一种280mW,78dB SNR,88dB SFDR流水线ADC设计

为满足接收机系统的应用需求,采用标准0.18μm CMOS工艺设计实现了一款16 bit高精度高速pipelined ADC,电源电压1.8 V,采样频率120 MHz。为了降低SHA-less结构带来的非线性问题,引入高线性输入缓冲器。测试结果表明,在不明显增加芯片功耗的同时能够实现较高的性能,有效位数达到13 bit。输入信号57 MHz,幅度-1 dBFS时,SNR、SNDR、SFDR分别达到78 dBFS、78 dBFS、88 dB;输入信号313 MHz、幅度-1 dBFS时,SNR、SNDR、SFDR分别达到70 dBFS、70 dBFS、78 dB。     

基于0.35 μm GeSi-BiCMOS工艺的1 GSPS采样保持电路

介绍了一种基于0.35μmGeSi-BiCMOS工艺的1GSPS采样/保持电路。该电路采用全差分开环结构,使用局部反馈提高开环缓冲放大器的线性度;采用增益、失调数字校正电路补偿高频输入信号衰减和工艺匹配误差造成的失调。在1GS/s采样率、484.375MHz输入信号频率、3.3V电源电压下进行仿真。结果显示,电路的SFDR达到75.6dB,THD为-74.9dB,功耗87mW。将该采样/保持电路用于一个8位1GSPSA/D转换器。流片测试结果表明,在1GSPS采样率,240.123MHz和5.123MHz输入信号下,8位A/D转换器的SNR为41.39dB和43.19dB。     

一种10位40 MHz两步式A/D转换器

提出了一种基于两步转换法(5 6)的高速高精度A/D转换器体系结构,其优点是可以大幅度降低芯片的功耗及面积。采用这种结构,设计了一个10位40 MHz的A/D转换器,并用0.6μm BiCMOS工艺实现。经过电路模拟仿真,在40 MHz转换速率,1 V输入信号(Vp-p),5 V电源电压时,信噪比(SNR)为63.3 dB,积分非线性(INL)和微分非线性(DNL)均小于10位转换器的±0.5 LSB,电源电流为85.4 mA。样品测试结果:SNR为55 dB,INL和DNL小于10位转换器的±1.75 LSB。     

一种基于动态阈值NMOS管的1．2V模拟乘法器

基于CSMC0．6μm DPDM CMOS工艺进行设计,利用4个动态闽值NMOS和2个有源电阻实现了一种1．2V低功耗模拟乘法器电路,既节省了输入晶体管数目,又节省了偏置晶体管和偏置电路．1．2V模拟乘法器的输入信号VinA的频率为5MHz,信号峰峰值为1．0V,输入信号VinB的频率为100MHz,信号峰峰值为0．5V时,输出信号Vout的峰峰值为0．35V,一次谐波和三次谐波的差值为40dB．1．2V模拟乘法器输出信号的频带宽度为375MHz,平均电源电流约为30μA,即动态功耗约为36μw,适合于便携式电子产品和带宽要求不太高（400MHz以下）的场合．     

超低压CMOS混频器比较设计及特性分析

讨论并设计了基于PMOS衬底驱动技术和CMOS准浮栅技术的两种超低压CMOS混频器电路,并对混频器的特性进行了比较分析。在电源电压为O．8V,本征频率和射频频率分别是20MHz、100MHz和1GHz、2,4GHz的输入正弦信号时,衬底驱动混频器的转换增益为-17.95dB和-8．5dB,三阶输入截止点的值为33.2dB和28．4dB;在0．6V的单电源电压下,输入正弦信号分别为频率为20MHz、100MHz和1GHz、2．4GHz时,准浮栅混频器的转换增益为-14．23dB和-21．8dB,三阶输入截止点的值为35．9dB和34．6dB。仿真结果比较显示,衬底驱动混频器具有更高的转换增益,而准浮栅混频器具有更好的频域特性和低压特性。而且它们在频率较低时的性能更好。     

高速ADC兼备低功耗与卓越AC性能

LTC2220系列高速无漏码ADC包括从10MSPS～170MSPS范围的12位和10位分辨率ADC，以及高达80MSPS的14位转换器。LTC2224提供135、105和80MSPS的采样率，功耗为630、475和366mW，在140MHz输入时的SNR为68dB，250MHz输入时的SFDR为77dB，     

