基于Web Service的分布式网络教学平台系统的设计

本文针对当前网络教学平台应用系统普遍采用的C/S、B/S应用架构的不足,基于Web Service的分布式设计架构的优势,设计并开发了一种新的面向服务的三层分布式网络教学Web平台系统,同时论述了该架构下相应Web服务的具体实现方法。     

C/S和B/S模式下分布式多层测控系统的实现

将C/S、B/S分布式网络模式应用于工业测控系统,设计具有3层或多层结构的客户端服务器模型.通过对用户的安全认证、多用户的数据并发访问控制以及远端机器的访问控制等,构建高效率、坚固安全、具有容错能力和负载平衡能力的网络分布式测控平台.运用COM/COM 和DCOM等组件技术,将数据显示浏览、数据采集处理、数据库管理等逻辑彻底地分离,使系统耦合松散、可复用、易扩展、升级维护方便,真正满足资源共享、远程数据采集、数据管理及数据的Internet发布等需求,实现虚拟化实验和工业测控环境.     

基于CORBA实现电网联合反事故演习

联合反事故演习是保证电网安全稳定运行的关键。随着电力系统仿真技术的发展,文中提出利用分布式仿真技术来实现电网联合反事故演习。在此方案中基于CORBA的分布式面向对象的体系结构,提出一种多层的C/S的数据服务模型,从而提高了分布式仿真系统中数据的可用性和实时性,并且大大地减少了网络传输中的冗余信息。     

COM组件技术及其在三层结构模型中的应用

COM,即组件对象模型,是一种以组件为发布单元的对象模型,这种模型使各软件组件可用一种统一的方式进行交互.COM的中心思想就是定义软件中可以重用的部分,每一部分组件都有其特定的界面和所能提供的服务.分布式COM(DCOM:Distributed COM)扩展了COM,使之可以跨越机器的边界,从而使得COM组件能以一种位置透明的方式提供远程应用.为了实现三层C/S应用系统,需要各种开发工具的支持,COM技术就是实现三层应用系统的基础平台.     

大型企业小型OA网络数据库的部署及实现

分布式多层数据库开发技术已经成为开发数据库应用系统的主流技术。以Delphi的C/S架构为平台,通过采用桌面型Access数据库,搭建了小型OA网络数据库系统。最后给出了一种基于MIDAS的支持三层C/S应用程序开发的同网及跨网的数据库发布方法,详细说明了这种跨网络数据库的具体结构及应用并通过实验证明了该方法的可行。     

工业Ethernet在电厂远程实时监控系统中的应用

为实现火电厂MIS,SIS,DCS三层系统管控一体化,以及不同总线产品之间的信息互连、互操作和统一组态,将工业Ethernet技术通过OPC接口融合到现场FCS中,实现电厂信息自动化管理。介绍工业Ethernet技术的现状,并结合C/S和B/S结构模式,把现场设备和管理层集成于同一层以太网上形成电厂远程监控系统,并阐述了系统B/S和C/S混合结构模型以及OPC服务器的实现。     

P2P与C/S混合模式在企业即时通讯平台中的应用研究

论述了采用基于P2P和C/S混合模型进行即时通讯平台开发的优势,并将该混合模型运用于即时通讯平台中,客户端与服务器端之间采用C/S通讯模型,客户端与客户端之间采用P2P通讯模型。C/S通讯模型结构简单,支持分布式、并发环境,并且服务器可以集中管理资源,有利于权限控制和系统安全。P2P网络通过在多节点上复制数据,能够有效增加防故障的健壮性。     

电网安全生产平台设计与实现

基于电力广域网的特点,构建一个分布式电网安全生产系统.利用IIS服务和.NET技术及ORACLE92数据库构建B/S三层架构的应用系统,实现资源的充分共享,为省电力公司ERP、门户等业务管理系统提供生产数据支持,使资源发挥最大效益.从三层架构及应用、分布式系统设计与系统接口实现,平台部分总体设计,消息组件设计与实现等4部分论述了该系统设计与实现中需要解决的问题.     

三层C/S模型分析及应用

通过分析MIS系统中广泛使用的C/S模型当前所存在的问题,提出了基于C/S的三层体系结构方案,并简要阐述了采用Powerbuilder的实现过程和这种方案的不足之处.     

分布式虚拟化电子元器件测试系统开发与设计

通过对WebSocket技术和uIP TCP/IP栈的研究，提出了一种基于B/S和C/S混合结构的分布式虚拟化测试平台模型。该平台采用WebSocket中间件服务器技术，运用HTML 5中的WebSocket协议进行数据分发，利用uIP TCP/IP栈实现远程智能网关，应用虚拟化技术在Web页内嵌入仪器操作控制面板，通过WebSocket技术实现数据的实时传输。用户可以通过浏览器向Web服务器提交命令和参数，远程控制仪器设备，实时观察测试结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.