摆镜式激光通信终端光束指向与粗跟踪特性

基于两正交旋转轴的单平面镜（摆镜式）激光通信终端的粗跟踪问题,提出了一种求解光束指向的法矢量求解算法,给出了该类型通信终端的粗跟踪算法。采用矢量反射定律和矩阵旋转变换规律,理论推导了摆镜的光束指向模型和跟踪模型,对比分析了不同安装方式对光束指向和畸变的影响,并对模型分别进行了建模仿真和实验研究。结果表明:光束传输模型和粗跟踪模型的精度优于3 μrad,所研制的摆镜式激光终端粗跟踪精度,最大误差优于15.5 μrad (3σ),均方根误差优于10.5 μrad,满足激光通信终端对高精度粗跟踪的技术要求。该研究工作对摆镜式扫描系统的光束指向分析和激光终端粗跟踪具有借鉴意义。     

船-岸无线激光通信实验

针对船载平台的特性设计了激光光束跟踪控制策略,并根据船-岸激光通信的特点,设计了155Mbit/s岸上通信终端和船载通信终端完成船-岸激光通信跟踪实验。其中船载终端x轴跟踪残差为3.5μrad(σ),y轴为6.7μrad(σ);平均接收光功率为-29.76dbm,标准差0.35dbm。岸上终端x轴跟踪残差为1.7μrad(σ),y轴为3.9μrad(σ);平均接收光功率为-28.18dbm,标准差0.26dbm。实验验证了该跟踪控制策略适用于船载激光通信。     

空间激光通信单探测器复合跟踪控制技术研究

空间激光通信终端伺服系统是一种高精度的跟踪机构,在扰动条件下,通信系统对跟踪系统的稳定性及精度提出了较高的要求。本文主要介绍了激光通信伺服系统的复合跟踪技术,详细论述了单探测器复合跟踪方式的选择以及激光通信伺服系统的控制流程。最后,在振动平台上进行了粗精复合的激光跟踪实验。实验结果显示,当通信终端系统跟踪最大振动加速度为0.22°/s2的振动平台时,跟踪目标平稳性较好,单独采用粗跟踪时误差为60 μrad,采用粗精复合跟踪时位置误差可以达到2 μrad。实验结果表明,空间激光通信系统中单探测器复合跟踪技术的设计满足了系统跟踪精度的要求,为激光通信控制系统的设计提供了一定的参考。     

基于迭代学习控制的潜望式激光通信终端系统的动态跟踪设计

为提高潜望式激光通信终端伺服系统的动态跟踪性能,针对基于永磁同步电机的二维伺服转台的控制系统进行了设计。通过采取空间矢量控制方法实现电机的解耦控制,建立控制模型并完成了各控制回路的设计。针对动目标跟踪设计了迭代学习控制方法以提高通信终端的动态跟踪性能,并对控制系统的速度阶跃响应进行测试,分析通信终端系统的低速平稳性。最后,搭建了4.62 km激光通信的动态跟踪实验,利用六自由度转台模拟平台抖动,为动态跟踪验证实验创造外部平台扰动条件。实验结果表明:通信终端系统速度阶跃响应的稳态误差为±0.02 (°)/s,表明伺服系统速度回路具有较快的动态响应特性和较高的稳态精度,在最大加速度为0.219 (°)/s2的正弦波扰动条件,二维伺服转台的动态粗跟踪精度可以达到62 μrad,粗精复合跟踪精度优于2 μrad,验证了通信终端伺服系统的有效性及其动态跟踪性能,为进一步提高终端系统的跟踪精度奠定基础。     

基于二维振镜与位置灵敏探测器的高精度激光跟踪系统

提出了一种基于二维振镜与位置灵敏探测器的高精度激光跟踪系统;基于光线追迹方法建立跟踪系统的几何光学模型,并对跟踪系统进行误差分析,通过仿真对激光跟踪系统的指向精度以及跟踪性能进行分析。仿真结果表明:在跟踪距离100 m处,跟踪系统的位置指向精度可达0.35 mm,角度指向精度为0.72″,跟踪范围为-10°～10°,最大跟踪速度可达3.6 rad/s,能够实现对远距离快速运动目标的高精度实时主动跟踪。     

