电子商务支付原理分析

引言随着计算机技术、网络技术和通讯技术的发展,出现了一种新兴的商务活动—电子商务。电子商务的出现,使网上支付越来越受到人们的重视。同时,随着计算机技术在金融领域内的应用,银行业务和支付形式也在逐步的演变,基于因特网的网上支付随之应运而生。所以,电子商务支付问题就成为人们非常关注的问题。商务活动商务是商品进行买卖和交易的一种过程,它属于交易活动。进行商务活动可以使用不同的方式,如果在交易过程的完成中,使用电子媒介作为交易的主要形式,则可以称这种交易活动属于电子商务。商务活动是一种社会层面上的经济活动,活动有…     

浅谈计算机技术在电子商务中的应用

随着计算机技术的不断发展,我国电子商务技术异军突起,并成为目前互联网中最受欢迎的应用,电子商务的发展依赖着计算机技术的发展,计算机在电子商务中的应用大大完善了信息技术,并且为电子商务的进一步发展奠定了坚实的基础。本文就电子计算机技术在电子商务中的应用加以介绍,并分析了其内在作用。     

计算机网络安全技术在电子商务中的应用与研究

随着我国社会经济水平和科技水平的不断发展,电子商务在我国得到空前发展,尤其是计算机网络技术在各行各业的应用,极大地促进了电子商务的发展。人们的工作方式和生活方式因为电子商务的出现和发展产生了巨大的改变。但是电子商务的发展主要依赖于计算机技术和电子化信息技术,计算机的安全技术影响着电子商务的发展。电子商务的安全性受到了社会各界的高度关注,如何保障电子商务安全,成为当今人们最为关注的话题。本文就计算机网络安全技术在电子商务中的应用进行了探究,旨在促进我国电子商务的健康稳定发展。     

浅析计算机在电子商务中的应用

在商务领域中,计算机技术的应用逐步得到普及。尤其是对于电子商务来说,计算机技术的发展,使得电子商务的模式不断实现创新。电子商务的主要载体是计算机技术和网络技术,而网络的安全性一直是电子商务领域亟待解决的问题。本文拟将从提升电子商务安全性方面,来探讨计算机技术在电子商务中的应用。     

电子商务实验平台的构建

在当前计算机网络技术发展水平的基础之上,企业对应用计算机进行商务活动提出了新的标准,一方面应考虑到电子商务平台的先进性,另一方面,要使企业现有的商务工作系统能较平滑地嵌入到新的商务平台中。文中在阐述了电子商务的发展,国内外的现状后,分析了电子商务实验平台的可行性,介绍了电子商务实验平台实现的功能,基本框架的构建,采用的技术,该电子商务实验平台的特色。     

电子商务信息安全技术分析

随着我国经济的快速发展,计算机信息技术逐渐发展起来,在计算机Internet中,电子商务呈现出很好的发展前景,越来越多的人们通过电子商务进行商务活动,但是同样因为电子商务的快速发展,电子商务中信息的安全问题得到了人们越来越多的关注。本文通过电子商务的信息存在的安全问题进行描述,详细的分析了电子商务中的各类信息安全技术。     

数据加密技术在计算机网络安全中的应用

随着社会的发展和科学技术的进步,计算机基本全面覆盖了各个领域。然而,由于各种主观和客观因素的影响,计算机网络的使用存在着许多安全风险,这使得计算机数据加密技术得到了广泛应用,并形成了良好的发展趋势。随着计算机技术的进一步发展,网络通信安全也得到了越来越快的发展,但是,各种信息破坏和盗窃方式也对计算机网络安全提出了更高的要求。文章讨论了计算机网络加密技术在当前网络数据库和电子商务等虚拟网络中的应用,并提出了相应的操作方法。     

计算机网络技术在电子商务中的应用

伴随着世界范围内的计算机技术的推广和普及,也推动了电子商务在全球范围内的交流和发展.正是由于这样的机遇,我国的电子商务已经走向了世界,并且在世界上占有着非常重要的地位.本文进一步分析了计算机网络技术在电子商务中的应用,以供同仁参考借鉴.     

计算机技术在电子商务网络消费互动中的作用

随着计算机技术的发展和进步,给予电子商务网络消费互动营造了比较理想的环境。文章积极探析计算机技术在电子商务中的应用,总结和归纳了电子商务的基本功能,在此基础上提出以计算机安全技术去保证电子商务安全性的策略。     

计算机技术在电子商务网络消费互动中的作用

目前,人类已经进入到信息化社会,信息化是现代社会的特征,而信息化的基础在于计算机技术和网络技术的应用。电子商务已经广泛存在于各个层次的商品交易中。文章研究的目的在于探讨计算机技术在电子商务网络消费互动中的应用方式和注意事项,通过总结计算机技术在电子商务中的意义,探讨电子商务的功能,具体来讲,计算机技术可以减少商户成本费用,提高买卖双方的沟通效率并扩大商家广告的宣传宣传范围。计算机技术可以建设并管理电子商务网站,制作并贩卖虚拟物品和虚拟服务,提高买卖双方互动效率。在应用技术的同时,应注意加强对计算机安全技术的重视,加强买卖双方的沟通并注意计算机技术人才的培养方式。通过以上问题的总结和讨论,认为计算机技术在电子商务网络消费互动中有十分重要的作用。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm