退火温度对钴铁氧体薄膜结构和性能的影响

采用溶胶-凝胶法结合匀胶旋涂工艺在复合基片(Pt/Ti/SiO2/Si)上制备了钴铁氧体(CoFe2O4)薄膜,利用XRD、SEM、VSM分析了薄膜的微结构以及磁性能,研究了不同退火温度对钴铁氧体薄膜的结构和磁性能的影响.结果表明,钴铁氧体在500℃时开始形成尖晶石相.随着退火温度的增高,钴铁氧体晶粒逐渐长大,饱和磁化...     

镍的金属有机化学气相沉积及相关因素的研究

研究了以碳基镍为沉积源，利用MOCVD技术沉积镍薄膜；讨论了沉积温度及压力对沉积速率的影响，以及利用SEM、XRD、DSC等分析手段来探讨沉积温度及不同沉积基体对薄膜微观形态的影响。结果表明，沉积温度约为150℃可以得到较快的沉积速率，而且薄膜连续具有金属光泽；以铜为沉积基体所得到的薄膜其微观形态中有明显的晶粒，以玻璃为基体得到的薄膜却含有部分非晶态的组织；沉积速率随着反应室工作压力的增加而下降。     

光催化二氧化钛薄膜的制备工艺研究进展

评述了制备二氧化钛薄膜的液相法、气相法和电化学法3大类方法的优缺点，以及3大类方法所包含的溶胶-凝胶、微乳液、磁控溅射、物理气相沉积、化学气相沉积、阳极氧化和微弧氧化等方法制备二氧化钛薄膜的工艺步骤、特点及研究进展。文章最后指出，液相法由于自身存在的优点，仍将是今后二氧化钛薄膜制备和研究的重点；而光催化性能更好的掺杂二氧化钛，其研究重点是探讨掺杂方式、制备方法和优化配比等。     

功能薄膜的研究现状与应用前景

阐述了功能材料的分类方法、各类以及功能薄膜的性能特点,指出功能薄膜在解决通讯技术、环境以及能源等诸多领域中的重要作用和地位。总结了国内外对各种功能薄膜的研究状况和最新进展,对在薄膜材料领域被广泛研究又具有应用前景的超导薄膜、磁性薄膜、光电薄膜以及透明导电薄膜功能膜作了重点描述。文章还提出关于发展薄膜产业的一些思考和看法,并特别阐述了一些具体功能薄膜的产业化现状和前景。     

日本氮化铁薄膜的研究

简要综述了１９９４年第１８回归日本应用磁学会学术讲演概要集中有关Ｆｅ－Ｎ薄膜研究论文的内容，包括制备方法，工艺条件对磁性能的影响以及Ｆｅ－Ｎ薄膜的结构等。     

电化学外延生长亚稳态Co薄膜的结构和磁性表征

用循环伏安法在单晶Cu（110）上沉积了亚稳态fcc相的Co磁性薄膜，并用法拉第定律估算了薄膜的厚度约为17nm。X射线衍射结果表明薄膜具有（100）的单一取向结构，而用同样方法沉积在多晶Pt片上的Co薄膜则是六方多晶结构。用扫描电子显微镜、X射线以及同步辐射光电子能谱对薄膜的表面形貌、组成以及元素的化学态进行了表征，结果表明循环伏安法制备的薄膜平整连续，Co薄膜没有明显的氧化现象；磁性测量结果表明外延生长的薄膜具有典型的软磁特征，矫顽力约为100Oe，剩磁比约0．86。软X射线磁性圆二色实验结果计算得到Co薄膜的自旋磁矩和轨道磁矩非常接近于Co体相材料的数据。     

Fe/Pt磁性薄膜的研究进展

Fe/Pt合金薄膜是重要的磁性材料。介绍了Fe／Pt合金的晶体结构以及磁控溅射法、真空电弧离子法、机械冷变形法和化学合成法4种主要制备Fe/Pt合金薄膜的方法，并对影响Fe／Pt合金薄膜磁性能的重要因素进行了评述，包括改变热处理工艺参数和添加掺杂元素。最后指出，Fe/Pt纳米结构材料具有良好的化学稳定性和较高的磁晶各向异性，因而在超高密度信息存储领域有着巨大的应用潜力。     

