适用于IEEE 802.11n的高速低功耗Viterbi译码器的设计

针对IEEE 802.11n SOC对信道编码的多码率、高吞吐率的要求,设计了适用于IEEE 802.11n卷积码的Viterbi译码器,具有高吞吐率,低功耗特点,可支持1/2,2/3,3/4,5/6码率.译码器采用全并行的加比选(ACS)单元,最高位清零防溢出处理,采用了一种可降低功耗的寄存器交换法,可有效减少寄存器翻转动态功耗.采用SMIC0.13tan CMOS工艺设计并实现了该译码器,时钟频率为240MHz时,最大数据吞吐率为480Mb/s,功耗为25mW.     

一种串行Viterbi译码器的FPGA设计与实现

介绍了基于超宽带(UWB)通信系统的(2,1,6)卷积码和Viterbi译码基本原理,设计了串行Viterbi译码器以及各个子模块实现电路,采用Altera公司的Apex20ke系列FPGA来综合实现,完成了Viterbi译码器硬件设计.该设计使用串行结构,回溯算法,占用LEs仅2195个,与并行译码相比节省了约50%的硬件资源.     

可重构幸存路径管理Viterbi译码器的研究与设计

根据现代通信系统对自适应性和低功耗的要求,设计了一种自适应的Viterbi译码器,通过设计可重构的幸存路径存储管理单元(SMU),译码器可以根据不同调制方式自适应地选择回溯深度,并通过简化分支度量运算,降低了Viterbi算法中分支度量单元(BMU)和加-比-选单元(ACSU)的复杂度.经FPGA仿真结果表明,该算法性能满足自适应要求,且占用硬件资源低,可降低功耗14%左右,可用于含多速率多调制方式的移动通信系统.     

一种高速Viterbi译码器的设计与实现

Viterbi算法是卷积码的最优译码算法.设计并实现了一种高速(3,1,7)Viterbi译码器,该译码器由分支度量单元(BMU)、加比选单元(ACSU)、幸存路径存储单元(SMU)、控制单元(CU)组成.在StratixⅡ FPGA上实现、验证了该Viterbi译码器.验证结果表明,该译码器数据吞吐率达到231Mbit/s,在加性高斯白噪声(AWGN)信道下的误码率十分接近理论仿真值.与同类型Viterbi译码器比较,该译码器具有高速、硬件实现代价低的特点.     

一种串行Viterbi译码器的FPGA设计与实现

介绍了基于超宽带（UWB）通信系统的（2，1，6）卷积码和Viterbi译码基本原理，设计了串行Viterbi译码器及各个子模块实现电路，采用Altera公司的Apex20ke系列FPGA来综合实现。完成了Viterbi译码器硬件设计。该设计使用串行结构，回溯算法，占用LEs仅2195个，与并行译码相比节省了约50％的硬件资源。     

Viterbi译码器的FPGA实现

详细分析了(2,1,6)Viterbi译码器的实现结构,提出了基于模块化并行算法构建Viterbi译码器,并利用Verilog在XilinxISE6.2中进行了建模仿真和综合,实验结果表明采用该结构体系,不仅降低了Viterbi译码器实现的复杂度,而且较好地均衡了面积和速度相互制约的矛盾。     

高速Viterbi译码器的FPGA实现

提出了一种高速Viterbi译码器的FPGA实现方案。该译码器采用全并行结构的加比选模块和寄存器交换法以提高速度，并且利用大数判决准则和对译码器各个部分的优化设计，减少了硬件消耗。译码器的最高输出数据速率可以达到90Mbps。译码器的性能仿真和FDGA实现验证了该方案的可行性。     

FPGA上分布式Viterbi译码器实现技术

分布式Viterbi译码器是一种物理分散、逻辑统一的译码器。它在多个现场可编程阵列（FPGA）上实现多功能模块,以充分利用各FPGA的容裕量,达到系统资源分配的平衡。通过一个大规模设计中分布式Viterbi译码器实例的剖析,说明分布式结构设计的特点及实现技术。这里给出的Viterbi译码器实例对其他分布式FPGA器件的设计也有较高的参考价值。     

基于IP核的Viterbi译码器实现

Viterbi译码器在通信系统中应用非常普遍,针对采用DSP只能进行相对较低速率的Viterbi译码的问题,人们开始采用FPGA实现高速率Viterbi译码。本文首先简单描述了Viterbi译码的基本过程,接着根据Viterbi译码器IP核的特点,分别详细介绍了并行结构、混合结构和基于混合结构的增信删余3种Viterbi译码器IP核的主要性能和使用方法,并通过应用实例给出了译码器IP核的性能仿真。     

一种高性能可重用Viterbi译码器的设计

设计了一个可重用、可升级的基四流水线结构Viterbi译码器.设计中采用了基四流水、前向追踪、同址写回和分块管理技术,并利用处理单元(PE: Process Element)互联技术,对译码器的结构进行了抽象和参数化处理,使卷积码生成多项式、PE个数和回溯深度等可根据实际需要重新配置.在TSMC 0.18 μm CMOS 工艺下, 成功地实现了带删除的64状态(4,1,6) Viterbi 译码器,电路规模仅3万门,译码速率可达12.5 Mbps,功耗为15 mW;在ST 0.13 μm CMOS工艺下,也获得了同样的性能,功耗仅为4.7 mW.该Viterbi译码器已被应用于DAB接收机芯片中.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.