使用自适应阈值的图像篡改检测与定位算法

为了实现对机载移动目标的快速捕获和粗跟踪瞄准,设计了粗跟踪演示系统,完成了外 场飞行实验的 初步验证。本文系统利用GPS数据完成对目标的捕获,通过对姿态数据的校正,方位误差降 到0.60°(1σ),俯 仰误差降到0.40°(1σ),有效缩小了不确定区域;系统还对跟踪算 法进行了优化改进,利用分段式函数等效 非线性调整函数,有效解决动态目标跟踪时快速调整和超调之间的矛盾。飞行实验表明, 本文的粗跟踪演示 系统的捕获时间优于10s,粗跟踪精度优于480μrad,为精跟踪子系统实现最终的目标精确跟踪瞄准提供了 有利条件,实验结果验证了该系统用于激光通信链路快速建立的可行性。     

空间激光通信中复合跟踪技术研究

空间激光通信前提是信标光束的精确对准,因此复合轴的跟踪技术是关键,粗精复合的耦合性问题成为研究重点。设计了一套基于单探测器复合轴的跟踪系统,对其原理及关键技术进行阐述,采用粗跟踪配合补偿精跟踪偏转量的方法,解决了耦合性问题,并完成伺服控制系统设计。搭建实验系统对跟踪性能及指标进行验证,实验结果表明,在±0.25°@0.1Hz扰动下系统跟踪误差控制在1个像素之内,跟踪误差均方根为0.13,结合实际条件知,系统像元角分辨率22μrad,故系统整体跟踪精度优于3μrad,可实现对信标光的精确跟踪,满足空间激光通信的应用需求。     

激光通信系统中快速反射镜控制技术研究

为满足激光通信系统跟踪精度的要求,采用快速反射镜系统作为精跟踪控制核心.选用大行程、高分辨率、高带宽的音圈电机驱动快速反射镜,对音圈电机控制方法进行了研究.首先,定性分析了快速反射镜系统的组成及工作原理.然后,根据音圈电机的等效电路模型进行建模分析,得到快速反射镜的传递函数模型.最后,介绍了模拟控制器的设计原理,给出了比例-积分-微分(Proportional-Integral-Derivati ve,PID)电路、位置检测电路以及功率放大电路的具体设计.实验结果表明,设计的快速反射镜的角分辨率为1 μrad,重复定位精度为3 μrad,闭环带宽(-3 dB)为300 Hz@1 mrad,满足激光通信系统稳定可靠、精度高、抗干扰能力强等要求.     

空间激光通信捕获、对准、跟踪系统动态演示实验

捕获、对准、跟踪(APT)系统是空间激光通信重要组成部分,是通信正常进行的前提与保障。对APT系统组成原理、工作原理、关键技术、系统设计、工程实现等内容进行了详细的研究,在此基础上开展室内模拟实验及野外演示验证实验。室内模拟实验跟踪精度达到2~3μrad,表明本系统可应用在星间激光通信中。野外双端动态演示实验在飞艇-船舶间进行,结果表明系统捕获概率优于95%,捕获时间小于60s,系统跟踪精度由于受到大气湍流影响而降低,多次实验测试表明在湍流中跟踪精度达到5~25μrad。APT系统的成功研制为空间激光通信顺利进行奠定了基础。     

改进的内模控制在机载激光通信系统的应用

为了减少机载激光通信光电跟踪稳定平台的脱靶量误差，提出一种基于观测器的二自由度内模控制方法。以经过电流环化简后的速度环为被控对象，采用二自由度内模控制对系统进行校正，将干扰观测器的控制律引入到二自由度内模控制中以降低模型误差和外部扰动对系统性能的影响。通过仿真和实验验证了所提方法的高性能。实验结果显示，改进的内模控制在抗干扰能力、鲁棒性和跟踪性能上都优于传统内模控制；将改进的内模控制算法用于实际系统中也有较好的跟踪性能，其跟踪精度约为143μrad，与传统内模控制相比提高了约24%。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.