电镀与环保2008年第6期

电化学沉积铁基软磁合金薄膜研究进展;电沉积镍基/铜基纳米复合镀层的耐腐蚀性能研究;高强钢低氢脆电镀Zn-Ni合金工艺研究;脉冲电沉积Co-W磁性薄膜;PCB电镀中极化曲线的应用。     

倾斜沉积制备雕塑薄膜的研究进展

倾斜沉积是一种新型的薄膜沉积技术.通过制备过程中基片的旋转和倾斜,可以制备出斜柱状、之字形、螺旋状、S形以及C形等各种形状的雕塑薄膜.雕塑薄膜可以实现许多传统薄膜无法实现的光学性质,为光学薄膜的设计与制备开辟了新的途径.本文综述了雕塑薄膜的制备方法,分析了雕塑薄膜的结构特征及影响因素,并阐述了其在光学领域的广泛应用前景.     

铁基多层纳米磁性薄膜的组织与性能

利用溅射技术制备了铁基多层纳米磁性薄膜，通过溅射参数的调整，可以精确地控制薄膜的厚度。然后对薄膜进行退火处理，使薄膜晶化。最后，对薄膜磁性能进行了测量，得到了较好的结果。     

INFLUENCES OF NEODYMIUM ON MAGNETIC CHARACTERISTICS OF ELECTROPLATING CoNdNiMnP FILMS

In order to improve the performances of electroplating permanent magnetic films, ncodymium is introduced into the electroplating CoNiMnP permanent magnetic films. The influences of the neodymium content are also investigated by varying NdCl3 plating bath concentration. The neodymium-doped films are analyzed by energy dispersive spectrum (EDS), vibrating sample magnetometer (VSM) and magnetic force microscope (MFM). The experimental results show that high magnetic performances of CoNdNiMnP permanent magnetic films with vertical anisotropy could be fabricated with current density 5mA/crne at room temperature. With the increasing of neodymium contents, the magnetic properties of films were improved. However when neodymium contents exceeded 3.5wt%, the magnetic properties of films are not improved any more. The increase of film magnetic properties results from the ferromagnetic-coupling between light rare earth element-neodymium and transition metal element-cobalt.     

电弧离子镀TiN薄膜中的缺陷及其形成原因*

分析了电弧离子镀（ALP）TiN薄膜中的主要缺陷-熔滴、孔洞和疏松等。结果表明：这些缺陷存在于晶内、晶界或者贯穿于整个薄膜；缺陷的存在极大地影响了薄膜的性能；缺陷密度与镀膜方法及具体的工艺参数有密切关系；使用磁过滤器镀制薄膜可显著减少上述缺陷，从而提高薄膜的各种性能。认为使用磁过滤器镀制TiN及其各种复合或多层薄膜是一种切实有效的方法，是今后制备高性能TiN及其复合膜的发展方向，另外，缩短脉冲电弧在高值时的时间，用人工来减少薄膜缺陷也是一种行之有效的方法。     

Influence of Oblique Sputtering on Stripe Magnetic Domain Structure and Magnetic Anisotropy of CoFeB Thin FilmsEI北大核心CSCD