低压工作的高速10bit Pipelined ADC

本文提出了一种低压工作的高速1Obit Pipelined ADC。采用自举时钟采样和Cascode频率补偿等方法,该ADC可以在低电压下工作,并达到较高的带宽。该ADC在HJTC 0.18-μm CMOS数模混合工艺下进行了设计仿真和流片测试,结果表明：当供电电压为1．8V,采样频率为62．5MSample／s时,所设计的ADC对于1MHz的输入信号转换有效位数可以达到52．2dB SFDR、44．8dB SNR和44．3dB SNDR。     

用于流水线ADC的高精度SHA-Less电路

本文提出了一种适用于高速、高精度流水线ADC的无采样保持运算放大器(SHA-less)结构。使用可变电阻带宽修调电路以及MDAC与flash ADC的对称性设计,减少了两种单元电路间的采样误差,通过增加MDAC采样电容复位时钟和独立的flash ADC采样电容技术,消除了采样电容残留电荷引起的踢回噪声。本设计作为14位125-MS/s流水线ADC的前端转换级,基于ASMC 0.35- BiCMOS工艺的仿真和测试结果表明,前端转换级芯片面积1.4?2.9 mm2,使用带宽修调后,125 MHz采样,30.8 MHz输入信号下,SNR从63.8 dB提高到70.6 dB,SFDR从72.5 dB提高到81.3 dB,转换器的动态性能在150 MHz的输入信号频率下无明显下降。     

低压工作的高速1Obit Pipelined ADC

本文提出了一种低压工作的高速1Obit Pipelined ADC。采用自举时钟采样和Cascode频率补偿等方法,该ADC可以在低电压下工作,并达到较高的带宽。该ADC在HJTC 0.18-μm CMOS数模混合工艺下进行了设计仿真和流片测试,结果表明：当供电电压为1．8V,采样频率为62．5MSample／s时,所设计的ADC对于1MHz的输入信号转换有效位数可以达到52．2dB SFDR、44．8dB SNR和44．3dB SNDR。     

采用改进型1.5位/级结构的10位100MHz流水线模数转换器

介绍了一个采用改进型1.5位/级结构的10位100MHz流水线结构模数转换器.测试结果表明,模数转换器的信噪失真比最高可以达到57dB,在100MHz输入时钟下,输入信号为57MHz的奈奎斯特频率时,信噪失真比仍然可以达到51dB.模数转换器的差分非线性和积分非线性分别为0.3LSB和1.0LSB.电路采用0.18μm混合信号CMOS工艺实现,芯片面积为0.76mm2.     

一种12位400 MHz电流开关型D/A转换器的设计

基于TSMC 0.25μm工艺、采用电流开关结构,设计了一个3.3 V 12位400 M采样率的D/A转换器。在电路中,设计了一种新的电压限幅结构,从而使其具有较好的动态性能。该D/A转换器在1 MHz输入信号下,无杂散动态范围(SFDR)达到83.75 dB;在12.5 MHz输入信号下,可获得70 dB的SFDR;在不同温度和工艺corner下,仿真得到的电路性能也都能达到上述指标。     

A 14-bit 125 MS/s IF/RF Sampling Pipelined ADC With 100 dB SFDR and 50 fs Jitter

This paper describes a 14-bit, 125 MS/s IF/RF sampling pipelined A/D converter (ADC) that is implemented in a 0.35$muhbox m$BiCMOS process. The ADC has a sample-and-hold circuit that is integrated in the first pipeline stage, which removes the need for a dedicated sample-and-hold amplifier (i.e., “SHA-less”). It also has a sampling buffer that is turned off during the hold clock phases to save power. To accurately estimate and minimize the clock jitter, a new jitter simulation technique was used whose results were verified on silicon. The measured silicon results indicate the highest published IF sampling performance to date and prove the viability of the “SHA-less” architecture for IF/RF sampling ADCs. The ADC is calibration-free and achieves a DNL of less than 0.2 LSB and INL of 0.8 LSB. The SNR is 75 dB below Nyquist, and stays above 71 dB up to 500 MHz. The low-frequency SFDR is about 100 dB, and stays above 90 dB up to about 300 MHz. This is also the first ADC to achieve 14-bit level performance for input signal frequencies up to 500 MHz and to have a total RMS jitter of only 50 fs.     

