基于有限元法的孔缝结构矩形腔屏蔽效能数值仿真

微弱信号检测设备因其检测对象的幅值比较小且易受电磁噪声干扰,所以如何有效地抑制外部电磁干扰非常重要。以微弱信号检测电路的屏蔽腔体为研究对象,采用有限元法对具有孔缝结构的矩形腔体进行建模仿真,分析孔缝的尺寸、形状对屏蔽效能的影响。仿真结果表明：采用多排圆形小孔代替相同面积的矩形缝隙在0.1GHz~0.8GHz范围内屏蔽效能提高了20dB以上,在0.8GHz~1GHz范围内提高了35dB。同时得到屏蔽腔体的谐振频率以及腔体内部不同位置处的屏蔽效能。仿真结果有利于电路和器件的合理布局,进而提高微弱信号检测设备的抗电磁干扰能力。     

Ansoft HFSS在电磁屏蔽设计中的应用

随着电磁环境的日渐复杂,电子设备的电磁屏蔽设计显得愈加重要。在阐述电磁屏蔽原理和屏蔽效能计算方法的同时,简要介绍了有限元法的基本原理。利用Ansoft HFSS软件对某电子设备机壳进行了屏蔽效能分析,计算出了机壳内场的分布和机壳的屏蔽效能。通过比较不同尺寸缝隙对机壳屏蔽效能和谐振频率的影响,提出了提高屏蔽效能的改进措施。通过算例也显示了HFSS软件在电磁屏蔽设计中的优越性。     

金属机柜屏蔽效能的测试方法

电子设备,尤其是军用电子设备的金属壳体,除具有机械支撑和保护作用外,还应具有一定的屏蔽效能,才能确保设备的电磁兼容性,预测试机柜的屏蔽效能一直是电磁兼容性研究与设计的一大课题。本文介绍了用广谱信号源作了发射装置进行机柜屏蔽效能测试的原理和方法。     

屏蔽服屏蔽性能测试探讨

从电磁防护用品屏蔽性能影响因素及当前的测试现状出发,提出了屏蔽服屏蔽效能的测试方法。根据源的特性,将测试分为电场屏蔽测试、磁场屏蔽测试和电磁屏蔽测试,并对每种测试的关键点及注意事项进行了分析。     

低频电磁屏蔽工程设计研究

在讨论电磁屏蔽原理和屏蔽效能的基础上分析了屏蔽体结构及屏蔽材料对屏蔽效能的影响,给出了低频电磁屏蔽设计内容、设计注意事项和设计流程,并应用于具体工程设计实践,实际屏蔽效能测试验证了设计的有效性.     

机柜布局对方舱屏蔽效能影响的研究

电磁屏蔽方舱作为机动式指挥系统的车载运行环境,内有多种电子设备。为了保障舱内的电磁环境满足电子设备正常工作的需要,方舱必须具有良好的电磁屏蔽性能。方舱内的机柜布局是影响电磁屏蔽方舱屏蔽效能的一个重要因素。通过对电磁屏蔽方舱屏蔽效能的测试分析和CST仿真分析,定量分析了机柜布局对电磁屏蔽方舱屏蔽效能的影响,并对机柜的布局...     

基于有限元方法的波导管结构电磁屏蔽屏蔽效能分析

提出一种在屏蔽箱体孔缝结构的外部增加截止波导管结构的方法,利用截止波导管对高频电磁波的衰减作用来提高屏蔽箱体屏蔽效能。基于有限元法分别对截止波导管的长度、厚度及其形状进行仿真,仿真结果表明:在0.1 GHz~1 GHz频率范围内,随着截止波导管长度及厚度的增加屏蔽箱体屏蔽效能提高15d B以上,圆形和矩形截止波导管对屏蔽效能影响不大。根据实际情况合理选择截止波导管的长度及厚度可以提高微弱信号处理电路的电磁抗干扰能力。     

导电织物的电磁屏蔽性能研究

通过对金属纤维含量不同的混纺织物的电磁屏蔽效能测试,对导电织物的屏蔽性能进行了研究。分析了无限大金属网电磁屏蔽效能解析模型与金属纤维混纺织物的屏蔽效能之间的区别,并进一步研究了金属纤维密度和类型、织物的组织结构、金属纤维在纱线结构中的分布和经纬纱线的排列等因素对导电织物电磁屏蔽效能的影响。     

屏蔽人体模型对电磁波吸收的数值模拟研究

本文用时域有限差分法计算了三类电磁特性不同的材料屏蔽下三层无限长椭圆柱人体模型对电磁波的吸收。结果表明 ,功率密度相同 ,频率在 0 .2～ 6GHz之间的平面电磁波照射下 ,模型吸收的能量、能量在体内的分布及两者对入射电磁波频率的敏感程度严重地受到外加屏蔽的影响。考察了屏蔽材料的电磁特性与其屏蔽效能之间的关系。三类材料的比较显示 ,对人体电磁辐射防护 ,耗散材料优于非耗散材料 ,导电材料优于非导电材料。     

基于FEKO评估孔缝对金属腔屏蔽效能的影响

采用FEKO电磁仿真软件,从模型建立、入射波设置到求解结果设置,逐步介绍了金属腔屏蔽效能的分析方法,并探讨了缝隙长度、形状和穿透对屏蔽效能的影响.结果表明:电磁泄漏的关键是缝隙的最大尺寸而非总面积;穿透是屏蔽效能的“杀手”.最后,给出了改善屏蔽效能的建议.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.