Magnetic anisotropy is one of the most important fundamental properties of magnetic thin film. The strength of magnetic anisotropy determines the ferromagnetic resonance frequency of magnetic films in the high-frequency applications. Because of the directionality of conventional static magnetic anisotropy in magnetic film, the high-frequency device usually shows an obvious directionality. When the microwave magnetic fi eld deviates from the perpendicular direction of magnetic anisotropy, the devices cannot reveal their best performance. The magnetic film with a stripe magnetic domain structure displays an in-plane rotatable magnetic anisotropy, which can be an important strategy to solve the problem of magnetic fi eld orientation dependent performance in high-frequency device. Therefore, the magnetic domain, the magnetic anisotropy, and the high-frequency behaviors for magnetic fi lms with a stripe magnetic domain structure have received extensive attention. Previously, most of the studies focused on the stripe magnetic domain structure of polycrystalline thin films. However, less attention was paid on amorphous magnetic thin films. Since the amorphous magnetic films have no long-range ordered crystal structure, no magnetocrystalline anisotropy, no grain boundary defects resistance hindering the domain wall displacement, they usually show excellent soft magnetic properties and have been widely applied in high-frequency devices. CoFeB alloy is one of the most important amorphous magnetic materials and has been extensively applied in various spintronic devices. In this work, amorphous CoFeB magnetic thin films were prepared by using a method of oblique sputtering technique at room temperature. The influences of oblique sputtering on the stripe magnetic domain structure, the in-plane static magnetic anisotropy, the in-plane rotational magnetic anisotropy, and the perpendicular magnetic anisotropy of the amorphous CoFeB films were studied by scanning probe microscope, vibrating sample magnetometer, ferromagnetic resonance. It is found that the method of oblique sputtering could effectively reduce the critical thickness for the appearance of stripe magnetic domain in amorphous CoFeB films. For a non-oblique sputtered CoFeB film, the critical thickness for the appearance of the stripe magnetic domain is above 240 nm. In contrast, after been subjected to the oblique sputtering, the critical thickness becomes below 240 nm. The different magnetic characterizations indicate that for the growth of CoFeB films with stripe magnetic domain structure, the oblique sputtering could not only enhance the strength of in-plane static magnetic anisotropy, but also improve the in-plane rotational magnetic anisotropy and the perpendicular magnetic anisotropy. All of the magnetic anisotropies are increased with the angle of oblique sputtering. The observation results of XRD and TEM prove that the prepared CoFeB thin films tend to amorphous structure. The characterization of SEM observation indicates that although the amorphous CoFeB films do not possess long-range ordered crystalline structure, they still could form a kind of columnar structure. The slanted columnar structure of CoFeB films could significantly increase the perpendicular magnetic anisotropy, thus lead to the appearance of stripe magnetic domain structure.     

Magnetic Property Enhancement of Co0.85W0.15 Magnetic Films by Addition of Vanadium in Ru Buffer Layer

垂直磁记录材料需要高的磁晶各向异性能。尝试了通过改变缓冲层成分来产生晶格畸变以提高磁晶各向异性的方法。300℃下,利用直流磁控溅射设备在RuV缓冲层上沉积了Co0.85W0.15磁性薄膜,其中Ru缓冲层中添加15%V。利用X射线衍射(XRD)分析了薄膜的精细晶体结构,确定了薄膜的结构、取向关系、晶格常数、c轴分散性、fcc/hcp体积分数比和堆垛层错密度。根据实验结果,研究了Co0.85W0.15/Ru0.85V0.85/MgO(111)薄膜的晶体结构和磁晶各向异性能间的关系。实验结果表明,由于缓冲层中V的添加,晶格常数比降低,显著提高了Co0.85W0.15薄膜的磁晶各向异性。因此,可以通过缓冲层的成分设计实现不同磁性材料的磁晶各向异性。     

Structure and magnetic properties of columnar Fe-N thin films deposited by direct current magnetron sputtering

Columnar Fe-N thin films with thickness ranging from 30 to 150 nm were deposited by direct current magnetron sputtering using an Ar/N2 gas mixture (V(N2)/V(N2+Ar)=5%) on corning glass substrates. The structure, surface morphology and magnetic properties were investigated using X-ray diffractometry(XRD), scanning electron microscopy, atomic force microscopy, transmission electron microscopy(TEM) and superconducting quantum interference magnetometry. XRD investigation shows that Fe-N films exhibit amorphous-like structures; however, TEM measurements indicate the synthesis of mixture phases of α-Fe+ζ-Fe2N+ε-Fe3N in these films. The magnetic anisotropy and coercivity of Fe-N thin films exhibit strong dependence on the film growth behavior and surface morphology. With increasing the height of Fe-N films with column structures, the coercivity increases from 7.96 kA/m to 22.28 kA/m in the direction parallel to the film surface. In perpendicular direction the coercivity only increases slightly from 39.79 kA/m to 43.77 kA/m. However, the values of anisotropy field increase from 0.79×106 to 1.44×106 A/m, which is mainly attributed to the shape anisotropy of elongated columns due to the fact that the difference of magneto-crystalline anisotropy among these Fe-N films is small. The saturation magnetizations of Fe-N films vary with increasing film thickness from 23.5 to 85.1 A-m2/kg.     

