AVS标准及应用前景分析

AVS是中国制订的新一代数字音视频编解码标准，本文重点探讨AVS视频标准即AVS1-P2的关键技术，解析了AVS标准如何绕开专利问题，并将AVS与MPEG-2及H．264／AVC等标准进行比较，分析了AVS标准的主要优势及对我国的数字电视等音视频产业产生的重大影响，最后展望AVS的应用前景及长虹在AVS方面取得的成果。     

AVS视频标准研究

AVS是中国制订的新一代数字音视频编解码标准，重点探讨AVS视频标准即AVS1-P2的关键技术，并将AVS与H．264／AVC等其他标准进行比较，最后展望AVS的发展前景。     

构建AVS标准符合性测试系统——推动AVS标准产业化

AVS国家标准第2部分视频已经发布实施，其他部分正在制定或即将发布，而标准符合性检测是保证AVS标准顺利实施、促进AVS产业化并规范市场的重要手段。围绕已经发布的AVS视频标准。对AVS符合性测试方法进行了初步的研究并对搭建符合性测试系统所需资源进行了论述。     

AVS五周年产业成果展暨投融资峰会召开

2007年3月18日，在中国自主数字音视频标准AVS诞生五周年之际，由AVS标准工作组等数家单位联合主办的AVSWORLD2007——AVS五周年产业成果展。暨数字音视频产业投融资峰会在香山举行。会议回顾了AVS五年的发展历程，总结了AVS产业链协调发展经验并展示了AVS产业化和应用成果。[第一段]     

AVS产业化加速，6月将推手机解码芯片

2006年AVS在产业化方面迈出了重要的几步，这包括：信息产业部牵头组织了AVS-IPTV试验，并在第一阶段取得初步成果。UT斯达康、中兴、华为等先后实现了AVS编码和IPTV系统的融合开发，初步支持基于AVS编码的端到端的IPTV直播和点播业务。AVS联盟成员单位长虹集团中标四川的16个地县市地面传输标准项目，准备采用AVS标准。坐落在浦东张江高科技园区的首家AVS产业化示范基地项目正式启动。AVS还在积极开拓国际化道路，包括参与ITU—T的IPTV标准制定以及申请加入IS0/IEC MPEG—C。     

创新IPTV不遗余力

2007年通信展上，中国网通展出的AVS—IPTV给了人们新的期待。对于中国网通来说，AVS—IPTV具有双重的意义，中国网通期望它能成为向宽带多媒体业务提供商转型的切入点，并同时也承担起推动AVS—IPTV产业发展的重任。     

AVS音频编解码性能分析

为了对AVS标准音频部分的编解码质量有一个客观评价，2005年8月，AVS标准工作组组织会员单位对AVS音频和LAME MP3进行了内部主观测试，测试结果表明：AVS音频强于LAME MP3；2005年底，AVS音频技术和EVD的ExAC音频技术进行了融合，为了验证融合的效果，又进行了一次主观测试，测试结果表明，融合后的AVS音频编解码质量得到小幅提高。     

AVS+在广电网络的应用

首先介绍AVS+的概念,并说明AVS+与AVS的联系和区别。然后列举了一些目前采用AVS+编码的高清卫星电视节目,并介绍这些高清卫星电视节目在广电网络中传输与接收的几种方法。     

简述AVS视频编码技术及应用展望

本文对AVS视频编码技术标准系统结构和核心技术特点进行综述,把AVS视频标准与MPEG-4 AVC/H.264进行了比较和分析,从而阐述了AVS视频标准的优势和特点,并对AVS视频标准的应用和发展前景进行了讨论。     

AVS-视频技术概述

AVS是中国自主制定的音视频编码技术标准。AVS工作组成立于2002年6月，当年8月开始了第一次的工作会议。经过7次AVS正式工作会议和3次视频组附加会议，经历一年半的时间，审议了182个提案，先后采纳了41项提案，2003年12月19日AVS视频部分终于定稿!     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.