超宽带宽角极化不敏感的电路模拟吸波材料设计

传统的电路模拟吸波材料设计只考虑正入射时的吸波性能,当入射角较大,尤其是大于30°时,雷达吸波器的吸波效果明显恶化。随着现代双站雷达探测技术的发展,雷达探测电磁波可能来自不同的空间方向,这就要求雷达吸波材料不仅在电磁波正入射时具有较高的吸波性能,在斜入射时同样实现良好的隐身特性。为此,该文提出了一种新型的宽带吸波材料。该材料由嵌入集总电阻的导电方环阵列和设计良好的宽角阻抗匹配(WAIM)层组成。由于WAIM层的存在,斜入射情况下的吸波性能明显改善。同时,针对电磁波正斜入射情况,该文提出了准确的等效电路模型以及严格的数学计算模型,使得结构设计清晰明了。测量结果表明,正入射时的吸波带宽达到137.1%。当入射角小于45°时,所设计吸波材料在反射系数衰减至少10 dB情况下的公共百分比吸波带宽达到110.5%。等效电路模型计算、仿真与实测结果之间的相似性验证了该文设计的有效性。     

计算机辅助设计在雷达吸波材料中的应用

主要研究了计算机辅助设计在雷达吸波材料研究中的应用。根据电磁波传输理论。利用计算机，对雷达吸波材料的损耗介质进行优化设计。设计结果可以用来指导材料的设计，提高材料的吸波性能。     

宽带天线罩和雷达吸波材料的优化计算

利用Dixon优化算法优化各介质层的厚度,并采用多层结构,使在确定的频率点上天线罩对电磁波有很好的透射特性,雷达吸波材料有较强的吸收特性;而且达到宽频带的要求。计算结果表明,优化的天线罩对固定频率的电磁波的透射系数的幅值接近最大值1,而附在金属表面的雷达吸波材料对固定频率的电磁波的反射系数的幅值接近最小值0;并且随着介质层数的增加,频带明显展宽。     

涡旋微波量子雷达

电磁波轨道角动量(OAM)量子态指构成电磁波的每个电磁波量子均具有OAM,是涡旋电磁波的重要形态之一。在微波波段,这种电磁波量子称为“涡旋微波量子”。涡旋微波量子与传统平面波微波量子具有不同的物理特性,针对传统吸波材料具有强反射系数,造成雷达散射截面积(RCS)增加,并提升目标回波的接收信号功率和检测概率,是对抗基于吸波材料的隐身目标之利器。该文提出了基于OAM量子态的涡旋微波量子雷达,给出了基本物理架构和数学模型,借助量子电动力学(QED)从理论上分析了涡旋微波量子的高回波功率特性,并通过实验验证了理论分析的正确性。在收发端均采用相同极化方式下,与传统平面波雷达相比实验中回波功率提高约9 dB。同时,配合典型雷达工作参数进行了仿真,明确了涡旋微波量子雷达在接收功率和检测概率等性能指标上的提升,进一步展现了涡旋微波量子针对吸波材料的反隐身能力。      

雷达总论、雷达理论与技术

0609575吸波材料在飞行器隐身设计中的应用研究〔刊,中〕/王明亮//航空计算技术.—2005,35(4).—45-49(L)基于多目标优化理论,提出雷达吸波材料在物体表面涂敷位置的优化设计方法。利用电磁波的干涉原理和材料的吸波性能,通过设计吸波材料在飞行器表面的涂敷位置,研究局部涂敷吸波材料所能获得的隐身效果。以某飞行器模型为例开展吸波材料隐身技术研究,实现了雷达散射截面减缩与材料增重之间的优化与折衷。参50609576海杂波背景下基于RBF神经网络的目标检测〔刊,中〕/陈瑛//雷达科学与技术.—2005,3(5).—271-275(D)0609577动目标检测、定…     

三综合全负荷试验箱的试验安全性研究

三综合全负荷试验系统可以全面、准确地反映雷达等受试设备在高温、高湿和强震动环境下的性能,同时还可以发现受试设备的暂时性失效。但是,因为泄漏的电磁波在金属制成的三综合试验箱中会形成多次反射而加强,其能量足以影响雷达等受试设备的性能,甚至损坏受试设备;同时泄漏的电磁波也会影响测试结果的准确性。采用吸波材料是行之有效的方法。使用电磁场分析软件(FEKO)来计算三综合全负荷试验箱中的行波管附近的场强,然后再采用填充吸波材料的方法来减小试验箱中的场强;同时用FEKO计算在不同部位填充吸波材料后的场强,从而得到最佳的填充方案。     

UARAC的电磁特性分析

为了解决单轴各向异性吸波涂层(UARAC)的分析和设计中所遇到的反射系数计算问题,从电磁场理论出发,导出了电磁波以任意角入射时UARAC的反射系数公式。同时,给出了计算曲线的例子,通过实例计算分析了UARAC的斜入射特性和电磁波的入射角、极化状态等对UARAC的隐身效果的影响。得到负单轴各向异性吸波涂层(MUARAC)的吸波性能优于正单轴各向异性吸波涂层(PUARAC)的吸波性能及MUARAC的吸波性能主要取决于单轴各向异性吸波材料的横向参数等结论。为UARAC的计算机辅助分析和设计提供了基础。     

NiCuZn铁氧体基复合材料表面波吸波特性研究

制备了可以适用于P波段的NiCuZn铁氧体基复合材料,研究了基于NiCuZn铁氧体的复合型吸波材料对P波段电磁波表面波抑制的影响。并基于Stratton提出的表面波衰减率计算方法,分析了表面波衰减率与吸波材料厚度的关系,研究了不同电磁波铁氧体吸收剂含量的复合型吸波材料所对应的表面波吸波频带。研究结果表明:随着复合材料中铁氧体吸收剂质量占比的增大,其电磁参数均随之增大;当铁氧体与石蜡质量比为5∶1时,厚度为10 mm的复合型吸波材料具有最好的表面波衰减率;吸波材料在570～998 MHz的表面波衰减率均大于20 dB/m。     

测量材料吸收毫米波性能的新型探头

提出了用于测量吸波材料吸收雷达波性能的新型探头。引入高次模,采用相位分析法,克服了多变量干扰,简化计算。在固定区间求偏差和方差最小值,得到平缓电场。仿真结果证明新型探头口径电场平缓,波动小,近似平面波。新型探头的平面波范围与口径比为53%,比现有厘米波探头扩大了17.2%,能精确地模拟雷达对材料的辐射,减小测量误差。此探头尺寸较小,可广泛应用于户外测量材料吸收毫米波雷达电磁波的性能。     

新型纳米吸波涂层的研究

雷达吸波材料吸收电磁波的能力主要靠材料自身的电性能和磁性能业吸收一定频率范围内的电磁波。作者主要研制纳米材料作为新型的吸波材料的损耗介质，测量了β-Ni(OH)2、β-Ni(OH)2-Co、β-FeOOH和混合纳米粉末的频率反射特性。结果表明制备的纳米粉末不仅可以吸收电磁波，而且吸收性能优于其他一些常用的吸收材料，其最大吸收值可达40dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.