Direct Electrodeposition of Fe-Ni Alloy Films on Silicon Substrate

在n-型Si片(100)面上直接电沉积Fe-Ni合金薄膜,并对电沉积过程特征及薄膜的结构和性能进行了研究。当阴极电流密度高于1.0 A/dm2时,可获得连续致密的合金薄膜,且电沉积表现为异常共沉积过程。在1.0~4.0 A/dm2范围内改变电流密度可调控合金薄膜的Ni质量分数从45%到78%之间改变,对应的电流效率在60%到66%之间变动。从XRD和TEM结果来看,合金薄膜由尺寸为10~30nm的纳米晶粒组成,且表现为Fe-Ni面心立方固溶体结构。合金薄膜的磁滞回线表现出较高的饱和磁化强度和接近于零的矫顽力,表明该种纳米合金薄膜具有很好的软磁性能。     

制备工艺对超磁致伸缩Fe-Ga合金薄膜表面形貌的影响

采用JZCK-600F型多功能镀膜设备制备了Fe-Ga合金薄膜,研究了溅射工艺对Fe-Ga合金薄膜沉积速率及表面形貌的影响。用SEM、EDS研究了Fe-Ga合金薄膜的表面形貌和薄膜成分。当其他工艺参数不变时,溅射时间、溅射功率是影响Fe-Ga合金薄膜的厚度和生长速率的主要因素。随溅射时间和功率的增加,薄膜厚度和沉积速率也随之增加,并且薄膜厚度与溅射时间和功率呈现出正比例关系;但是薄膜厚度过大,加大的内应力会使薄膜剥离。溅射功率过大时,内应力同样会使薄膜内部出现裂纹。所制备Fe-Ga合金薄膜的磁畴图像明暗对比明显。磁畴形状呈现不太规则的团圈状,类似珊瑚结构。薄膜的结晶化生长良好,薄膜形貌为较均匀致密的颗粒状结构。优化的薄膜溅射工艺参数为溅射功率80 W、溅射工作气压0.6 Pa、溅射时间60 min、Ar气工作流量25 mL/min。采用此优化工艺制备的Fe-Ga合金磁致伸缩薄膜悬臂梁偏移量为69.048 μm,可满足制备微器件所需性能。     

纳米孔软磁薄膜铁芯的制备与分析

软磁敏感膜的磁性能是决定磁传感器性能的关键因素。为了保证加工工艺的兼容性,敏感膜通常采用磁控溅射法制备,其性能普遍较差,这严重制约了磁传感器的发展。因此,如何在硅基底上制备出符合磁传感器性能要求的敏感膜,同时加工过程与MEMS工艺兼容,是一个亟待解决的问题。相关研究表明,微观结构的变化有利于提高敏感膜的磁性能。本文采用标准的MEMS技术制备了纳米多孔软磁敏感膜。对不同孔径的敏感膜进行了相关的表征和测试,分析了孔径大小对薄膜软磁性能的影响。实验表明,孔径大于50nm的多孔结构可以降低敏感膜的Hs和Hc,100nm多孔结构提高敏感膜的软磁性能效果最为明显。实验分析的结论为制备方案的确定和敏感膜性能的改善提供了依据。     

2002-2003年磁性功能材料及应用新进展

本综述论文开始写于1996年，其后每年撰写。本年的综述内容包含：(1)Mn-Zn系铁氧体的新研究；(2)Fe-Al系磁性薄膜；(3)磁性液体的制备和应用；(4)Fe-Si系磁性的改进：(5)微波磁性器件的新进展。     

磁记录技术中的薄膜磁性材料

随着计算机工业、信息、多媒体技术的高速发展，对计算机外存储设备提出了大容量、高数据传输速率及小型化的要求，而实现该要求的唯一途径是提高记录密度。近几年来，由于高矫顽力低噪声介质、薄膜磁阻头、读写及定位技术等方面的重大突破，使记录密度以每年６０％的速率递增。本文就这种数字式磁记录技术中使用的薄膜磁记录介质及新型薄膜磁头材料的发展作一简述。