蒸镀C_(60)对YG8硬质合金刀片上金刚石形核的影响

YG8硬质合金刀头上蒸镀 C6 0 对金刚石的形核有明显增强效果 ,但对金刚石膜的质量、纯度未见有改善。在相同的工艺条件下 ,蒸镀 C6 0 时 ,金刚石已成膜 ,金刚石膜形貌呈“菜花状”,金刚石颗粒细小 ;未蒸镀 C6 0 时 ,金刚石未成膜 ,基体 WC颗粒明显细化 ,由原始尺寸的约 2 μm细化为 0 .1～ 0 .2 μm。两种金刚石膜中生长晶面以金刚石 ( 1 1 1 )为主 ,金刚石( 4 0 0 )面的生长极不显著。     

氧气和形核密度对金刚石薄膜生长的可控性研究

在2 kW微波等离子体化学气相沉积装置中,以CH4,H2和O2为反应气体制备金刚石膜,主要研究氧气和形核密度对金刚石膜表面形貌和生长速率的影响。在实验过程中,O2的掺入对相同形核密度表面形貌、质量有影响,其中氢气与甲烷在形核时的体积浓度比为200∶6,生长时的体积浓度比为200∶4,通入0.2 mL/min的O2有助于增大表面金刚石颗粒,并提高金刚石膜的质量,在拉曼表征中只有一个金刚石特征峰。采用不同形核密度时,氧气的通入促进金刚石膜的沉积,并能抑制非晶C的沉积,因为沉积过程中的非晶C质量分数急剧下降,从而提高金刚石膜的生长速率,由1μm/h提高到了1.5μm/h。     

蒸镀C60对YG8硬质合金刀片上金刚石形核的影响

ＹＧ８硬质合金刀头上蒸镀Ｃ６０对金刚石的形核有明显增强产效果,但对金刚石膜的质量、纯度未见有改善。在相同的工艺条件下,蒸镀Ｃ６０时,金刚石已成膜,金刚石膜形貌呈“菜花状”,金刚石颗粒细小;未蒸镀Ｃ６０时,金刚石未成膜,基体ＷＣ颗凿明显细化,由原始尺寸的约２μｍ细化为０．１～０．２μｍ。两种金刚石膜中生长晶面以金刚石（１１１）为主,金刚石（４００）面的生长极不显著。     

硬质合金表面化学脱钴对金刚石涂层的影响

以CH3COCH3和H2为反应气源,采用热丝CVD法在经过一步法和碱酸两步法预处理的YG6硬质合金(WC-6％Co)基体上沉积了金刚石涂层.采用扫描电镜、能谱仪、硬度计等对样品进行了分析检测,着重考察了一步法和两步法化学腐蚀脱钴预处理工艺对硬质合金基体表面形貌、钴含量以及其对所得金刚石涂层的形核密度、晶粒尺寸、膜基附着性能等的影响.实验结果表明:无论是一步法还是两步法脱钴预处理工艺,都能去除YG6硬质合金基体表面的钴元素,一步法最佳腐蚀时间为15 min,两步法最佳腐蚀时间为5min,两步法效果强于一步法.在经两步法5min酸蚀脱钴预处理的YG6基体上,获得了膜基粘着性能良好、结晶性能好的微米金刚石涂层.     

基底材料和温度对CVD金刚石沉积的影响

使用热丝CVD装置在钢渗铬层、三氧化二铝、YG8硬质合盒基底上沉积了金刚石膜、结果表明，在700～900℃温度范围内，热稳定性好的基底材料有利于金刚石晶核的形成。硬质合金和三氧化二铝的热稳定性都比钢港铬层好，在700～900℃能获得10^7cm^-2以上的形核密度，而钢渗铬层超过800℃后．形核密度低于10^6cm^-2。     

铜基体表面CVD单晶金刚石微粉的制备

采用基体自形核法,研究了光滑铜基体表面超声研磨预处理对基体表面CVD单晶金刚石微粉沉积的影响。研究结果表明:未经超声研磨预处理的光滑铜基体表面,单晶金刚石微粉形核密度极低;预处理时间不超过1 min时,可以在光滑铜基体表面获得形核密度较高又不会相互连接的单晶金刚石微粉;预处理时间超过2 min时,形核密度过高,金刚石晶粒会相互连接,甚至生长成膜。本实验沉积出的金刚石微粉纯度高,非晶碳含量少,表面光滑,可以观察到（111）和（100）面,具有立方-八面体构型,符合高品级人造金刚石磨料的要求。      

