电流型控制芯片UC3842应用于重频升压电源的研究

新型开关电源控制芯片UC3842基于电流型控制稳压技术原理,外围电路少,使用方便。文中介绍了一种利用UC3842的重频升压电源的设计方法,它克服了以往PWM开关电源开关损耗大、干扰严重的缺点。     

基于UC3842的30W升压电路设计

文章首先对UC3842芯片做了简单的介绍,描述了其在电路中的主要功能。然后对DC－DC直流Boost升压电路的充电过程和放电过程进行了详细介绍。再根据Boost电路基本公式设计了电路中的核心器件——电感,并利用RC振荡电路设定了开关频率以及电路电流和电压等参数。文中设计了电路原理图,并对电路原理图进行了简单介绍。最后给出了电路的测试结果。     

开关稳压电源系统设计

文章构建了基于Boost型变换器的DC/DC变换器,系统以专用芯片UC3842作为控制核心,辅以Atmega128单片机稳定输出电压。利用UC3842自身的电压电流环反馈,加上输出电压均值环设计成输出电压稳定可调的DC/DC变换电路。本系统还采用了模拟PWM技术、在线保护技术、人机交互技术。实际测试表明该系统各项指标均达到或超过设计要求。     

小功率、高功率、高频DC—DC开关电源的研制

本介绍了一种小功率DC－DC高频开关电源的研制过程,电路以UC3842作为电源的控制芯片,主要阐述了该电路的原理、变压器的设计以及实现小体积、高效率的技术要点,并给出了研制样机。     

48V／13V开关稳压电源设计

针对某型电子设备对电源的要求,设计并实现一种以反激式电路为主电路的48 V/13 V开关稳压电源.该电源以UC3842为PWM控制器,电压采样反馈电路采用通过外接电阻和线性光耦,改变了UC3842误差放大器的增益.这种新颖的方法使得输出电压精度很高.详细地给出开关电源变压器及反馈控制电路的设计.实验结果表明,该电源具有精度高,纹波小,体积小,可靠性高等优点.实践证明,该电源不仅完全能达到设计要求,而且具有一定的市场价值.     

反激型开关电源反馈回路的改进

介绍了一种基于PWM控制芯片UC3842的反激式开关电源的反馈控制回路改进设计。该电路采用光耦和电压基准TL431组成反馈网络，具有反馈精度高，动态响应快，实用性强等优点。     

基于CoolSET—F3的反激电源的分析和设计

文章从电路结构、芯片功能等方面对新型电源控制芯片CoolSET与常用芯片UC3842和NCP1207进行了比较,CoolSET—F3系列芯片将PWM发生器、短路保护、前沿消隐等多种功能集成于芯片内部,电路结构更简单,功能更完备。文中采用CoolSET芯片设计并试验了市电输入、六路输出的反激电源。试验结果表明,采用CoolSET芯片提高了变换器的效率,适应于微型开关电源的研究。     

对机电设备开关电源设计的思考

在本文中笔者将对机电设备开关电源设计进行探讨,所探讨电源的主要特点是其能够通过PWM对电压浮动进行调节,此电源中具有相当稳定的电路以及电压,主要是利用UC3842芯片进行开关电源的设计。     

一种基于UC3842的新型开关稳压电源设计

设计了一种以电流型PWM控制器UC3842芯片为核心的高频单端反激式开关稳压电源。利用可控精密稳压源TL431和一种性能优良的电流控制型脉宽调制芯片UC3842实现对电源电压的稳压输出和控制。阐述了开关电源的设计原理、各组成部分的功能及其工作过程。为了满足电源的安全性和电磁兼容性要求,采用低通滤波法抑制传导干扰,采用光耦PC817进行隔离和反馈,并在电源电路中加入了热敏电阻、压敏电阻以及过压、过流保护等保护措施。测试结果表明:该电源具有优良的稳压性、纹波小、负载调整率电压调整率高等优点。     

基于UG3842的双折射测试仪可调直流电压源改进设计

从开关电源的思路出发,对双折射测试仪的可调直流电压电路部分进行了改进。用开关电源PWM控制芯片UC3842设计取代了原来的单管自激式直流变换器,并对差动输出电路进行了重新设计。阐述了电路工作原理,并对改进后的电压源进行了连机调试,结果性能良好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.