情况开关节点电压的dv/dt=48 V/ns时,电路高低侧死区时间误差仅为1.59 ns和2.69 ns。     

一种25 Gbit/s CMOS自适应判决反馈均衡器

基于65 nm CMOS工艺,设计了一种25 Gbit/s带有一个无限冲激响应抽头的自适应判决反馈均衡器。该均衡器中关键路径采用堆叠式选择器和锁存器组成的半速率预测式结构,以减小环路反馈延时。自适应模块采用改进的最小均方算法,以改善抽头系数的收敛性。输出缓冲采用改进的fT倍增结构,以提升带宽并具有预加重功能。仿真结果表明,当信号速率为25 Gbit/s时,该均衡器能够自适应地实现最高20 dB衰减量的补偿,输出抖动小于10 ps。1.2 V电源供电时,整体电路在不同工艺角下的平均功耗约为120.5 mW。     

千兆比特数据率LVDS接口电路设计

设计了一个采用0.18μm1.8V/3.3V CMOS工艺制造的千兆比特数据率LVDS I/O接口电路。发送器电路采用内部参考电流源和片上匹配电阻,使工艺偏差、温度变化对输出信号幅度的影响减小50%;接收器电路采用一种改进的结构,通过检测输入共模电平,自适应调整预放大器偏置电压,保证跨导Gm在LVDS标准[1]要求的共模范围内恒定,因此芯片在接收端引入的抖动最小。芯片面积0.175mm2,3.3V电源电压下功耗为33mW,测试表明此接口传输速率达到1Gb/s。     

一种用于ADC采样的高精度时钟占空比校正方法

本文提出一种高精度时钟信号占空比校正方法,采用环路负反馈的理论产生延时控制电压,并通过延时可控的占空比调整电路来产生高精度占空比的时钟信号。基于0.18μm工艺对所提出的校正方法进行了具体电路设计和PVT全面仿真验证,输入频率在100MHz占空比变化范围6%~97%时,该方法都可以动态精确的输出频率为100MHz占空比为50%的信号,最大误差小于0.28%,功耗仅为4.8mW,为高精度ADC采样和转换提供了高效的解决方案。     

基于运动估计算法的PE模块的低功耗设计

基于运动估计算法的PE模块的硬件结构设计,文中提出了集群式电压调节算法,给电路分配双电压供电,相较于使用单一电压的电路,功耗减少了45.3%.在此基础上,进一步采用门控时钟技术来对电路精细化管理,取得了63.2%的功耗节省.此外,针对多电压电路结构,提出了一种新的电平转化器以获得更小的功耗和延时.     

一种低功耗高鲁棒性老化预测传感器

为了降低电路老化对数字集成电路性能的影响,提出了一种通过对比输入信号与其反向延迟信号对电路老化进行预测的传感器结构.提出的传感器结构预测部分可对组合逻辑电路进行数据失效前的老化预测,当检测到电路已发生老化致数据失效时,容错部分可对错误信号进行矫正.该结构特殊的设计减小了面积开销和功耗.采用HSPICE软件对传感器功能进行模拟仿真,实验结果验证了传感器可在不同环境下正确地预测电路的老化情况,并对已发生错误的信号进行矫正,与其他功能相同的传感器相比,该传感器的面积及功耗分别降低了30.91％和41.3％.     

基于0.18μm CMOS工艺的低温漂低功耗延时电路

基于0.18μm CMOS工艺设计了一款低温漂延时电路,适用于不能使用锁相环电路又对信号传输精度有要求的低功耗传感检测应用。采用正温度系数的偏置电压,通过电流镜为延时电路提供一个正温度系数的偏置电流,利用偏置电流约束电路的延时温漂,实现温漂粗调。采用数字时间转换器,通过外部输入配置,对粗调后的延时进行动态细调,使得延时电路具有更高的动态稳定性和更低的温漂特性。电路测试结果表明,在3.3 V的电源电压下,-55～125℃内延时电路的温度系数为125×10^-6/℃,静态功耗仅为0.72 mW。     

工艺偏差下基于功耗与延时的硬件木马检测有效性分析

首先简述了硬件木马以及现有的硬件木马检测方法,之后考虑了工艺偏差对硬件木马检测的影响;工艺偏差的存在对电路功耗和延时等都会造成一定的影响,从而在一定程度上掩盖了硬件木马电路引起的功耗和延时特征变化.实验中针对AES加密核心S-box电路设计植入了一种基于组合电路的功能型硬件木马电路,并在40 nm工艺下利用HSPICE模拟不同大小硬件木马电路下S-box电路功耗轨迹和延时数据,在不同工艺模式下分析基于功耗与延时检测木马的有效性.结果显示,基于延时的硬件木马检测方法在木马规模较小时更能有效实现硬件木马检测.当木马规模增大时,基于功耗的检测方法的优势更明显,其抗工艺偏差干扰的能力会更强.     

一种用于峰值电流模式的锁存比较器设计

设计了一种宽输入共模范围的比较器,用以处理高端电流检测中大共模信号的问题。通过采用预放大器和锁存器结构,优化了传输延时,提高了电路的分辨率及工作速度。基于0.5μm工艺,采用Cadence软件对电路进行仿真。结果表明,该电路可以处理轨到轨的共模输入电平,其最大可处理共模输入电平可跟随输入电压变化。当开关电源频率为1 MHz时,比较器电路的分辨率达到0.1 mV。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.