MPCVD多晶金刚石薄膜的生长特性研究

本文用微波等离子化学气相沉积系统（MPCVD）在单晶硅衬底上制备多晶金刚石薄膜,反应气体为CH4和H2。利用扫描电镜（SEM）和Raman光谱研究了CH4流量和反应时间对多晶金刚石薄膜形貌和碳结构的影响。结果表明：随着CH4流量的增加,金刚石的成核密度增加,并出现二次形核,金刚石颗粒从单晶逐渐转变为多晶结构。多晶金刚石薄膜的生长过程为：生长初期在单晶硅衬底上形成非晶碳层,金刚石在非晶碳层上成核长大,并伴随着二次成核,最终形成多晶金刚石膜。     

CVD金属石薄膜及膜——基界面形态

采用直流等离子体射流ＣＶＤ法在硬质合金基体上沉积了多晶金刚石薄膜,借助ＸＲＤ,Ｒａｍａｎ,光谱、ＳＥＭ和ＥＰＭＡ等对金刚石薄膜及膜－基界面的结构、形貌和成分进行了研究,结果表明,结晶度高的刻面型金刚石薄膜质量、纯主较好,膜－基界面处较致密,机械锚固作用明显,结合性能较好,沉积前后基体表面形貌变化很大,存在数十数米厚的脱钴－等离子体刻蚀层,等离子体刻蚀导致脱钴表面更加凹凸不平,为金刚石形核提供了有利     

脱钴预处理对金刚石/硬质合金附着性能的影响

采用不同的两步处理方式浸蚀YG3和YG6低钴硬质合金基体表面，随后在热丝化学气相沉积装置上沉积了金刚石薄膜，分别用扫描电子显微镜、能谱仪以及洛氏硬度计对样品进行了分析检测。结果表明先采用Murakami剂30min腐蚀碳化钨相，再用3H2SO4 7H2O230s混合酸去除钴相，样品金刚石薄膜形核密度高，结晶质量较好，金刚石涂层与硬质合金基体结合良好。同一处理工艺，YG6系列样品处理效果更好。基体钴含量的降低对改善硬质合金与金刚石涂层间的附着性能有利。     

CVD金刚石薄膜及膜-基界面形态

采用直流等离子体财流CVD法在硬质合金基体上沉积了多晶金刚石薄膜,借助XRD、Raman光谱、SEM和EPMA等对金刚石薄膜及膜-基界面的结构、形貌和成分进行了研究.结果表明,结晶度高的刻面型金刚石薄膜质量、纯度较好,膜-基界面处较致密,机械锚固作用明显,结合性能较好沉积前后基体表面形貌变化很大,存在数十微米厚的脱钴-等离子体刻蚀层,等离子体刻蚀导致脱钻表面更加凹凸不平,为金刚石形核提供了有利条件.     

Growth of Free-standing Diamond Films on Graphite Substrates with Ti Interlayers

DIAMOND has many remarkable chemical andphysical properties,such as extreme hardness,highthermal conductivity,high electrical resistively andexcellent optical transparency and so on.For diamond,approximately5.5ev is required to excite an electronfrom the valence band to the conduction band,compared with1.1ev for Si and0.7ev for Ge m.Therefore,Diamond is a wide band gap material.Furthermore,due to the high vibration energy of carbonatoms in diamond,the frequency of infrared absorptionis abn…     

两步浸蚀法预处理对火焰法沉积金刚石膜形貌、结构和性能的影响

两步浸蚀法是有效改善硬质合金基体表面沉积金刚石膜质量的一种预处理方法。本文采用两种不同酸剂的两步浸蚀法分别对YG6硬质合金基体进行了表面预处理,然后在其上火焰法沉积金刚石膜,初步探讨了预处理工艺不同酸剂对金刚石膜形貌、组成和结构的影响。实验结果表明,两步浸蚀法预处理能有效抑制合金基体中粘结相Co促进石墨生长的催化效应,两种火焰沉积产物已连续成膜,主要为超细金刚石、少量石墨。     

Effect of pretreatment, seeding and interlayer on nucleation and growth of HFCVD diamond films on cemented carbide tools

The direct deposition of diamond on carbide tools is difficult because formation of graphitization and thus leading to poor adhesion, due to presence of cobalt on the surface. Various methods were adopted to suppress the effect of cobalt during deposition. One of them was by putting an interlayer. In this study, carbide substrates with coatings of Ti, TiN and TiC were used. Ti coating has a strong tendency to form intermediate carbide leading to the highest nucleation density of diamond. A comparison was made on nucleation and growth of diamond crystals on various interlayers by hot filament CVD method. At the same time, the variations of diamond film growth morphology have been studied on unseeded and seeded carbide inserts. The SEM pictures revealed that among interlayer, Ti coating gave highest nucleation density compared to TiN and TiC coatings. At the same time, diamond seeded inserts, pretreated by Treat 1 [HCl + HNO₃ + H₂O (1:1:1)] for 15 min ultrasonically resulted in the highest nucleation density, compared to Treat 2 [K₃[Fe(CN)₆] + KOH + H₂O] solution in (1:1:10) for 15 min, at constant process parameters.     