10 bit 200 MSPS GaAs BiFET sample and hold circuit

A GaAs BiFET sample and hold circuit has been implemented and evaluated. SINAD (signal to noise and distortion) was measured to be ~60 dB, but was limited by the test setup. The device accepts a differential input and produces a differential output. The S/H is clocked differentially at rates of up to 200 MHz. 12 bit performance was expected from SPICE simulations. Despite our test setup limitations, 10 bit performance was observed at 200 MSPS with an input signal frequency of 198 MHz     

A single-chip 12.7 Mchips/s digital IF BPSK direct sequencespread-spectrum transceiver in 1.2 μm CMOS

This paper describes a fully integrated digital-spread spectrum transceiver chip fabricated through MOSIS in 1.2 μm CMOS. It includes a baseband spread spectrum transmitter and a coherent intermediate frequency (IF) receiver consisting of a Costas loop, an acquisition loop for the pseudo-noise (PN) sequence, and a clock recovery loop with a 406.4 MHz onchip numerically controlled oscillator (NCO). The transceiver is capable of operating at a maximum IF sampling rate of 50.8 MS/s and a maximum chip rate of 12.7 R Mchips/s (Mcps) with selectable data rates of 100, 200, 400, and 800 kbps. At the maximum operating speed of 50.8 R MS/s, it dissipates 1.1 W. In an additive white Gaussian noise channel the IF receiver achieves a receiver output SNR within 1 dB of theory and can acquire code with a wide range of input SNR from -17 dB to over 30 dB. The transceiver chip has been interfaced to an RF up/down converter to demonstrate a wireless voice/data/video link operating in the 902-928 MHz band     

A monolithic video A/D converter

The design and measured performance of a fully parallel monolithic 8-bit A/D converter is reported. The required comparators and combining logic were designed and fabricated with a standard high-performance triple-diffused technology. A bipolar comparator circuit giving good performance with high input impedance is described. Circuit operation is reported at sample rates up to 30 megasamples per second (MS/s), with analog input signal power at frequencies up to 6 MHz. Full 8-bit linearity was achieved. An SNR of 42-44 dB was observed at input signal frequencies up to 5.3 MHz.     

40 MHz IF 1 MHz Bandwidth Two-Path Bandpass ΣΔ Modulator With 72 dB DR Consuming 16 mW

A bandpass modulator with two time-interleaved second-order modulators and cross-coupled paths is described. Split zeros around the 40 MHz IF provide a signal band of 1 MHz with 72 DR and 65.1 dB peak SNR. The circuit, integrated in a 0.18 CMOS technology, uses a 60 MHz clock per channel. Experimental results show that the in-band region is not affected by tones caused by mismatches and that a two-tones input causes an IMD signal of 68 . The power consumption is 16 mW with 1.8 V supply.     

A High-Frequency Transconductor Using a Robust Nonlinearity Cancellation

This brief deals with the design of a linear operational transconductance amplifier (OTA) intended for high-frequency continuous-time filters. Three source-degenerated differential pairs are used to reduce the third-order distortion components regardless of process parameter tolerances and bias current. Experimental results for an OTA fabricated in the TSMC 0.35-$muhboxm$CMOS process are presented and compared with recently reported topologies. Draining 2.8 mA from a single supply voltage of 3.3 V, the transconductor achieves$hboxIM3≪-70~hboxdB$for a two-tone input signal of 1.3 Vpp measured at 70 MHz. The input referred noise density is only 7$~hboxnV/surdhboxHz$, leading to an SNR of 75 dB.     

A power-efficient 10-bit 40-MS/s sub-sampling pipelined CMOS analog-to-digital converter

This paper presents a 10-bit 40-MS/s pipelined analog-to-digital converter (ADC) in a 0.13-μm CMOS process for subsampling applications. A simplified opamp-sharing scheme between two successive pipelined stages is proposed to reduce the power consumption. For subsampling, a cost-effective fast input-tracking switch with high linearity is introduced to sample the input signal up to 75 MHz. A two-stage amplifier with hybrid frequency compensation is developed to achieve both high bandwidth and large swing with low power dissipation. The measured result shows that the ADC achieves over 77 dB spurious free dynamic range (SFDR) and 57.3 dB signal-to-noise-plus-distortion ratio (SNDR) within the first Nyquist zone and maintains over 70 dB SFDR and 55.3 dB SNDR for input signal up to 75 MHz. The peak differential nonlinearity (DNL) and integral nonlinearity (INL) are ±0.2 LSB and ±0.3 LSB, respectively. The ADC consumes 15.6 mW at the sampling rate of 40 MHz from a 1.2-V supply voltage, and achieves a figure-of-merit (FOM) value of 0.22 pJ per conversion step.     

红外探测系统三重相关峰值检测技术研究

将三重相关峰值检测技术用于对红外探测系统亚像元或点目标图像的信号处理。研究表明，该技术在峰值信噪比为０．８、功率信噪比为－９．７３ｄＢ时可获得的信噪比改善约为２３ｄＢ。提出了一种可供实用的三重相关的二维图形表示法，该方法在峰值信噪比低至０．４８、功率信噪比低至－１４．２ｄＢ时仍可以从噪声中有效地提取点目标信号的幅度信息。