数字电视系统中运动估算的设计与实现

介绍了数字电视中用于运动估算的设计与实现,同时基于相同的线性均值运动差值补偿算法,通过候选块选择的改进以及增大搜索窗口,改进了3DRS算法,并比较了两者的优缺点。该设计利用FPGA平台进行仿真设计,实验证明改进的3DRS算法根据流水线设计,具有更好的矢量一致性,接近真实的运动方向。     

一种全搜索低功耗运动估计IP核的设计

根据全搜索块匹配算法,提出了一种解析度可调的高效低功耗运动估计IP核结构.该结构用于处理8×8宏块并且搜索区域为[-7,7].设计采用了蛇形寄存器组和二维脉动阵列结构,在提高计算速度的同时极大的减少了输入数据带宽.设计采用低功耗设计技术大幅减低了电路的功耗.IP核在FPGA上验证通过,该电路的工作频率在80 MHz的时候就可以满足帧率为25 frame/s和帧尺寸为720×576的视频序列的实时压缩处理要求.     

基于三维递归搜索的多级运动估计视频帧率上转换算法

运动补偿插帧是目前主要的帧率上转换方法。为减小内插帧中的块效应,并降低运算量以满足实时高清视频应用,该文提出了一种基于3维递归搜索(3-D Recursive Search, 3-D RS)的多级块匹配运动估计视频帧率上转换算法。该算法将3-D RS与双向运动估计相结合,首先对序列中相邻帧进行由粗到精的三级运动估计,再利用简化的中值滤波器平滑运动矢量场,最后通过线性插值补偿得到内插帧。实验结果表明,与现有的运动补偿插帧算法相比,该算法内插帧的主、客观质量都有所提高,且算法复杂度低,有很强的实用性。     

一种基于异构系统的H.264/AVC运动估计算法

运动估计是H.264/AVC视频编码标准中计算量最大、耗时最多的模块。为加速编码过程,基于NVIDIA公司提出的统一计算设备架构(CUDA)组成的异构系统,设计了一种并行运动估计算法。该算法采用顺序运动搜索方式,并且使用合成的方式得到宏块在不同划分模式下的绝对帧差和(SAD)值。将运动估计分为3个步骤:小宏块SAD值计算,合成其他形状块SAD值,归约获取最佳结果。各个步骤串行执行,而每个步骤内并行执行大量的线程。实验结果表明,在GTS450硬件平台上,与传统的基于CPU算法相比获得了平均超过50倍的加速比。     

一种改进的三维递归搜索帧率上转换算法

提出了一种改进的三维递归搜索(3-Dimension Recursive Search,3DRS)帧率上转换算法。相较于3DRS算法,在3个方面提出改进:首先,调整候选运动矢量的选择,充分利用运动失量的空间相关性;其次,增加一次逆序运动估计,加速运动失量收敛;最后,提出一种新的匹配准则以进一步提高运动估计的准确性。实验结果表明,该算法有效提高了运动估计的准确性,所得结果在主客观均取得较好的效果。     

基于视频监控系统的运动监测

研究了基于视频监控系统运动监测的三个方面的内容,即运动检测、运动方向判断和图象跟踪。运动检测主要监视是否有活动存在,详细讨论了帧差法,指出了帧差法的缺点,设计了快速实现算法,并提出了对原有方法的改进。运动方向判断实际上就是运动估计,主要讨论了基于平移的块运动估计。图象跟踪带有智能性,可以自动跟踪指定目标。     

基于视频监控系统的运动监测

研究了基于视频监控系统运动监测的三个方面的内容,即运动检测、运动方向判断和图象跟踪.运动检测主要监视是否有活动存在,详细讨论了帧差法,指出了帧差法的缺点,设计了快速实现算法, 并提出了对原有方法的改进.运动方向判断实际上就是运动估计,主要讨论了基于平移的块运动估计.图象跟踪带有智能性,可以自动跟踪指定目标.     

面向多区域视频监控的运动目标检测系统

为了实现视频监控现场多区域运动目标检测,分析了传统运动检测算法的不足,结合帧间差分法和背景差分法,提出背景动态更新的运动检测算法。该算法能自适应背景的变化,减少由背景变化造成的误检测。构建基于FPGA的视频监控系统,在FPGA上用该算法实现了640pixel×480pixel,30帧/s视频信号流的运动目标实时检测。系统提供了分区域运动目标检测的功能。检测区域的大小、位置和个数可通过简单的按键操作进行设定。测试结果表明,系统可以实时地对进入划定区域的运动目标进行检测和闪烁告警,且资源占用较少,适合在小规模的FPGA上进行实现。     

基于FPGA的改进四帧差分的运动目标检测算法

针对运输系统中运动目标在运动垂直方向上边缘信息缺失的问题及运动目标检测实时性差的缺点，提出了一种改进的融合边缘检测算法的四帧差分法，结合现场可编程门阵列(FPGA)芯片的并行工作特性，满足了运动目标检测的实时性要求。改进的四帧差分算法是采用间隔帧间差分的方式，将运动目标区域提取出来与边缘检测相融合，同时利用FPGA中多端口SDRAM图像缓存技术对实时图像进行缓存和输出。系统实现了对运输带上运动目标的检测，结果表明，该算法能够较好地解决在传统帧间差分法中运动目标在运动垂直方向上边缘缺失的问题，同时也能准确且实时地检测出待测运动目标。     

基于AVS高清编码器IME算法设计和实现

在一个典型的视频编码系统中,其中运动估计(ME)的运算量大约占总运算量的60%~90%,尤其未来的数字电视将以高清和超高清标称,意味着在保持一定的信噪比条件下更大的搜索范围。本文提出了一种基于以上算法优势特点的运动估计算法及其硬件实现――分层全搜索运动估计(HFSME),该算法支持AVS标准的多参考帧技术(B,P帧均采用2幅图像作为参考帧)、率失真优化(RDO)和4种宏块分块模式(16×16,16×8,8×16,8×8),并满足AVS高清实时编码器的需求。从性能上该算法及其硬件实现支持AVS Baseline级高清1080P,帧率达到30 fps,搜索面积达到234×98像素,相较于同样性能下的全搜索算法,峰值信噪比(PSNR)相差不大,但运算量只有全搜索算法运算量的1/4。同时,相较于文献[12]中的结构,本文设计的基于HFSME算法的IME(整像素运动估计)结构设计,在处理单元(PE)规模上是文献[12]结构的2倍,但是搜索范围能力是其4倍,并且吞吐率是其10倍,具有最优的性能,带来了良好的性价比。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.