采用WC过渡层增加金刚石薄膜附着力的研究

在微波等离子体化学气相沉积装置中，以WC-8％Co为基体，采用氢等离子体脱碳、磁控溅射镀W、碳化等方法，制备了微晶WC过渡层。研究了金刚石薄膜与基体的附着力。结果表明，表面脱碳后再镀W膜，W填充了氢等离子体脱碳时刀具表面因钴蒸发而留下的空洞，形成过渡层，在随后的碳化中和基体WC连接较为紧密，能增加金刚石薄膜与基体附着力，克服单纯的氢等离子体脱碳还原法降低刀具基体硬度、不能完全消除钴的有害影响的缺点。     

Enhancing the adhesion of diamond films on cobalt-cemented tungsten carbide substrate using tungsten particles via MPCVD system

To increase the adhesion of diamond films and avoid the negative effects of using cobalt, previous treatments have employed tungsten particles to cover the surface of the 6 wt.% cobalt-cemented tungsten carbide (WC-Co) substrate. The surface of the tungsten particles is transformed into W₂C and WC, which attracts and traps carbon. Through the process of nucleation, the carbon forms around the tungsten particles, thereby satisfying the conditions necessary for the formation of diamond film. Using Raman spectroscopy, we determined that diamond films of good quality with excellent adhesive properties and a hardness level as high as 27.78 GPa could be produced following pretreatment with 2.0 μm tungsten particles. Rockwell indentation tests indicate that addition of tungsten particles promotes the interfacial adhesion of diamond films with WC-Co substrates. We determined that using smaller tungsten particles decreased the number of gaps and cavities on the surface of the substrate, thereby enhancing the adhesion of the diamond film.     

Preparation of cemented carbide diamond films by gaseous boronizing pretreatment combines with self-assembly seeding process

In order to enhance the adhesion of cemented carbide diamond film and improve the cutting performance of cemented carbide diamond coating tools. This paper was the first to combine gaseous boronizing pretreatment with self-assembly seeding process to prepare diamond films on cemented carbide substrate. It not only eliminated the negative influence of cobalt (Co), but also improved the nucleation density of diamond. The gaseous boronizing pretreatment completed the boronation of the cemented carbide in a short time and obtained the CoWB phase which effectively prevented the diffusion of Co. By application of a self-assembly seeding process with the help of [2-(Methacryloyloxy) ethyl] trimethylammonium chloride (TMAEMC) highly improved the colloidal stability of nanodiamond (ND) particles. When the concentration of TMAEMC was 5 × 10⁻⁶ mol/l, the nucleation density of diamond was the highest. Rockwell indentation shows that the combination of gaseous boronizing pretreatment and TMAEMC self-assembly seeding process significantly improved the film-substrate adhesion. The reciprocating friction test shows that the diamond films prepared by this method had low friction coefficient and excellent wear resistance. Therefore, gaseous boronizing pretreatment combines with self-assembly seeding process is an effective way to achieve strong adhesion and high cutting performance of industrial diamond coating tools.     

等离子体技术在提高硬质合金工具上金刚石薄膜附着力方面的应用

金刚石薄膜具有优异的性能，作为切削工具表面的保护性涂层，可以大幅度提高工具的使用寿命以及加工精度。硬质合金是一种广泛使用的工具材料，在其表面沉积高附着力的金刚石薄膜时存在着困难。等离子体中离子、原子或分子具有高的反应活性，等离子体技术在金刚石薄膜的制备中有着广泛应用。利用等离子体技术可以极大的消除因金刚石薄膜与硬质合金基体之间存在热应力以及由硬质合金中的钴粘结剂在化学气相沉积金刚石薄膜过程中的促石墨化作用而产生的不利影响，提高金刚石薄膜与硬质合金基底之间附着力。本文综述了等离子体技术在提高硬质合金工具表面金刚石薄膜附着力方面的研究进展。     

基于孕镶金刚石颗粒的硬质合金基底的预固晶预处理新方法

为进一步提高孕镶金刚石颗粒的硬质合金基底上金刚石涂层的质量,提出了"预固晶"预处理新方法,即对基底附着钛粉后引晶,并通过微波进行预结合处理.借助SEM电镜、拉曼光谱分析、压痕试验等对比该方法与常规方法所制备的金刚石涂层质量及其结合性能.结果表明:预固晶预处理后,低温下金刚石形核密度较常规预处理的提高约1.5倍,涂层的均...