基于ADS1293的便携式低功耗心电信号采集系统

为实现对人体心电信号的实时采集,设计了一种基于ADS1293的心电信号采集系统,系统主要由ADS1293 信号采集前端和MSP430单片机控制电路组成。ADS1293对心电信号进行24位的高精度模/数转换,由SPI接口方式发送给MSP430进行分析处理,最终通过MSP430的USB接口发送到便携式显示设备实时显示波形。该系统为便携式、低功耗的心电信号采集系统提供了技术支持,具有广泛的应用前景。     

基于MSP430单片机的超低功耗温度采集系统设计

针对工业生产过程中常需对温度进行实时监控的需求,本文介绍了一种便携式超低功耗的温度采集与实时显示的温度采集系统。为了使温度采集系统功耗达到最低,本设计选用了TI公司的超低功耗MSP430FG4618单片机作为主控芯片,并对整个系统进行了有效的电源管理,最后采用FYD12864C-1液晶显示器将采集到的温度实时显示出来。...     

基于MSP430嵌入式温度采集器的实现方案

本文介绍了一种基于MSP430的嵌入式温度采集器实现方案。本采集器利用MSP430F133内置的ADC,实现DTMF信号的实时解码,利用DS18B20这个1-WIRE系统传感器采集温度,实现了温度采集和数据传输。     

温度自动控制系统设计

基于MSP430系统平台,利用PID控制算法搭建了一个温度自动控制系统。系统包括温度采集、PID算法功率控制、人机交互等模块。系统采用数字式温度传感器精确测量温度值,430单片机用来实现PID算法及温度设定与显示等;双向可控硅光电耦合器用于调节功率。能实时监测温度值,测量温度范围广、分辨率高,调节温度迅速,控制温度实时精准、波动小,温度值显示准确稳定。     

基于MSP430与uPD720200的高速温度采集系统的设计

文章研究与设计了一套基于MSP430和u PD720200的USB3.0高速温度采集系统。此系统采用ADS7886为A/D转换芯片,高速MSP430单片机为主控CPU,u PD720200为USB3.0主机接口芯片,能实现高速实时温度数据采集。     

基于MSP430单片机的多路无线温度检测系统

设计了基于MSP430的多点无线温度检测系统。系统采用低功耗的MSP430F149单片机作为核心控制部件,硬件由无线通信模块、温度采集电路、显示模块和串口通信模块组成,软件采用模块化的设计方法。测试表明,整个系统都是在超低功耗的要求下进行元件及运行方式的选择,各个基站只需要3V电池供电就能实现长时间运作,能很好地实现超低功耗,并且实现了测量温度的实时性。     

TMP275在手持式实时测温仪中的应用

设计一种基于TMP275的手持实时测温仪,采用TI公司的低功耗单片机MSP430F149作为主控芯片,该系统采用I^2C总线协议数字温度传感器TMP275对现场温度进行采集,通过低功耗液晶模块进行实时温度显示,该系统具有采集数据准确、抗干扰能力强、功耗低的特点,非常适合于对现场环境温度进行测量与采集。     

基于MSP430单片机的数据采集系统

介绍了一种用TI公司新一代16位单片机MSP430系列的MSP430F169设计的实时数据采集系统。MSP430系列是TI公司推出的超低功耗混合信号微控制器,这些微控制器可用电池供电并长期工作。利用单片机内部自带的12位AD和DMA进行数据的采集和传输,并通过液晶显示模块将采集的数据以波形方式直观地显示。该系统具有硬件电路简单、采集精度较高、界面友好等优点。     

基于MSP430的温湿度监控系统分析

基于实时监测环境温湿度的需求,本文提出了基于MSP430单片机的温湿度监测系统的设计方案,系统以MSP430单片机为核心,采用温湿度传感器SHT11芯片,对温湿度监测系统的软硬件进行设计。该系统具有温湿度采集和实时显示及超过设置上、下限温湿度自动报警等功能。实验结果表明,该系统具有成本低、环境采集误差小,可提高作业效率等优点,具有广阔的应用前景。     

基于MSP430F149单片机的低功耗电子血压计设计

介绍一种基于MSP430系列单片机的低功耗电子血压计。该系统以MSP430F149单片机为核心,由数据采集模块、气路控制模块、电源模块、存储模块和显示模块等模块电路组成。通过US9116-006-N压力传感器实时采集压力信号,由MSP430F149对采集到的信号进行A/D转换和分析处理得到血压值,同时将结果进行显示和存储。该系统具有低功耗和携带方便等优点。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its